Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural and Electrical Characteristics of the SBT Thin Films Prepared by PLD Method

PLD법에 의해 제조된 SBT 박막의 구조 및 전기적 특성

  • 마석범 (용인송담대학 전기설비과) ;
  • 오형록 (연세대학교 전기·컴퓨터공학과) ;
  • 김성구 (연세대학교 전기·컴퓨터공학과) ;
  • 장낙원 (삼성전자 반도체연구소 TD팀) ;
  • 박창엽 (연세대학교 전기·컴퓨터공학과)
  • Published : 2000.01.01
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Abstract

The structural and electrical characteristics of SBT thin films, fabricated on Pt/Ti/SiO\ulcorner/Si substrates by a pulsed laser deposition(PLD), were investigated to develop ferroelectric thin films for capacitor lay-ers of FRAM. EFfects of target composition on the characteristics of SBT thin films were examined. Target were prepared by mixed oxide method, and composition of Sr/Bi/Ta on SBT was changed to 1/2/2, 1/2.4/2, 1/2.8/2, 0.8/2/2 and 1.2/2/2. SBt thin films were fabricated, as a function of substrate temperature and oxygen pressure, by PLD. The optimized ocndition, to fabricate high quality SBT thin films, was 700 $^{\circ}C$ of substrate temperature, 200 mTorr of oxygen pressure, and 2 J/$\textrm{cm}^2$ of laser energy density. Maximum remnant value(2Pr) of 9.0 $\mu$C/$\textrm{cm}^2$, coercive field value(Ec) of 50 kV/cm, dielectric constant value of 166, and leakage current densities of <10\ulcorner A/$\textrm{cm}^2$ were observed for the films with 1/2/2 composition, which was prepared at the above PLD condition.

Keywords

References

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