• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.237-237
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• 2006

P(VDF/TrFE(72/28) ultrathin films were used in the fabrication of Metal-Ferroelectric polymer-Metal (MFM) single bit device with special emphasis on uniform film surface, faster dipole switching time under applied external field and longer memory retention time. AFM and FTIR-GIRAS were complementary in analyzing surface crystalline morphology and the resultant change in chain orientation with varying thermal history. DC-EFM technique was used to 'write-read-erase' the data on the memory bit in a much faster time than P-E studies. The results obtained from this study will enable us to have a good understanding of the ferroelectric and piezoelectric behavior of P(VDF/TrFE)(72/28) thin films suitable for high density data storage applications.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.725-728
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• 2000

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, We have systematically investigated the variation of grain sizes depending on the process condition of two-step process. Both in-situ annealing and ex-annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current, XRD and SEM were performed to investigate the electircal properties and microstructural properties of Pb(La, Ti)O$_3$ films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.861-864
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• 2000

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.71-73
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• 2005

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately 60 mm. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 1382 and 1.90%, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13kV/cm, respectively.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.66-74
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• 2000

The structural and electrical characteristics of SBT thin films, fabricated on Pt/Ti/SiO\ulcorner/Si substrates by a pulsed laser deposition(PLD), were investigated to develop ferroelectric thin films for capacitor lay-ers of FRAM. EFfects of target composition on the characteristics of SBT thin films were examined. Target were prepared by mixed oxide method, and composition of Sr/Bi/Ta on SBT was changed to 1/2/2, 1/2.4/2, 1/2.8/2, 0.8/2/2 and 1.2/2/2. SBt thin films were fabricated, as a function of substrate temperature and oxygen pressure, by PLD. The optimized ocndition, to fabricate high quality SBT thin films, was 700 $^{\circ}C$ of substrate temperature, 200 mTorr of oxygen pressure, and 2 J/$\textrm{cm}^2$ of laser energy density. Maximum remnant value(2Pr) of 9.0 $\mu$C/$\textrm{cm}^2$, coercive field value(Ec) of 50 kV/cm, dielectric constant value of 166, and leakage current densities of <10\ulcorner A/$\textrm{cm}^2$ were observed for the films with 1/2/2 composition, which was prepared at the above PLD condition.

• ETRI Journal
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• 제33권1호
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• pp.132-135
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• 2011

In this letter, we study the contemporary technologies for making ferroelectric films and the possibility of using the oscillator model of PZT-22 to analyze its ferroelectric properties. The material showed permittivity dispersion at 65 KHz and 88.5 KHz. We obtained relative attenuation ${\gamma}$, relaxation time ${\tau}$, and ${\varepsilon}_{max}$ of the material as 0.0008319, 0.5 s, and 603.438, respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 춘계학술발표대회 및 제10회 신소재 심포지엄 논문개요집
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• pp.21.2-21.2
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• 2006

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.45-45
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• 2002

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.486-491
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• 2002

We have fabricated $Bi_{3.25}La_{0.75}Ti_3O_12$ (BLT) thin films on the Pt/Ti/$SiO_2$/Si substrates using a metalorganic decomposition (MOD) method with annealing temperature from $550^{\circ}C$ to $750^{\circ}C$. The structural properties of BLT films examined by x-ray diffraction (XRD). From XRD analysis. BLT thin films show polycrystalline structure. The layered-perovskite phase was obtained by spin-on films at above $600^{\circ}C$ for 1h. Scanning electron microscopy (SEM) showed uniform surface composed of rodlike grains. The grain size of BLT films increased with increasing annealing temperature. The BLT film annealed at $650^{\circ}C$ was measured to have a dielectric constant of 279, dielectric loss of 1.85(%), remanent polarization of $25.66\mu C/\textrm{cm}^2$, and coercive field of 84.75 kV/cm. The BLT thin films showed little polarization fatigue test up to $3.5{\times}10^9$ bipolar cycling at 5 V and 100 kHz.