가변형 박막 유전체에 전극을 임베디드 시킨 고가 변형 커패시터

A High Tunable Capacitor Embedding Its Electrodes in Tunable Thin Film Dielectrics

  • 이영철 (국립목포해양대학교 해양전자통신공학부) ;
  • 홍영표 (아주대학교 재료공학과) ;
  • 고경현 (아주대학교 재료공학과)
  • Lee Young-Chul (Division of Marine Electronics and Communication Engineering, Mokpo National Maritime University) ;
  • Hong Young-Pyo (Division of Marine Electronics and Communication Engineering, Ajou University) ;
  • Ko Kyung-Hyun (Division of Marine Electronics and Communication Engineering, Ajou University)
  • 발행 : 2006.09.01

초록

본 논문에서는 가변형 $Bi_2O_3-ZnO-Nb_2O_5(BZN)$ Pyrochlore 박막을 이용한 고가변형 inter-digital capacitor를 제안하였다. 가장자리 전계 효과를 이용한 가변성의 향상과 DC 전압의 감소를 위해 inter-digital capacitor의 전극이 박막 내부에 삽입되었다. 2.5D simulator를 이용한 설계 결과, 제 안된 구조의 inter-digital capacitor(IDC)가 일반적인 구조의 IDC에 비해 가변성이 10 % 향상되었다. 제안된 IDC는 설계 결과를 바탕으로 실리콘 기판 위에 BZN 박막을 이용하여 제작되었다. BZN 박막은 reactive RF magnetron sputtering 방법을 이용하여 증착되었다. 제작된 inter-digital capacitor는 5.8 GHz와 18 V의 DC 인가 전압에서 최대 가변율이 50 %였다.

In this paper, a novel tunable inter-digital capacitor using dielectric tunable $Bi_2O_3-ZnO-Nb_2O_5(BZN)$ pyrochlore thin films is proposed. In order to improve the tunability and reduce DC bias voltage using the fringing electric field, the electrodes of the inter-digital capacitor are embedded in the thin film. Designed results using a 2.5 D simulator show that the tunability of the proposed inter-digital capacitor improves by 10 %, compared to the conventional inter-digital capacitor. The proposed IDC, which is based on the simulation results, was fabricated, using the BZN thin film deposited by a reactive RF magnetron sputtering on the on the silicon substrate. The fabricated inter-digital capacitor shows the maximum tunability of 50 % at 5.8 GHz and 18 V DC applied.

키워드

참고문헌

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