Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Laser Energy Density Dependence Characteristics of PLZT Thin Films prepared by a PLD for Memory Device

PLD법에 의한 고집적 DRAM용 PLZT 박막의 레이저 에너지 밀도에 따른 특성

  • 마석범 (용인송담대학 전기설비과) ;
  • 장낙원 (삼성전자 반도체연구소 TD팀) ;
  • 백동수 (KIST 박막기술연구센터) ;
  • 최형욱 (경원대학교 전기전자공학부) ;
  • 박창엽 (연세대학교 전기·컴퓨터공학과)
  • Published : 2000.01.01
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Abstract

The structural and electrical characteristics of PLZT thin films fabricated onto Pt/Ti/SiO\ulcorner/Si substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films were fabricated with different energy density by pulsed laser deposition. This PLZT thin films of 5000 thickness were crystallized at 600 $^{\circ}C$, 200 mTorr O\ulcorner pressure for 2 J/$\textrm{cm}^2$ laser energy density, the arain structure was transformed from planar to columnar grain. It was clearly noted from the SEM observations that oxygen pressured laser powers affect microstructures of the PLZT thin films. 14/50/50 PLZT this film showed a maximum dielectric constant value of $\varepsilon$\ulcorner=1289.9. P-E hysteresis loop of 14/50/50 PLZT thin film was flim ferro-electric. Leakage current density of 14/50/50 PLZT thin film was 10\ulcorner A/$\textrm{cm}^2$.

Keywords

References

  1. Proceedings of the IEEE v.77 no.3 Memory Cell and Technology Issues for 64 and 256-Mbit One Transistor Cell MOS DRAMs A. F. Tasch Jr.;L. H. Parker
  2. IEEE Transactions on Electron Devices v.39 no.9 Electrical Characteristics of Ferroelectric PZT Thin Films For DRAM Applications Raza Moazzami;Chenming Hu;William H. Shepherd
  3. Mat. Res. Soc. Symp. Proc. v.361 The effect of La concentration on the properties of PLT thin films : from the perspective of DRAM application Seong Jun Kang;Jeong Seon Ryoo;Yung Sup Yoon
  4. J. Am. Ceram. Soc. v.54 Hot-pressed (Pb,La) (Zr,Ti)O₃Ferroelectric Ceramics for Electrooptic Application G. H. Haetling;C. E. Land
  5. Pulse Laser Deposition of Thin films D. b. Chrisey;G. K. Hubler
  6. 전기학회지 v.46 no.4 레이저 어블레이션에 의한 강유전체 박막의 제작 및 응용 박창엽;이상렬
  7. Integrated Ferroelectrics v.5 High-Permittivity Lead-Based Perovskite Dielectric for DRAM Application R. E. Jones(et al.)
  8. IEDM Tech. Dig. Electrical and Reliability Characteristics of Lead-Zirconate-Titanate(PZT) Ferroelectric Thin Films for DRAM Applications J. Carrano(et al.)
  9. IEEE Trans. on Electron Devices ED-39 Electrical Characteristics of Ferroelectric PZT Thin Films for DRAM Applications R. Mozzami(et al.)