Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Annealing Effect of Pb(La, Ti)$O_3$Thin Films Grown by Pulsed Laser Deposition for Memory Device Application

메로리 소자 응용을 위한 펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과

  • 허창회 (연세대학교 전기컴퓨터공학과) ;
  • 심경석 (연세대학교 전기컴퓨터공학과) ;
  • 이상렬 (연세대학교 전기컴퓨터공학과)
  • Published : 2000.09.01
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Abstract

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, We have systematically investigated the variation of grain sizes depending on the process condition of two-step process. Both in-situ annealing and ex-annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current, XRD and SEM were performed to investigate the electircal properties and microstructural properties of Pb(La, Ti)O$_3$ films.

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