• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.684-686
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• 2003

Until recently, the 2-D FEA neglects the magnetic field fringing and end-leakage, it leads to the approach of a trial and error experimental design. Since 3-D FEA is investigated for exact side force analysis of Linear Motor for Linear compressor. For the 3-B FEA, ANSYS as commercial tool are used.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.149-153
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• 2005

The electron beam machining provides very high resolution up to nanometer scale, hence the E-beam writing technology is rapidly growing in MEMS and nano-engineering areas. In the optical column of the e-beam writer, there are several lenses condensing and focusing electron beams from electron gun with fringing magnetic fields. The polepieces of these lenses are usually made with high purity iron which is hard to fabricate and very expensive. In this paper, the possibility of using polepiece of object lens composed with pure iron and low carbon steel was examined to reduce cost. The magnetic field at object lens was calculated with finite element method, and practical focusing qualities of SEM pictures were observed comparing for the object lens polepieces with pure iron and two type of composed with low carbon steel.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.172-178
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• 2016

In this paper, we propose a sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET) with vertical band-to-band tunneling (BBT) operation for ultra-low-power (LP) applications. We design a stack structure that is based on the Ge/GaAs heterojunction to realize the vertical BBT operation. The use of vertical BBT operations in devices results in excellent subthreshold characteristics with a reduction in the drain-induced barrier thinning (DIBT) phenomenon. The proposed device with a channel length ($L_{ch}$) of 5 nm exhibits outstanding LP performance with a subthreshold swing (S) of 29.1 mV/dec and an off-state current ($I_{off}$) of $1.12{\times}10^{-11}A/{\mu}m$. In addition, the use of the highk spacer dielectric $HfO_2$ improves the on-state current ($I_{on}$) with an intrinsic delay time (${\tau}$) because of a higher fringing field. We demonstrate a sub-10 nm LP switching device that realizes a good S and lower $I_{off}$ at a lower supply voltage ($V_{DD}$) of 0.2 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.16-20
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• 2020

In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.228-228
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• 2011

낮은 공정비용과 높은 집적도를 가지는 플래시 메모리 소자에 대한 휴대용기기에 응용가능성때문에 연구가 필요하다. 플래시 메모리 중에서도 질화막에 전하를 저장하는 전하 포획 플래시 메모리 소자는 기존의 부유 게이트 플래시 메모리 소자에 비해 공정의 단순하고 비례축소에 용이하며 인접 셀 간의 간섭에 강하다는 장점으로 많은 관심을 갖게 되었다. 소자의 크기가 작아짐에 따라 전하 포획 플래시 메모리 소자 역시 인접 셀 간의 간섭현상과 단채널 효과가 문제를 해결할 필요가 있다. 본 연구에서는 인접 셀 간의 간섭을 최소화 시키기 위하여 metal-oxide-nitride-oxide-silicon (MONOS) 플래시 메모리 소자에 bit-line 방향으로 금속 공간층을 삽입할 구조를 사용하였으며 금속 공간층의 깊이에 따른 전기적 성질을 비교하였다. 게이트 길이는 30 nm, 금속 공간층의 깊이를 채널 표면에서부터 4 nm~12 nm까지 변화하면서 TCAD 시뮬레이션 툴인 Sentaurus를 사용하여 전기적 특성을 계산하였다. 금속 공간층의 깊이가 채널표면에 가까워 질수록 fringing field가 증가하여 드레인 전류가 증가하였고, 금속 공간층의 전기적 차폐로 인해 인접 셀의 간섭현상도 감소하였다. 금속 공간층이 표면에 가까이 위치할수록 전하 저장층을 감싸는 면적이 증가하여 coupling ratio가 높아지기 때문에 subthreshold swing 특성이 향상되었으나, 금속 누설전류가 증가하였다.

• Structural Engineering and Mechanics
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• v.76 no.4
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• pp.451-463
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• 2020

In this paper, a new semi-analytical solution for estimating the pull-in parameters of electrically actuated functionally graded (FG) nanobeams is proposed. All the bulk and surface material properties of the FG nanoactuator vary continuously in thickness direction according to power law distribution. Here, the modified couple stress theory (MCST) and Gurtin-Murdoch surface elasticity theory (SET) are jointly employed to capture the size effects of the nanoscale beam in the context of Euler-Bernoulli beam theory. According to the MCST and SET and accounting for the mid-plane stretching, axial residual stress, electrostatic actuation, fringing field, and dispersion (Casimir or/and van der Waals) forces, the nonlinear nonclassical equation of motion and boundary conditions are obtained derived using Hamilton principle. The proposed semi-analytical solution is derived by employing Galerkin method in conjunction with the Particle Swarm Optimization (PSO) method. The proposed solution approach is validated with the available literature. The freestanding behavior of nanoactuators is also investigated. A parametric study is conducted to illustrate the effects of different material and geometrical parameters on the pull-in response of cantilever and doubly-clamped FG nanoactuators. This model and proposed solution are helpful especially in mechanical design of micro/nanoactuators made of FGMs.

• Steel and Composite Structures
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• v.52 no.5
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• pp.501-513
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• 2024

Two-directional functionally graded materials (2D-FGMs) show extraordinary physical properties which makes them ideal candidates for designing smart micro-switches. Pull-in instability is one of the most critical challenges in the design of electrostatically-actuated microswitches. The present research aims to bridge the gap in the static pull-in instability analysis of microswitches composed of 2D-FGM. Euler-Bernoulli beam theory with geometrical nonlinearity effect (i.e. von-Karman nonlinearity) in conjunction with the modified couple stress theory (MCST) are employed for mathematical formulation. The micro-switch is subjected to electrostatic actuation with fringing field effect and Casimir force. Hamilton's principle is utilized to derive the governing equations of the system and corresponding boundary conditions. Due to the extreme nonlinear coupling of the governing equations and boundary conditions as well as the existence of terms with variable coefficients, it was difficult to solve the obtained equations analytically. Therefore, differential quadrature method (DQM) is hired to discretize the obtained nonlinear coupled equations and non-classical boundary conditions. The result is a system of nonlinear coupled algebraic equations, which are solved via Newton-Raphson method. A parametric study is then implemented for clamped-clamped and cantilever switches to explore the static pull-in response of the system. The influences of the FG indexes in two directions, length scale parameter, and initial gap are discussed in detail.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.9 s.112
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• pp.860-865
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• 2006

In this paper, a novel tunable inter-digital capacitor using dielectric tunable $Bi_2O_3-ZnO-Nb_2O_5(BZN)$ pyrochlore thin films is proposed. In order to improve the tunability and reduce DC bias voltage using the fringing electric field, the electrodes of the inter-digital capacitor are embedded in the thin film. Designed results using a 2.5 D simulator show that the tunability of the proposed inter-digital capacitor improves by 10 %, compared to the conventional inter-digital capacitor. The proposed IDC, which is based on the simulation results, was fabricated, using the BZN thin film deposited by a reactive RF magnetron sputtering on the on the silicon substrate. The fabricated inter-digital capacitor shows the maximum tunability of 50 % at 5.8 GHz and 18 V DC applied.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.427-435
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• 2014

Segmented-channel MOSFETs (SegFETs) can achieve both good performance and variation robustness through the use of $HfO_2$ (a high-k material) to create the shallow trench isolation (STI) region and the very shallow trench isolation (VSTI) region in them. SegFETs with both an HTI region and a VSTI region (i.e., the STI region is filled with $HfO_2$, and the VSTI region is filled with $SiO_2$) can meet the device specifications for high-performance (HP) applications, whereas SegFETs with both an STI region and a VHTI region (i.e., the VSTI region is filled with $HfO_2$, and the STI region is filled with $SiO_2$) are best suited to low-standby power applications. AC analysis shows that the total capacitance of the gate ($C_{gg}$) is strongly affected by the materials in the STI and VSTI regions because of the fringing electric-field effect. This implies that the highest $C_{gg}$ value can be obtained in an HTI/VHTI SegFET. Lastly, the three-dimensional TCAD simulation results with three different random variation sources [e.g., line-edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV)] show that there is no significant dependence on the materials used in the STI or VSTI regions, because of the predominance of the WFV.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.14 no.2
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• pp.24-29
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• 2015

In this paper, a microstrip antenna with isoflux radiation patterns is presented for Low Earth Orbit(LEO) medium-sized satellites. Because of making isoflux patterns, the ground of proposed antenna under the patch was transform into a trapezoid for adjusting fringing field between the patch and ground. Next, the cavity walls were located at end of the ground for reducing back radiation. The proposed antenna was designed to receive S-band uplink(2.025 ~ 2.110 GHz) and the dimensions of the designed antenna with the ground are $160mm{\times}160mm{\times}40mm$ ($1.1{\lambda}{\times}1.1{\lambda}{\times}0.3{\lambda}$, ${\lambda}$ is the free-space wavelength at 2.068 GHz). Measured -10 dB bandwidth was 90 MHz(4.4 %) and it covers the required system bandwidth. Also, measured 3 dB axial ratio was 18 MHz(0.9 %). On the other hand, measured radiation patterns were isoflux patterns and its measured gain was 5.31 dBi at E-plane $46^{\circ}$ in the y-axis pol.