Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of Multi-Fin-Gate GaN HEMTs Using Honeycomb Shaped Nano-Channel

벌집구조의 나노채널을 이용한 다중 Fin-Gate GaN 기반 HEMTs의 제조 공정

  • Kim, Jeong Jin (Electronics and Telecommunications Research Institute) ;
  • Lim, Jong Won (Electronics and Telecommunications Research Institute) ;
  • Kang, Dong Min (Electronics and Telecommunications Research Institute) ;
  • Bae, Sung Bum (Electronics and Telecommunications Research Institute) ;
  • Cha, Ho Young (Metamaterial Electronic Device Research Center, Hongik University) ;
  • Yang, Jeon Wook (School of Semiconductor and Chemical Engineering, Chonbuk National University) ;
  • Lee, Hyeong Seok (Electronics and Telecommunications Research Institute)
  • Received : 2019.10.01
  • Accepted : 2019.11.28
  • Published : 2020.01.01
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Abstract

In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.

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References

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