• Title/Summary/Keyword: Field ring

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Characteristic Analysis of 1200V Insulated Gate Bipolar Transistor Devices (1200V급 절연게이트 바이폴라 트랜지스터 특성 해석)

  • Kim, Sang-Cheol;Kim, Hyung-Woo;Kang, In-Ho;Joo, Sung-Jae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.212-213
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    • 2008
  • This paper describes the analysis of the device characteristics of the NPT type 1200V Insulated gate Bipolar Transistor. In case of NPT type IGBT devices, optimized n-epi layer thickness and concentration is important to obtain low on-state voltage and breakdown voltage characteristics. In this paper, we analyzed on-state and off-state characteristics of NPT type IGBT. Breakdown voltage of designed IGBT was higher than 1200V when we optimized Field Limiting Ring structures. And also, on-state voltage characteristics was shown less then 2.5V at 25A of drain current.

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The Junction Termination Design Employing Shallow Trench and Field Limiting Ring for 1200 V-Class Devices (얕은 트렌치와 전계 제한 확산 링을 이용한 접합 마감 설계의 1200 V급 소자에 적용)

  • 하민우;오재근;최연익;한민구
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.6
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    • pp.300-304
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    • 2004
  • We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.

Vacuum Gauge Control System Using MSCC for PLS (MSCC를 이용한 가속기 진공장치 감시 시스템 개발)

  • Yoon, J.C.;Lee, T.Y.;Hang, J.Y.;Nam, S.Y.
    • Proceedings of the KIEE Conference
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    • 2001.07d
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    • pp.2169-2171
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    • 2001
  • The vacuum gauge control system has been designed and implemented using multi-serial communication controllers (MSCC) for the 2.5 Gev storage ring at the Pohang Accelerator Laboratory (PAL). There are 20 Balzers vacuum gauges and 17 Granville-Phillips vacuum gauges at the storage ring. A MSCC have two RS485 (max speed 460.8Kbps) field network port, 8 channel serial communication ports (max speed 460.8Kbps) connected to gauge controller for serial communication control. 12 MSCCs are connected to a personal computer (PC) through the RS485 field network. The PC can automatically control the MSCCs by sending set of commands through the network. The commands specify the duration of the MODBUS protocol. Upon receiving a command from a PC running under Windows2000 through the network, the MSCC communicate through the serial output ports to gauge controller. In this paper, we describe control structure and scheme of the vacuum gauge control system.

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Analysis of Electrical Characteristics According to Fabrication of 500 V Unified Trench Gate Power MOSFET

  • Kang, Ey Goo
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.4
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    • pp.222-226
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    • 2016
  • This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF6. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

Simulation of Spinning Concentric Annular Ring Reticle Seeker and IRCCM using Correlation Coefficient (회전 동심원 레티클 탐색기의 시뮬레이션 및 상관계수를 이용한 반대응기법)

  • 홍현기;장성갑;두경수;최종수
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.5A
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    • pp.763-771
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    • 2000
  • Reticle systems, which are widely used in infrared (IR) missile seekers, are considered to be the classical approach for estimating the position of a target in the field of view (FOV). This paper presents an effective simulation tool that gives tracking results of the concentric annular ring reticle seeker. We construct the concentric annular ring reticle seeker on Matlab-Simulink for a dynamic simulation. Our simulation model provides tracking results in various cases, and is applicable to the study of the development of the advanced seekers. While false targets such as flares are presented in the FOV, simulation results show that the existing seeker cannot determine a precise target location. In order to decrease the susceptibility to countermeasures such as flares, we propose an efficient counter-countermeasure using the correlated relationship of modulated signals and the references. We have ascertained that the reticle seeker using our technique make more effective target tracking than previous seekers.

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FUNDAMENTAL UNITS AND REGULATORS OF AN INFINITE FAMILY OF CYCLIC QUARTIC FUNCTION FIELDS

  • Lee, Jungyun;Lee, Yoonjin
    • Journal of the Korean Mathematical Society
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    • v.54 no.2
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    • pp.417-426
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    • 2017
  • We explicitly determine fundamental units and regulators of an infinite family of cyclic quartic function fields $L_h$ of unit rank 3 with a parameter h in a polynomial ring $\mathbb{F}_q[t]$, where $\mathbb{F}_q$ is the finite field of order q with characteristic not equal to 2. This result resolves the second part of Lehmer's project for the function field case.

GENERATION OF RAY CLASS FIELDS OF IMAGINARY QUADRATIC FIELDS

  • Jung, Ho Yun
    • Journal of the Chungcheong Mathematical Society
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    • v.34 no.4
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    • pp.317-326
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    • 2021
  • Let K be an imaginary quadratic field other than ℚ(${\sqrt{-1}}$) and ℚ(${\sqrt{-3}}$), and let 𝒪K be its ring of integers. Let N be a positive integer such that N = 5 or N ≥ 7. In this paper, we generate the ray class field modulo N𝒪K over K by using a single x-coordinate of an elliptic curve with complex multiplication by 𝒪K.

HIGH DIMENSION PRUFER DOMAINS OF INTEGER-VALUED POLYNOMIALS

  • Cahen, Paul-Jean;Chabert, Jean-Luc;K.Alan Loper
    • Journal of the Korean Mathematical Society
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    • v.38 no.5
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    • pp.915-935
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    • 2001
  • Let V be any valuation domain and let E be a subset of the quotient field K of V. We study the ring of integer-valued polynomials on E, that is, Int(E, V)={f$\in$K[X]|f(E)⊆V}. We show that, if E is precompact, then Int(E, V) has many properties similar to those of the classical ring Int(Z).In particular, Int(E, V) is dense in the ring of continuous functions C(E, V); each finitely generated ideal of Int(E, V) may be generated by two elements; and finally, Int(E, V) is a Prufer domain.

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TRANSFER PROPERTIES OF GORENSTEIN HOMOLOGICAL DIMENSION WITH RESPECT TO A SEMIDUALIZING MODULE

  • Di, Zhenxing;Yang, Xiaoyan
    • Journal of the Korean Mathematical Society
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    • v.49 no.6
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    • pp.1197-1214
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    • 2012
  • The classes of $G_C$ homological modules over commutative ring, where C is a semidualizing module, extend Holm and J${\varnothing}$gensen's notions of C-Gorenstein homological modules to the non-Noetherian setting and generalize the classical classes of homological modules and the classes of Gorenstein homological modules within this setting. On the other hand, transfer of homological properties along ring homomorphisms is already a classical field of study. Motivated by the ideas mentioned above, in this article we will investigate the transfer properties of C and $G_C$ homological dimension.