Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2003.07b
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- Pages.751-754
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- 2003
A Study on the Calibration of GaAs-based 0.1-$\mu\textrm{m}$ $\Gamma$ -gate MHEMT DC/RF Characteristics for the Development and Fabrication of over-100-GHz Millimeter-wave HEMT devices
100GHz 이상의 밀리미터파 HEMT 소 제작 및 개발을 위한 GaAs기반 0.1$\mu\textrm{m}$ $\Gamma$ -게이트MHEMT의 DC/RF 특성에 대한 calibration 연구
Abstract
Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I
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