• Title/Summary/Keyword: Fowler-Nordheim

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New Method for Elimination of Comparator Offset Using the Fowler-Nordheim Stresses (Fowler-Nordheim 스트레스에 의한 MOS 문턱전압 이동현상을 응용한 비교기 옵셋 제거방법)

  • Chung, In-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.3
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    • pp.1-9
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    • 2009
  • In this paper proposed a new method which adaptively eliminates comparator offsets using the threshold voltage shift by the Fowler-Nordheim stress. The method evaluates the sign of comparator offset and gives the FN stress to the stronger MOSFETs of the comparator, leading to offset reduction. We have used an appropriate stressing operation, named 'stress-packet', in order to converge the offset value to zero. We applied the method to the latch-type comparator which is prevalently used for DRAM bitline sense amplifier, and verified through experiments that offsets of the latch-type comparators are nearly eliminated with the stress-packet operations. We also discuss about the reliability issues that must be guaranteed for field application of this method.

Characterizations of nitrided gate oxides by fowler-nordheim tunneling electron injection (Fowler-nordheim 터널링 전자주입에 의한 질화 게이트 산화막의 특성 분석)

  • 장성수;문성근;노관종;노용한;이칠기
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.7
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    • pp.79-87
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    • 1998
  • Nitrided oxides which have been investigated as alternative gate oxide for metal-oxide-semiconductor field effect devices were grown by two-step process using N$_{2}$O gas, and were chaacterized via a fowler-nordheim tunneling(FNT) electron injection technique. Electrical characteristics of nitrided gate oxides were superior to that of control oxides.Further, the FNT electron injection into the nitrided gate oxides reveals that gate oxides degrade more both if electrons were foreced to inject from the gate metal and if thicker nitrided gate oxides were used in the thickness range of 90~130.angs.. Models are suggested to explain these phenomena.

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Current-Voltage Characteristics of Organic Light-Emitting Diodes with a Variation of Temperature (온도 변화에 따른 유기 전기 발광 소자의 전압-전류 특성)

  • Kim, Sang-Geol;Hong, Jin-Ung;Kim, Tae-Wan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.7
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    • pp.322-327
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    • 2002
  • Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/Alq$_3$/Al to understand conduction mechanism. The current-voltage characteristics were measured in the temperature range of 8K ~ 300K. We analyzed an electrical conduction mechanism of the OLEDS using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling. In the temperature range above 150k, the conduction mechanism could be explained by space charge limited current from the inversely proportional temperature dependence of exponent m. The characteristic trap energy is found to be about 0.15ev. At low temperatures below 150k, the Fowler-Nordheim tunneling conduction mechanism is dominant. We have obtained a zero field barrier height to be about 0.6~0.8eV.

Field Emission from Free-standing Nanomembrane For High Energy Ion Detection (Free-standing 박막의 전계 방출 특성을 이용한 고에너지 이온 디텍터에 관한 연구)

  • Park, Jong-Hoo
    • Journal of the Korean Magnetics Society
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    • v.21 no.5
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    • pp.163-166
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    • 2011
  • We describe modified Fowler-Nordheim (FN) field emission equation for the free-standing nanomembrane cathode, which has mechanical degrees of freedom. The derived FN equation agrees well with the experimental data. The free-standing nanomambrane cathode demonstrates its unique ability to detect large biomolecure ions.

Carrier Trap Characteristics varying with insulator thickness of MIS device (MIS소자의 절연막 두께 변화에 따른 캐리어 트랩 특성)

  • 정양희
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.800-803
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    • 2002
  • The MONOS capacitor are fabricated to investigate the carrier trapping due to Fowler-Nordheim tunneling injection. The carrier trapping in scaled multi-dielectric(ONO) depends on the nitride and Op oxide thickness under Fowler_Nordheim tunneling injection. Carriers captured at nitride film could not escape from nitride to gate, but be captured at top oxide and nitride interface traps because of barrier height of top oxide. Therefore, it is expected that the MONOS memory devices using multi dielectric films enhance memory effect and have a long memory retention characteristic.

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The microstructure and conduction mechanism of the nonlinear ZnO varistor with $Al_2O_3$ additions ($Al_2O_3$가 미량 첨가된 비선형성 ZnO 바리스터의 미세구조와 전도기구)

  • 한세원;강형부;김형식
    • Electrical & Electronic Materials
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    • v.9 no.7
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    • pp.708-718
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    • 1996
  • The microstructure and electrical properties of the nonlinear ZnO varistor with A1$_{2}$ $O_{3}$ additions is investigated. The variation of nonlinear behavior with A1$_{2}$ $O_{3}$ additions is indicated from J-E and C-V measurement to be a result of the change of the interface defects density $N_{t}$ at the grain boundaries and the donor concentration $N_{d}$ in the ZnO grains. The optimum composition which has the nonlinear coefficients of -57 was observed in the sample with 0.005wt% A1$_{2}$ $O_{3}$ additions. The conduction mechanism at the pre-breakdown region is consistent with a Schottky thermal emission process obeying a relation given by $J^{\var}$exp[-(.psi.-.betha. $E^{1}$2/)kT] and the conduction process at the breakdown region follows a Fowler-Nordheim tunneling mechanism of the form $J^{\var}$exp(-.gamma./E).

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Switch-on Phenomena and Field Emission from Single-Walled Carbon Nanotubes Embedded in Glass

  • Daradkeh, Samer I.;Mousa, Marwan S.
    • Applied Microscopy
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    • v.47 no.3
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    • pp.86-94
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    • 2017
  • In this study, we will describe a new design of carbon nanotubes tip. Single-walled carbon nanotubes produced using high-pressure CO over Fe particles (HiPCO) at CNI, Houston, TX used in this study. These tips were manufactured by employing a drawing technique using glass puller. Field electron microscopies with tips (cathode) to screen (Anode) separation of ~10 mm was used to characterize the electron emitters. The system was evacuated down to base pressure of (${\sim}10^{-8}$ mbar) when baked at up to (${\sim}200^{\circ}C$) over night. An electron field emission patterns, as well as current versus voltage characteristics and Fowler-Nordheim plots, are discussed.

Fabrication and Characterization of Lateral Vacuum Magnetic Sensor (수평 구조의 진공 자기 센서의 제작 및 특성)

  • Nam, Myung-Woo;Hong, Mee-Ran;Nam, Tae-Chul
    • Journal of Sensor Science and Technology
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    • v.5 no.2
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    • pp.9-14
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    • 1996
  • We have fabricated the vacuum magnetic sensor with a lateral field emitter arrays constructed on n-Si substrate, and investigated its magnetic characteristics. The device consists of 100 field-emitter tips with a $10{\mu}m$ pitch, gate, and split-anodes which are laterally structured. The electron-emission characteristics from the emitter followed the Fowler-Nordheim tunnelling theory. The sensor has good linear characteristics and high sensitivity of 825 %/T.

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Analysis of Space Charge Propagation in a Dielectric Liquid Employing Field-Thermal Electron Emission Model and Finite Element Method (유한요소법과 전계-열전자 방출 모델에 의한 절연유체 내 공간전하 전파해석)

  • Lee, Ho-Young;Lee, Se-Hee
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1406_1407
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    • 2009
  • Fowler-Nordheim의 전자 방출과 열전자 방출 메카니즘을 이용하여 절연유체 내 전계에 의한 도체의 음극에서 전자 방출현상과 열에 의한 열전자 방출현상을 고려하고 유한요소법(Finite Element Method)을 이용하여 해석하였다. 절연유체 내 공간전하에 대한 해석기법으로 푸아송 방정식, 양이온, 음이온, 전자에 대한 전하연속 방정식, 온도에 대한 열 확산 방정식으로 이루어진 5개의 지배방정식에 Fowler-Nordheim의 전계 방출과 Richardson-Dushman의 열전자 방출을 경계조건으로 부여하였다. 단자 전류는 유한요소법과 잘 부합하는 에너지법으로 계산되었다. 쌍 곡선형 PDE의 공간전하 전파에 대한 지배 방정식은 일반적으로 수치적인 불안정성을 가지므로 인공 확산 항을 고려하여 이를 해결하였다. 제안된 해석법은 세 개의 캐리어를 가진 x-y 좌표축의 2차원 평판 모델에 적용하여 그 유효성을 확인하였다.

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Prebreakdown Field Emission of Micrometric Vacuum Gaps under DC Voltage (직류 전압에 의한 미소 진공갭의 전구방전 전계방출)

  • 김정달;이세훈
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.11 no.2
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    • pp.56-63
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    • 1997
  • 진공에서의 파괴는 파괴전구현상으로부터 개시되고, 파괴전구현장중에서 가장 중요한 과정은 Metallic Field Electron Emission과 Micro Discharge이다. 진공내에서 평등전계 갭의 전기적 파괴특성 중 전극에 흐르는 방전전구전류는 전계에 의존하고 Fowler Nordheim 식으로 나타낼 수 있다. 이 논문은 압력 760, 1.2$\times$10-3, 1.2$\times$10-5[torr]과 스테인레스 전극을 미소갭 20, 50, 75, 100[$\mu\textrm{m}$]으로 구성하여 방전전구전류에 대해서 실험적으로 연구했다. 전극갭과 압력변화에 따라 얻어진 I-V 특성곡선을 Fowler Nordheim의 전계방출 이론에 입각해서 분석한 결과, 진공중 미소갭의 전기적 파괴기구는 Metallic Field Electron Emission (M-FEE)에만 의존되었다.

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