• Title/Summary/Keyword: FUSI

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Study of Post-silicidation Annealing Effect on SOI Substrate (SOI 기판에서 Silicide의 후속 공정 열처리 영향에 대한 연구)

  • Lee, Won-Jae;Oh, Soon-Young;Kim, Yong-Jin;Zhang, Ying-Ying;Zhong, Zhun;Lee, Shi-Guang;Jung, Soon-Yen;Kim, Yeong-Cheol;Wang, Jin-Suk;Lee, Hi-Deok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.3-4
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    • 2006
  • In this paper, a nickel silicide technology with post-silicidation annealing effect for thin film SOI devices is investigated in detail. Although lower resistivity Ni silicide can be easily obtained at low forming temperature, poor thermal stability and changing of characteristic are serious problems during the post silicidation annealing like ILD (Inter Layer Dielectric) deposition or metallization. So these effects are observed as deposited Ni thickness differently on As doped SOI (Si film 30nm). Especially, the sheet resistance of Ni thickness deposited 20nm was lower than 30nm before the post silicidation annealing. But after the post silicidation annealing, the sheet resistance was changed. Therefore, in thin film SOI MOSFETs or Ni-FUSI technology that the Si film is less than 50nm, it is important to decide the thickness of deposited Ni in order to avoid forming high resistivity silicide.

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THE DYNAMICAL EVOLUTION OF GLOBULAR CLUSTERS WITH STELLAR MASS LOSS

  • Kim, Chang-Hwan;Chun, Mun-Suk;Min, Kyung-W.
    • Journal of Astronomy and Space Sciences
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    • v.8 no.1
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    • pp.11-23
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    • 1991
  • The dynamical evolution of globular clusters is studied using the orbit-averaged multicomponent Fokker-Planck equation. The original code developed by Cohn(1980) is modi-fied to include the effect of stellar evolutions. Plommer's model is chosen as the initial density distribution with the initial mass function index $\alpha$=0.25, 0.65, 1.35, 2.35, and 3.35. The mass loss rate adopted in this work follows that of Fusi-Pecci and Renzini(1976). The stellar mass loss acts as the energy source, and thus affects the dynamical evolution of globular clusters by slowing down the evolution rate and extending the core collapse time Tcc. And the dynamical length scale $$R_c, $$R_h is also extended. This represents the expansion of cluster due to the stellar mass loss.

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Multiple input describing function analysis of non-classical aileron buzz

  • Zafar, Muhammad I.;Fusi, Francesca;Quaranta, Giuseppe
    • Advances in aircraft and spacecraft science
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    • v.4 no.2
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    • pp.203-218
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    • 2017
  • This paper focuses on the computational study of nonlinear effects of unsteady aerodynamics for non-classical aileron buzz. It aims at a comprehensive investigation of the aileron buzz phenomenon under varying flow parameters using the describing function technique with multiple inputs. The limit cycle oscillatory behavior of an asymmetrical airfoil is studied initially using a CFD-based numerical model and direct time marching. Sharp increases in limit cycle amplitude for varying Mach numbers and angles of attack are investigated. An aerodynamic describing function is developed in order to estimate the variation of limit cycle amplitude and frequency with Mach number and angle of attack directly, without time marching. The describing function results are compared to the amplitudes and frequencies predicted by the CFD calculations for validation purposes. Furthermore, a limited sensitivity analysis is presented to demonstrate the potential of the approach for aeroelastic design.

Property and Microstructure Evolution of Nickel Silicides on Nano-thick Polycrystalline Silicon Substrates (나노급 다결정 실리콘 기판 위에 형성된 니켈실리사이드의 물성과 미세구조)

  • Kim, Jong-Ryul;Choi, Young-Youn;Song, Oh-Sung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.1
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    • pp.16-22
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    • 2008
  • We fabricated thermally-evaporated 10 nm-Ni/30 nm and 70 nm Poly-Si/200 nm-$SiO_2/Si$ structures to investigate the thermal stability of nickel silicides formed by rapid thermal annealing(RTA) of the temperature of $300{\sim}1100^{\circ}C$ for 40 seconds. We employed for a four-point tester, field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), high resolution X-ray diffraction(HRIXRD), and scanning probe microscope(SPM) in order to examine the sheet resistance, in-plane microstructure, cross-sectional microstructure evolution, phase transformation, and surface roughness, respectively. The silicide on 30 nm polysilicon substrate was stable at temperature up to $900^{\circ}C$, while the one on 70 nm substrate showed the conventional $NiSi_2$ transformation temperature of $700^{\circ}C$. The HRXRD result also supported the existence of NiSi-phase up to $900^{\circ}C$ for the Ni silicide on the 30 nm polysilicon substrate. FE-SEM and TEM confirmed that 40 nm thick uniform silicide layer and island-like agglomerated silicide phase of $1{\mu}m$ pitch without residual polysilicon were formed on 30 nm polysilicon substrate at $700^{\circ}C\;and\;1000^{\circ}C$, respectively. All silicides were nonuniform and formed on top of the residual polysilicon for 70 nm polysilicon substrates. Through SPM analysis, we confirmed the surface roughness was below 17 nm, which implied the advantage on FUSI gate of CMOS process. Our results imply that we may tune the thermal stability of nickel monosilicide by reducing the height of polysilicon gate.

Formation of Nickel Silicide from Atomic Layer Deposited Ni film with Ti Capping layer

  • Yun, Sang-Won;Lee, U-Yeong;Yang, Chung-Mo;Na, Gyeong-Il;Jo, Hyeon-Ik;Ha, Jong-Bong;Seo, Hwa-Il;Lee, Jeong-Hui
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2007.06a
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    • pp.193-198
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    • 2007
  • The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

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Nickel Film Deposition Using Plasma Assisted ALD Equipment and Effect of Nickel Silicide Formation with Ti Capping Layer (Plasma Assisted ALD 장비를 이용한 니켈 박막 증착과 Ti 캡핑 레이어에 의한 니켈 실리사이드 형성 효과)

  • Yun, Sang-Won;Lee, Woo-Young;Yang, Chung-Mo;Ha, Jong-Bong;Na, Kyoung-Il;Cho, Hyun-Ick;Nam, Ki-Hong;Seo, Hwa-Il;Lee, Jung-Hee
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.3
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    • pp.19-23
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    • 2007
  • The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

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