• Journal of Yeungnam Medical Science
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• 제6권1호
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• pp.151-163
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• 1989

건강한 성인 83명을 무작위로 선정하여 실시한 신경전도속도 검사에서 다음과 같은 결과를 얻었다. 1) 상지의 정중신경에서는 운동신경의 TL이 3.0-4.2msec 이고, MNCV는 각각 52.1-70.3m/sec(W-E), 44.6-71.0m/sec(E-Ax), 56.6-70.8m/sec(W-E), 50.5-75.1m/sec(E-Ax)이며, CNAP의 진폭은 $6.5-46.1{\mu}V$였다. 2) 척골신경에서는 운동신경의 TL이 2.4-3.4msec이고, MNCV는 각각 54.6-72.8m/sec(W-E), 41.1-64.9m/sec(E-Ax)이며, 진폭은 3.1-12.0mV였다. 척골신경의 MNCV는 각각 31.1-44.7m/sec(F-W)m, 55.9-70.9m/sec(W-E), 46.9-67.1m/sec(E-Ax)이며, CNAP의 진폭은 4.8-42.9${\mu}V$범위였다. 3) 요골신경에서는 운동신경의 TL이 1.9-2.7msec이고, MNCV는 53.1-77.5m/sec(W-E)이며, CMAP의 진폭은 1.1-6.6mV범위였다. 요골신경의 SNCV는 각각 38.5-52.1m/sec(F-V), 53.2-75.2m/sec(W-E) 이며, CNAP의 진폭은 $2.5-9.2{\mu}V$범위였다. 4) 하지의 비골신경에서는 운동신경의 TL이 3.5-5.7msec이며, MNCV는 각각 44.4-58.6m/sec(A-FH), 42.8-65.8m/sec(FH-PF)이며, CMAP의 진폭은 0.6-12.7mV 범위였다. 5) 후경골신경에서는 TL이 4.0-6.2m/sec이며, MNCV는 40.6-60.6m/sec이며, CMAP의 진폭은 3.9-29.2mV범위였다. 6) 비골신경의 SNCV는 37.5-49.5m/sec이며, CNAP의 진폭은 $0.7-17.1{\mu}V$범위였다. 7) H-반사의 평균 잠복기는 28.4msec였다.

• Bulletin of the Korean Chemical Society
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• 제35권10호
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• pp.2963-2968
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• 2014

We report synthesis and photovoltaic properties of two new conjugated copolymers, PCPDTQxF and PDTSQxF, with 6,7-difluoro-2,3-dihexylquinoxaline unit prepared by Stille coupling reaction. The advantage of 6,7-difluoro-2,3-dihexylquinoxaline based copolymer are high PCEs due to lower HOMO energy level, long wavelength absorption and high hole mobility. The solid films of PCPDTQxF and PDTSQxF showed absorption bands with maximum peaks at about 623 and 493 nm and the absorption onsets at 711 and 635 nm, corresponding to band gaps of 1.74 and 1.95 eV, respectively. The oxidation onsets of the PCPDTQxF and PDTSQxF polymers were estimated to be 0.68 and 0.95 V, which correspond to HOMO energy levels of -5.48 and -5.75 eV, respectively. The PDTSQxF has lower HOMO energy level as compared to PCPDTQxF to lead higher $V_{OC}$ value. The device comprising PCPDTQxF:PCBM (1:2) dissolved to a concentration of 1 wt % in ODCB showed $V_{OC}$ value of 0.62 V, $J_{SC}$ value of $1.14mA/cm^2$, and FF of 0.35, which yielded PCE of 0.25%.

• Journal of applied mathematics & informatics
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• 제35권1_2호
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• pp.121-130
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• 2017

This study is concerned with the existence of positive solution for the following nonlinear elliptic system $$\{-M_1(\int_{\Omega}{\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^pdx)div({\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^{p-2}{\nabla}u)\\{\hfill{120}}={\mid}x{\mid}^{-(a+1)p+c_1}\({\alpha}_1A_1(x)f(v)+{\beta}_1B_1(x)h(u)\),\;x{\in}{\Omega},\\-M_2(\int_{\Omega}{\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^qdx)div({\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^{q-2}{\nabla}v)\\{\hfill{120}}={\mid}x{\mid}^{-(b+1)q+c_2}\({\alpha}_2A_2(x)g(u)+{\beta}_2B_2(x)k(v)\),\;x{\in}{\Omega},\\{u=v=0,\;x{\in}{\partial}{\Omega},$$ where ${\Omega}$ is a bounded smooth domain of ${\mathbb{R}}^N$ with $0{\in}{\Omega}$, 1 < p, q < N, $0{\leq}a$ < $\frac{N-p}{p}$, $0{\leq}b$ < $\frac{N-q}{q}$ and ${\alpha}_i,{\beta}_i,c_i$ are positive parameters. Here $M_i,A_i,B_i,f,g,h,k$ are continuous functions and we discuss the existence of positive solution when they satisfy certain additional conditions. Our approach is based on the sub and super solutions method.

• ETRI Journal
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• 제32권4호
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• pp.520-529
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• 2010

In this paper, we present a low-voltage low-dropout voltage regulator (LDO) for a system-on-chip (SoC) application which, exploiting the multiplication of the Miller effect through the use of a current amplifier, is frequency compensated up to 1-nF capacitive load. The topology and the strategy adopted to design the LDO and the related compensation frequency network are described in detail. The LDO works with a supply voltage as low as 1.2 V and provides a maximum load current of 50 mA with a drop-out voltage of 200 mV: the total integrated compensation capacitance is about 40 pF. Measurement results as well as comparison with other SoC LDOs demonstrate the advantage of the proposed topology.

• 한국진공학회지
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• 제9권1호
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• pp.42-47
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• 2000

The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

• 대한수학회논문집
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• 제16권4호
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• pp.621-626
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• 2001

Let { $A_{>o}$ t= exp(M log t)} $_{t}$ be a dilation group where M is a real n$\times$n matrix whose eigenvalues has strictly positive real part, and let $\rho$be an $A_{t}$ -homogeneous distance function defined on ( $R^{n}$ ). Suppose that K is a function defined on ( $R^{n}$ ) such that /K(x)/$\leq$ (No Abstract.see full/text) for a decreasing function defined on (t) on R+ satisfying where wo(x)=│log│log (x)ll. For f$\in$ $L_{1}$ ( $R^{n}$ ), define f(x)=sup t>0 Kt*f(x)=t-v K(Al/tx) and v is the trace of M. Then we show that \ulcorner is a bounded operator of $L_{-{1}( $R^{n}$ ) into $L^1$,$\infty$( $R^{n}$).

• Journal of Microbiology and Biotechnology
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• 제28권6호
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• pp.987-996
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• 2018

Bacterial programmed cell death is regulated by the toxin-antitoxin (TA) system. YhaV (toxin) and Pr1F (antitoxin) have been recently identified as a type II TA system in Escherichia coli. YhaV homologs have conserved active residues within the C-terminus, and to characterize the function of this region, we purified native YhaV protein (without denaturing) and constructed YhaV proteins of varying lengths. Here, we report a new low-temperature method of purifying native YhaV, which is notable given the existing challenges of purifying this highly toxic protein. The secondary structures and thermostability of the purified native protein were characterized and no significant structural destruction was observed, suggesting that the observed inhibition of cell growth in vivo was not the result of structural protein damage. However, it has been reported that excessive levels of protein expression may result in protein misfolding and changes in cell growth and mRNA stability. To exclude this possibility, we used an [$^{35}S$]-methionine prokaryotic cell-free protein synthesis system in vitro in the presence of purified YhaV, and two C-terminal truncated forms of this protein (YhaV-L and YhaV-S). Our results suggest that the YhaV C-terminal region is essential for mRNA interferase activity, and the W143 or H154 residues may play an analogous role to Y87 of RelE.

• 센서학회지
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• 제3권2호
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• pp.11-15
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• 1994

LiF(Mg,Cu,Na,Si)형광체의 ${\gamma}$ 선과 ${\beta}$ 선에 대한 TSEE 특성을 조사하였다. 이 형광체의 TSEE glow 곡선은 $20^{\circ}C$에서 $400^{\circ}C$사이에서 5개의 피크를 나타내었으며 주피크는 $240^{\circ}C$였다. $^{60}Co$ ${\gamma}$ 선에 대한 형광체의 감도는 약 450 counts/mR 이었다. ${\beta}$ 선에 대한 TSEE 에너지의존성은 ${\beta}$ 입자의 평균에너지 0.02MeV에서 0.8MeV 사이에서 ${\pm}10%$이었다. 그리고 이 형광체의 ${\beta}$ 선에 대한 TSEE 효율은 $(2{\sim}15){\times}10^{-3}$ 이었다.

• 대한전자공학회논문지SD
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• 제43권4호
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• pp.16-22
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• 2006

본 논문에서는 CMOS 공정을 사용하여 기가비트 이더넷 응용을 위한 전치증폭기 회로를 구현하였다 대역폭 확장 및 노이즈 성능개선을 위해, regulated cascade 설계기법을 사용하였고 이로써, 광다이오드 및 TIA 입력단의 큰 기생 캐패시턴스를 대역폭 결정으로부터 효과적으로 차단하였다. 0.6um CMOS공정을 사용하여 구현한 1.25Gb/s 전치증폭기의 칩 측정 결과 58dBohm의 트랜스 임피던스 이득, 0.5pF 기생 광다이오드 캐패시턴스에 대해 950MHz의 대역폭과 6.3pA/sqrt(Hz)의 평균 노이즈 전류 스펙트럼 밀도, 5V 단일 전원전압으로부터 85mW의 전력소모를 보였다. 또한, 0.18um CMOS 공정을 사용하여 설계한 10Gb/s 전치증폭기는 RGC 기법과 인덕티브 피킹기술을 동시에 사용함으로써, 59.4dBohm의 트랜스 임피던스 이득, 0.25pF 기생 캐패시턴스에 대해 8GHz의 대역폭, 20pA/sqrt(Hz)의 노이즈 전류 스펙트럼 밀도, 1.8V 단일전압에 대해 14mW의 전력소모를 보였다.

• Korean Chemical Engineering Research
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• 제47권1호
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• pp.11-16
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• 2009

단일벽 탄소나노튜브의 표면 위에 동력학적 전위법으로 산화루테늄($RuO_2$)의 석출 및 루테늄-코발트 혼합산화물(Ru-Co mixed oxide)의 공석출에 의해 산화환원 수퍼커페시터용 복합전극을 제조하였다. 루테늄 성분이 13.13 wt%, 코발트 성분이 2.89 wt%가 석출된 Ru-Co 혼합산화물 전극은 낮은 전위 스캔속도($10\;mV\;s^{-1}$)에서는 $RuO_2$ 전극과 유사한 비용량(${\sim}620\;F\;g^{-1}$)을 나타내지만, 높은 스캔속도($500\;mV\;s^{-1}$)에서는 $RuO_2$ 전극보다 큰 비용량을 보인다. 높은 스캔 속도에서 Ru-Co 혼합산화물 전극이 비용량의 증가를 나타내는 것은 Ru 성분을 통한 전기전도성을 Co 성분이 구조적으로 지지해주기 때문이다.