• Title/Summary/Keyword: Flash Memory Storage

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Flash-aware Page Management Policy of the Mobile DBMS for Incremental Map Update (점진적 맵 업데이트를 위한 모바일 DBMS의 플래시메모리 페이지 관리 기법)

  • Min, Kyoung Wook;Choi, Jeong Dan;Kim, Ju Wan
    • Spatial Information Research
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    • v.20 no.5
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    • pp.67-76
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    • 2012
  • Recently the mobile DBMS (Database Management System) is popular to store and manage large data in a mobile device. Especially, the research and development about mobile storage structure and querying method for navigation map data in a mobile device have been performed. The performance of the mobile DBMS in which random data accesses are most queries if the NAND flash memory is used as storage media of the DBMS is degraded. The reason is that the performance of flash memory is good in writing sequentially but bad in writing randomly as the features of the NAND flash memory. So, new storage structure and querying policies of the mobile DBMS are needed in the mobile DBMS in which a flash memory is used as storage media. In this paper, we have studied the policy of the database page management to enhance the performance of the frequent random update and applied this policy to the navigation-specialized mobile DBMS which supports incremental map update. And also we have evaluated the performance of this policy by experiments.

Worst Case Response Time Analysis for Demand Paging on Flash Memory (플래시 메모리를 사용하는 demand paging 환경에서의 태스크 최악 응답 시간 분석)

  • Lee, Young-Ho;Lim, Sung-Soo
    • Journal of the Korea Society of Computer and Information
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    • v.11 no.6 s.44
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    • pp.113-123
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    • 2006
  • Flash memory has been increasingly used in handhold devices not only for data storage, but also for code storage. Because NAND flash memory only provides sequential access feature, a traditionally accepted solution to execute the program from NAND flash memory is shadowing. But, shadowing has significant drawbacks increasing a booting time of the system and consuming severe DRAM space. Demand paging has obtained significant attention for program execution from NAND flash memory. But. one of the issues is that there has been no effort to bound demand paging cost in flash memory and to analyze the worst case performance of demand paging. For the worst case timing analysis of programs running from NAND flash memory. the worst case demand paging costs should be estimated. In this paper, we propose two different WCRT analysis methods considering demand paging costs, DP-Pessimistic and DP-Accurate, depending on the accuracy and the complexity of analysis. Also, we compare the accuracy butween DP-Pessimistic and DP-Accurate by using the simulation.

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A File System for Large-scale NAND Flash Memory Based Storage System

  • Son, Sunghoon
    • Journal of the Korea Society of Computer and Information
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    • v.22 no.9
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    • pp.1-8
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    • 2017
  • In this paper, we propose a file system for flash memory which remedies shortcomings of existing flash memory file systems. Besides supporting large block size, the proposed file system reduces time in initializing file system significantly by adopting logical address comprised of erase block number and bitmap for pages in the block to find a page. The file system is suitable for embedded systems with limited main memory since it has small in-memory data structures. It also provides efficient management of obsolete blocks and free blocks, which contribute to the reduction of file update time. Finally the proposed file system can easily configure the maximum file size and file system size limits, which results in portability to emerging larger flash memories. By conducting performance evaluation studies, we show that the proposed file system can contribute to the performance improvement of embedded systems.

A Flash-based B+-Tree using Sibling-Leaf Blocks for Efficient Node Updates and Range Searches

  • Lim, Seong-Chae
    • International Journal of Internet, Broadcasting and Communication
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    • v.8 no.3
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    • pp.12-24
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    • 2016
  • Recently, as the price per bit is decreasing at a fast rate, flash memory is considered to be used as primary storage of large-scale database systems. Although flash memory shows off its high speeds of page reads, however, it has a problem of noticeable performance degradation in the presence of increasing update workloads. When updates are requested for pages with random page IDs, in particular, the shortcoming of flash tends to impair significantly the overall performance of a flash-based database system. Therefore, it is important to have a way to efficiently update the B+-tree, when it is stored in flash storage. This is because most of updates in the B+-tree arise at leaf nodes, whose page IDs are in random. In this light, we propose a new flash B+-tree that stores up-to-date versions of leaf nodes in sibling-leaf blocks (SLBs), while updating them. The use of SLBs improves the update performance of B-trees and provides the mechanism for fast key range searches. To verify the performance advantages of the proposed flash B+-tree, we developed a mathematical performance evaluation model that is suited for assessing B-tree operations. The performance comparisons from it show that the proposed flash B+-tree provides faster range searches and reduces more than 50% of update costs.

An Efficient SLC Transition Method for Improving Defect Rate and Longer Lifetime on Flash Memory (플래시 메모리 상에서 불량률 개선 및 수명 연장을 위한 효율적인 단일 비트 셀 전환 기법)

  • Hyun-Seob Lee
    • Journal of Internet of Things and Convergence
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    • v.9 no.3
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    • pp.81-86
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    • 2023
  • SSD (solid state disk), which is flash memory-based storage device, has the advantages of high density and fast data processing. Therefore, it is being utilized as a storage device for high-capacity data storage systems that manage rapidly increasing big data. However, flash memory, a storage media, has a physical limitation that when the write/erase operation is repeated more than a certain number of times, the cells are worn out and can no longer be used. In this paper, we propose a method for converting defective multi-bit cells into single-bit cells to reduce the defect rate of flash memory and extend its lifetime. The proposed idea distinguishes the defects and treatment methods of multi-bit cells and single-bit cells, which have different physical characteristics but are treated as the same defect, and converts the expected defective multi-bit cells into single-bit cells to improve the defect rate and extend the overall lifetime. Finally, we demonstrate the effectiveness of our proposed idea by measuring the increased lifetime of SSD through simulations.

A Mapping Table Caching Scheme for NAND Flash-based Mobile Storage Devices (NAND 플래시 기반 모바일 저장장치를 위한 사상 테이블 캐싱 기법)

  • Yang, Soo-Hyeon;Ryu, Yeon-Seung
    • The Journal of Society for e-Business Studies
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    • v.15 no.4
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    • pp.21-31
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    • 2010
  • Recently e-business such as online financial trade and online shopping using mobile computes are widely spread. Most of mobile computers use NAND flash memory-based storage devices for storing data. Flash memory storage devices use a software called flash translation layer to translate logical address from a file system to physical address of flash memory by using mapping tables. The legacy FTLs have a problem that they must maintain very large mapping tables in the RAM. In order to address this issues, in this paper, we proposed a new caching scheme of mapping tables. We showed through the trace-driven simulations that the proposed caching scheme reduces the space overhead dramatically but does not increase the time overhead. In the case of online transaction workload in e-business environment, in particular, the proposed scheme manifests better performance in reducing the space overhead.

Highly Scalable NAND Flash Memory Cell Design Embracing Backside Charge Storage

  • Kwon, Wookhyun;Park, In Jun;Shin, Changhwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.2
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    • pp.286-291
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    • 2015
  • For highly scalable NAND flash memory applications, a compact ($4F^2/cell$) nonvolatile memory architecture is proposed and investigated via three-dimensional device simulations. The back-channel program/erase is conducted independently from the front-channel read operation as information is stored in the form of charge at the backside of the channel, and hence, read disturbance is avoided. The memory cell structure is essentially equivalent to that of the fully-depleted transistor, which allows a high cell read current and a steep subthreshold slope, to enable lower voltage operation in comparison with conventional NAND flash devices. To minimize memory cell disturbance during programming, a charge depletion method using appropriate biasing of a buried back-gate line that runs parallel to the bit line is introduced. This design is a new candidate for scaling NAND flash memory to sub-20 nm lateral dimensions.

A Mobile Flash File System - MJFFS (모바일 플래시 파일 시스템 - MJFFS)

  • 김영관;박현주
    • Journal of Information Technology Applications and Management
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    • v.11 no.2
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    • pp.29-43
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    • 2004
  • As the development of an information technique, gradually, mobile device is going to be miniaturized and operates at high speed. By such the requirements, the devices using a flash memory as a storage media are increasing. The flash memory consumes low power, is a small size, and has a fast access time like the main memory. But the flash memory must erase for recording and the erase cycle is limited. JFFS is a representative filesystem which reflects the characteristics of the flash memory. JFFS to be consisted of LSF structure, writes new data to the flash memory in sequential, which is not related to a file size. Mounting a filesystem or an error recovery is achieved through the sequential approach. Therefore, the mounting delay time is happened according to the file system size. This paper proposes a MJFFS to use a multi-checkpoint information to manage a mass flash file system efficiently. A MJFFS, which improves JFFS, divides a flash memory into the block for suitable to the block device, and stores file information of a checkpoint structure at fixed interval. Therefore mounting and error recovery processing reduce efficiently a number of filesystem access by collecting a smaller checkpoint information than capacity of actual files. A MJFFS will be suitable to a mobile device owing to accomplish fast mounting and error recovery using advantage of log foundation filesystem and overcoming defect of JFFS.

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Cost Models of Energy-based Query Optimization for Flash-aware Embedded DBMS (플래시 기반 임베디드 DBMS의 전력기반 질의 최적화를 위한 비용 모델)

  • Kim, Do-Yun;Park, Sang-Won
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.45 no.3
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    • pp.75-85
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    • 2008
  • The DBMS are widely used in embedded systems. The flash memory is used as a storage device of a embedded system. The optimizer of existing database system assumes that the storage device is disk. There is overhead to overwrite on flash memory unlike disk. The block of flash memory should be erased before write. Due to this reason, query optimization model based on disk does not adequate for flash-aware database. Especially embedded system should minimize the consumption of energy, but consumes more energy because of excessive erase operations. This paper proposes new energy based cost model of embedded database and shows the comparison between disk based cost model and energy based cost model.

An Efficient Buffer Page Replacement Strategy for System Software on Flash Memory (플래시 메모리상에서 시스템 소프트웨어의 효율적인 버퍼 페이지 교체 기법)

  • Park, Jong-Min;Park, Dong-Joo
    • Journal of KIISE:Databases
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    • v.34 no.2
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    • pp.133-140
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    • 2007
  • Flash memory has penetrated our life in various forms. For example, flash memory is important storage component of ubiquitous computing or mobile products such as cell phone, MP3 player, PDA, and portable storage kits. Behind of the wide acceptance as memory is many advantages of flash memory: for instances, low power consumption, nonvolatile, stability and portability. In addition to mentioned strengths, the recent development of gigabyte range capacity flash memory makes a careful prediction that the flash memory might replace some of storage area dominated by hard disks. In order to have overwriting function, one block must be erased before overwriting is performed. This difference results in the cost of reading, writing and erasing in flash memory[1][5][6]. Since this difference has not been considered in traditional buffer replacement technologies adopted in system software such as OS and DBMS, a new buffer replacement strategy becomes necessary. In this paper, a new buffer replacement strategy, reflecting difference I/O cost and applicable to flash memory, suggest and compares with other buffer replacement strategies using workloads as Zipfian distribution and real data.