• Journal of Korean Port Research
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• v.12 no.2
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• pp.251-260
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• 1998

For the purpose of building the simulation model on cargo handling capacity in container terminal we composed a model of container logistics system which has a 4 subsystem; cargo handling transportation storage and gate complex system. Several data are used in simulation which were gained through a field study and a basic statistic analysis of raw data on BCTOC from January to Jane in 1998. The results of this study are as follows; First average available ratios of each subsystems were 50% for G/C, 57.5% for Y/T, 56% for storage system and 50% for gate complex. And there were no subsystems occurring specific bottleneck. Second comparing the results of simulation to the results of basic statistics analysis we can verifying the suitability of this simulation model. Third comparing the results of this study to the results of existed similar study in 1996, we were able to confirm the changes of container logistics system in BCTOC.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.230-238
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• 2017

We have proposed an InGaAs-based gate-all-around (GAA) tunneling field-effect transistor (TFET) with a stacked dual-metal gate (DMG). The electrical performances of the proposed TFET are evaluated through technology computer-aided design (TCAD) simulations. The simulation results show that the proposed TFET demonstrates improved DC performances including high on-state current ($I_{on}$) and steep subthreshold swing (S), in comparison with a single-metal gate (SMG) TFET with higher gate metal workfunction, as it has a thinner source-channel tunneling barrier width by low workfunction of source-side channel gate. The effects of the gate workfunction on $I_{on}$, the off-state current ($I_{off}$), and S in the DMG-TFETs are examined. The DMG-TFETs with PNPN structure demonstrate outstanding DC performances and RF characteristics with a higher n-type doping concentration in the $In_{0.8}Ga_{0.2}As$ source-side channel region.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.48 no.10
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• pp.1317-1326
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• 1999

As the integration ratio and operation speed increase, it has become an important problem to estimate the dissipated power during the design procedure as a method to reduce the TTM(time to market). This paper proposed a prediction model to estimate the maximum dissipated power of a CMOS logic gate. This model uses a calculational method. It was formed by including the characteristics of MOSFETs of which a CMOS gate consists, the operational characteristics of the gate, and the characteristics of the input signals. As the modeling process, a maximum power estimation model for CMOS inverter was formed first, and then a conversion model to convert a multiple input CMOS gate into a corresponding CMOS inverter was proposed. Finally, the power model for inverter was applied to the converted result so that the model could be applied to a general CMOS gate. For experiment, several CMOS gates were designed in layout level by $0.6{\mu}m$ layout design rule. The result by comparing the calculated results with those from HSPICE simulations for the gates showed that the gate conversion model has within 5% of the relative error rate to the SPICE and the maximum power estimation model has within 10% of the relative error rate. Thus, the proposed models have sufficient accuracies. Also in calculation time, the proposed models was more than 30 times faster than SPICE simulation. Consequently, it can be said that the proposed model could be used efficiently to estimate the maximum dissipated power of a CMOS logic gate during the design procedure.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.6
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• pp.83-88
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• 2003

This paper analyses a fault operation due to the effect of miller capacitance, which severely influences the performance of the IPMs based on computer-aided simulations, and also it presents a good solution to solve that problem. A miller capacitance existed between gate and collect is very closely related to the stray capacitance formed between gate and emitter, and the value of gate resistor. These relationships are proved by the computer-aided simulation. Based on the PSpice simulation results, a customized IPM employing an auxiliary circuit is presented to minimize a fault operation. And it is compared to the standard IPM by the experimental waveform. As a result, it is verified that a customized IPM has a voltage margin to prevent a fault operation approx. 3 [V].

• Journal of the Korean Society for Precision Engineering
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• v.31 no.1
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• pp.9-13
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• 2014

The molding process can be divided into five separate steps: plastification, injection, holding, cooling, and finally ejection. In the plastic injection molding, the effect factor such as mold temperature, injection speed, packing pressure and inhomogeneous cooling under packing process affects both the article dimension and physical characteristics. Especially, the packing pressure is the most critical factor to affect molded articles quality among the packing parameters. In this paper, the CAE simulation considering the molding condition is performed to predict the faulty cause which appears in the packing process between cavities of injection molding machine. From the results of CAE simulation, the packing phenomena according to the product form and the gate position was investigated to improve the article quality and minimize the various molding defects. The effect of packing pressure and gate number on the injection molding was discussed.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.751-754
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• 2003

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.511-515
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• 2013

A Monte Carlo (MC) simulation study has been done in order to investigate the effects of line-edge-roughness (LER) induced by either 1P1E (single-patterning and single-etching) or 2P2E (double-patterning and double-etching) on fully-depleted silicon-on-insulator (FDSOI) tri-gate metal-oxide-semiconductor field-effect transistors (MOSFETs). Three parameters for characterizing the LER profile [i.e., root-mean square deviation (${\sigma}$), correlation length (${\zeta}$), and fractal dimension (D)] are extracted from the image-processed scanning electron microscopy (SEM) image for each photolithography method. It is experimentally verified that two parameters (i.e., ${\sigma}$ and D) are almost the same in each case, but the correlation length in the 2P2E case is longer than that in the 1P1E case. The 2P2E-LER-induced $V_TH$ variation in FDSOI tri-gate MOSFETs is smaller than the 1P1E-LER-induced $V_TH$ variation. The total random variation in $V_TH$, however, is very dependent on the other major random variation sources, such as random dopant fluctuation (RDF) and work-function variation (WFV).

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.6
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• pp.73-81
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• 2014

In this paper, multiple gate locations and process conditions under concern are automatically optimized by considering robustness to minimize the injection pressure required to mold an automotive dashboard. Computer simulation-based experiments using orthogonal arrays(OA) and a design-range reduction algorithm are consolidated into an iterative search scheme, which is then used as a tool for the optimization process. The robustness of a design is evaluated using an OA-based simulation of process fluctuations due to noise as well as the signal-to-noise ratio. The optimal design solution for the automotive dashboard shows that the robustness of the injection pressure is significantly improved when compared to the initial design. As a result, both the die clamping force and the pressure distribution in the part cavity are also much improved in terms of their robustness.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.11
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• pp.1227-1232
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• 2014

This paper relates 10% shrink from $0.13{\mu}m$ design for core devices as well as input and output (I/O) devices different from previous poly length shrink size only. We analyzed body effect with different channel length and doping profile simulation. After fixing the gate oxide module process, LDD implant conditions were optimized such as decoupled plasma nitridation of gate oxide, TEOS oxide $100{\AA}$ before LDD implant and 22o tilt-angle(45o twist-angle) LDD implant respectively to match the spice DC parameters of pre-shrink and finally matched them within 5%.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.3
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• pp.1006-1015
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• 2010

We studied sea water pollution by opening the water gate of Bunam Lake in Seosan City. SS and COD were simulated. If we control the flow rate to 100ton/s, and the gate opening time to 3 hours, SS of 50ppm can be clear with in 19hours. Also, COD of 8ppm can flow for 1 hour without damaging total sea water(COD less than 2ppm). Thus, If we control the flow rate and flow time, the fish cultivation will be free from danger of water pollution.