Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Prepared by MOD

MOD 법으로 제작된 Bi3.25La0.75Ti3O12 박막의 강유전 특성

  • Published : 2002.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

We have fabricated $Bi_{3.25}La_{0.75}Ti_3O_12$ (BLT) thin films on the Pt/Ti/$SiO_2$/Si substrates using a metalorganic decomposition (MOD) method with annealing temperature from $550^{\circ}C$ to $750^{\circ}C$. The structural properties of BLT films examined by x-ray diffraction (XRD). From XRD analysis. BLT thin films show polycrystalline structure. The layered-perovskite phase was obtained by spin-on films at above $600^{\circ}C$ for 1h. Scanning electron microscopy (SEM) showed uniform surface composed of rodlike grains. The grain size of BLT films increased with increasing annealing temperature. The BLT film annealed at $650^{\circ}C$ was measured to have a dielectric constant of 279, dielectric loss of 1.85(%), remanent polarization of $25.66\mu C/\textrm{cm}^2$, and coercive field of 84.75 kV/cm. The BLT thin films showed little polarization fatigue test up to $3.5{\times}10^9$ bipolar cycling at 5 V and 100 kHz.

Keywords

References

  1. Science v.246 Ferroelectric memories J.F.Scott;C.A.Paz de Araujo https://doi.org/10.1126/science.246.4936.1400
  2. 전기전자재료학회논문지 v.11 no.3 MOD법에 의한 강유전성 SrxBiyTa₂O9+α (SBT)박막의 제조 및 후열처리 효과에 관한 연구 김병호;윤희성;정병식;신동석
  3. Appl. Phys. Lett. v.66 Preparation and ferroelectric properties of SrBi₂Ta₂O9 thin films K.Amanuma;T.Hase;Y.Miyasaka https://doi.org/10.1063/1.113140
  4. 전기전자재료학회논문지 v.12 no.2 PLD기법에 의한 강유전체 SBT/YBCO/LaAIO₃헤테로 박막의 제작 및 특성 이재형;문병무;고중혁;구상모
  5. 전기전자재료학회논문지 v.13 no.8 MOD 법으로 제조한 강유전성 SBT 박막에서 하부전극이 유전 및 전기적 특성에 미치는 영향 김태훈;김병호;송석표
  6. J. Appl. Phys. v.88 Ferroelectric properties of Bi3.25La0.75Ti₃O12 thin films prepared by chemical solution deposition D.Wu;A.Li;T.Zhu https://doi.org/10.1063/1.1322387
  7. Nature v.401 Lanthanum-substituted bismuth titanate for use in non-volatile memories B.H.Park;B.S.Kang;S.D.Bu;T.W.Noh;J.Lee;W.Jo https://doi.org/10.1038/44352
  8. Acta. Cryst. v.25 no.25 Effective ionic radii in oxides and fluorides R.D.Shannon;C.T.Prewitt https://doi.org/10.1107/S0567740869003220
  9. J. Appl. Phys. v.90 Sol-Gel derived grain orient-ed barium strontium titanate thin films for phase shifter application S.B.Majumder;M.Jain;A.Martinez;R.S.Katiyar https://doi.org/10.1063/1.1378811
  10. J. Am. Ceram. Soc. v.81 Intrinsic and extrinsic size effects in fine-grained morphotropic phase boundary lead zirconate titanate ceramics C.A.Randall;N.Kim;J.P.Jucera;W.Cao;T.R.Shrout https://doi.org/10.1111/j.1151-2916.1998.tb02389.x
  11. Appl. Phys. Lett. v.68 Metalorganic chemical vapor deposition of ferroelectric SrBi₂Ta₂O9 thin films T.Li;Y.Zhu;S.B.Desu;C.H.Peng;M.Nagata https://doi.org/10.1063/1.116486
  12. Jpn. J. Appl. Phys. v.34 Preparation of Bi-based ferroelectric thin films by Sol-Gel method T.Atsuki;N.Soyama;T.Yonezawa;K.Ogi https://doi.org/10.1143/JJAP.34.5096
  13. Ferroelectrics v.233 Electrical properties of ferroelectric Bi₄Ti₃O12 thin films by APMOCVD H.Wang;X.N.Shen;X.J.Su;Z.Wang;S.X.Shang;M.Wang