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Synthesis and Photovoltaic Properties of Copolymer Containing Fused Donor and Difluoroquinoxaline Moieties

  • Song, Suhee;Choi, Hyo Il;Shin, In Soo;Hyun, Myung Ho;Suh, Hongsuk;Park, Seong Soo;Park, Sung Heum;Jin, Youngeup
    • Bulletin of the Korean Chemical Society
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    • v.35 no.10
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    • pp.2963-2968
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    • 2014
  • We report synthesis and photovoltaic properties of two new conjugated copolymers, PCPDTQxF and PDTSQxF, with 6,7-difluoro-2,3-dihexylquinoxaline unit prepared by Stille coupling reaction. The advantage of 6,7-difluoro-2,3-dihexylquinoxaline based copolymer are high PCEs due to lower HOMO energy level, long wavelength absorption and high hole mobility. The solid films of PCPDTQxF and PDTSQxF showed absorption bands with maximum peaks at about 623 and 493 nm and the absorption onsets at 711 and 635 nm, corresponding to band gaps of 1.74 and 1.95 eV, respectively. The oxidation onsets of the PCPDTQxF and PDTSQxF polymers were estimated to be 0.68 and 0.95 V, which correspond to HOMO energy levels of -5.48 and -5.75 eV, respectively. The PDTSQxF has lower HOMO energy level as compared to PCPDTQxF to lead higher $V_{OC}$ value. The device comprising PCPDTQxF:PCBM (1:2) dissolved to a concentration of 1 wt % in ODCB showed $V_{OC}$ value of 0.62 V, $J_{SC}$ value of $1.14mA/cm^2$, and FF of 0.35, which yielded PCE of 0.25%.

POSITIVE SOLUTION FOR A CLASS OF NONLOCAL ELLIPTIC SYSTEM WITH MULTIPLE PARAMETERS AND SINGULAR WEIGHTS

  • AFROUZI, G.A.;ZAHMATKESH, H.
    • Journal of applied mathematics & informatics
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    • v.35 no.1_2
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    • pp.121-130
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    • 2017
  • This study is concerned with the existence of positive solution for the following nonlinear elliptic system $$\{-M_1(\int_{\Omega}{\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^pdx)div({\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^{p-2}{\nabla}u)\\{\hfill{120}}={\mid}x{\mid}^{-(a+1)p+c_1}\({\alpha}_1A_1(x)f(v)+{\beta}_1B_1(x)h(u)\),\;x{\in}{\Omega},\\-M_2(\int_{\Omega}{\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^qdx)div({\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^{q-2}{\nabla}v)\\{\hfill{120}}={\mid}x{\mid}^{-(b+1)q+c_2}\({\alpha}_2A_2(x)g(u)+{\beta}_2B_2(x)k(v)\),\;x{\in}{\Omega},\\{u=v=0,\;x{\in}{\partial}{\Omega},$$ where ${\Omega}$ is a bounded smooth domain of ${\mathbb{R}}^N$ with $0{\in}{\Omega}$, 1 < p, q < N, $0{\leq}a$ < $\frac{N-p}{p}$, $0{\leq}b$ < $\frac{N-q}{q}$ and ${\alpha}_i,{\beta}_i,c_i$ are positive parameters. Here $M_i,A_i,B_i,f,g,h,k$ are continuous functions and we discuss the existence of positive solution when they satisfy certain additional conditions. Our approach is based on the sub and super solutions method.

A 50-mA 1-nF Low-Voltage Low-Dropout Voltage Regulator for SoC Applications

  • Giustolisi, Gianluca;Palumbo, Gaetano;Spitale, Ester
    • ETRI Journal
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    • v.32 no.4
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    • pp.520-529
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    • 2010
  • In this paper, we present a low-voltage low-dropout voltage regulator (LDO) for a system-on-chip (SoC) application which, exploiting the multiplication of the Miller effect through the use of a current amplifier, is frequency compensated up to 1-nF capacitive load. The topology and the strategy adopted to design the LDO and the related compensation frequency network are described in detail. The LDO works with a supply voltage as low as 1.2 V and provides a maximum load current of 50 mA with a drop-out voltage of 200 mV: the total integrated compensation capacitance is about 40 pF. Measurement results as well as comparison with other SoC LDOs demonstrate the advantage of the proposed topology.

Fabrication and electrochemical characterization of amorphous vanadium oxide thin films for thin film micro-battery by reactive r.f. sputtering (반응성 r.f. 스퍼터링에 의한 마이크로 박막 전지용 산화바나듐 박막의 제작 및 전기화학적 특성 평가)

  • 전은정;신영화;남상철;윤영수;조원일
    • Journal of the Korean Vacuum Society
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    • v.9 no.1
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    • pp.42-47
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    • 2000
  • The amorphous vanadium oxide thin films for thin-film rechargeable lithium batteries were fabricated by r.f. reactive sputtering at room temperature. As the experimental parameter, oxygen partial pressure was varied during sputtering. At high oxygen partial pressures(>30%), the as-deposited films, constant current charge/discharge characteristics were carried out in 1M $LiPF_6$, EC:DMC+1:1 liquid electrolyte using lithium metal as anode. The specific capacity of amorphous $V_2O_5$ after 200cycles of operation at room temperature was higher compared to crystalline $V_2O_5$. The amorphous vanadium oxide thin film and crystalline film showed about 60$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$ and about 38$\mu$Ah/$\textrm{cm}^2\mu\textrm{m}$, respectively. These results suggest that the battery capacity of the thin film vanadium oxide cathode strongly depends on the crystallinity.

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CERTAIN MAXIMAL OPERATOR AND ITS WEAK TYPE $L^1$($R^n$)-ESTIMATE

  • Kim, Yong-Cheol
    • Communications of the Korean Mathematical Society
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    • v.16 no.4
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    • pp.621-626
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    • 2001
  • Let { $A_{>o}$ t= exp(M log t)} $_{t}$ be a dilation group where M is a real n$\times$n matrix whose eigenvalues has strictly positive real part, and let $\rho$be an $A_{t}$ -homogeneous distance function defined on ( $R^{n}$ ). Suppose that K is a function defined on ( $R^{n}$ ) such that /K(x)/$\leq$ (No Abstract.see full/text) for a decreasing function defined on (t) on R+ satisfying where wo(x)=│log│log (x)ll. For f$\in$ $L_{1}$ ( $R^{n}$ ), define f(x)=sup t>0 Kt*f(x)=t-v K(Al/tx) and v is the trace of M. Then we show that \ulcorner is a bounded operator of $L_{-{1}( $R^{n}$ ) into $L^1$,$\infty$( $R^{n}$).

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Functional Characterization of the C-Terminus of YhaV in the Escherichia coli PrlF-YhaV Toxin-Antitoxin System

  • Choi, Wonho;Yoon, Min-Ho;Park, Jung-Ho
    • Journal of Microbiology and Biotechnology
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    • v.28 no.6
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    • pp.987-996
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    • 2018
  • Bacterial programmed cell death is regulated by the toxin-antitoxin (TA) system. YhaV (toxin) and Pr1F (antitoxin) have been recently identified as a type II TA system in Escherichia coli. YhaV homologs have conserved active residues within the C-terminus, and to characterize the function of this region, we purified native YhaV protein (without denaturing) and constructed YhaV proteins of varying lengths. Here, we report a new low-temperature method of purifying native YhaV, which is notable given the existing challenges of purifying this highly toxic protein. The secondary structures and thermostability of the purified native protein were characterized and no significant structural destruction was observed, suggesting that the observed inhibition of cell growth in vivo was not the result of structural protein damage. However, it has been reported that excessive levels of protein expression may result in protein misfolding and changes in cell growth and mRNA stability. To exclude this possibility, we used an [$^{35}S$]-methionine prokaryotic cell-free protein synthesis system in vitro in the presence of purified YhaV, and two C-terminal truncated forms of this protein (YhaV-L and YhaV-S). Our results suggest that the YhaV C-terminal region is essential for mRNA interferase activity, and the W143 or H154 residues may play an analogous role to Y87 of RelE.

Thermally Stimulated Exoelectron Emission from LiF(Mg,Cu,Na,Si) Phosphor (LiF(Mg,Cu,Na,Si)형광체의 열자극엑소전자방출)

  • Doh, Sih-Hong;Jeong, Jung-Hyun;Aoki, M.;Nishikawa, T.;Tamagawa, Y.;Isobe, M.
    • Journal of Sensor Science and Technology
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    • v.3 no.2
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    • pp.11-15
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    • 1994
  • The TSEE characteristics of LiF(Mg,Cu,Na,Si)phosphor for gamma and beta rays are described. The TSEE glow curve of this phosphor showed 5 peaks in the range from $20^{\circ}C$ to $400^{\circ}C$ and its main peak appeared at $240^{\circ}C$. The sensitivity of the phospor for $^{60}Co$ gamma rays was about 450counts/mR. TSEE energy dependence for various beta radiation was nearly constant (${\pm}10%$) in the mean beta particle energy range from 0.02MeV to 0.8MeV. The efficiency of TSEE of the phosphor for beta radiation was $(2{\sim}15){\times}10^{-3}$.

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CMOS Transimpedance Amplifiers for Gigabit Ethernet Applications (기가비트 이더넷용 CMOS 전치증폭기 설계)

  • Park Sung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.4 s.346
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    • pp.16-22
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    • 2006
  • Gigabit transimpedance amplifiers are realihzed in submicron CMOS technologies for Gigabit Ethernet applications. The regulated cascode technique is exploited to enhance the bandwidth and noise performance simultaneously so that it can isolate the large input parasitic capacitance including photodiode capacitance from the determination of the bandwidth. The 1.25Gb/s TIA implemented in a 0.6um CMOS technology shows the measured results of 58dBohm transimpedance gain, 950MHz bandwidth for a 0.5pF photodiode capacitance, 6.3pA/sqrt(Hz) average noise current spectral density, and 85mW power dissipation from a single 5V supply. In addition, a 10Gb/s TIA is realized in a 0.18um CMOS incorporating the RGC input and the inductive peaking techniques. It provides 59.4dBohm transimpedance gain, 8GHz bandwidth for a 0.25pF photodiode capacitance, 20pA/sqrt(Hz) noise current spectral density, and 14mW power consumption for a single 1.8V supply.

Supercapacitive Properties of RuO2 and Ru-Co Mixed Oxide Deposited on Single-Walled Carbon Nanotube (단일벽 탄소나노튜브 상에 석출된 산화루테늄과 루테늄-코발트 혼합산화물의 수퍼커패시터 특성)

  • Ko, Jang Myoun;Kim, Kwang Man
    • Korean Chemical Engineering Research
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    • v.47 no.1
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    • pp.11-16
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    • 2009
  • Composite electrodes for redox supercapacitor were prepared potentiodynamically by the deposition of $RuO_2$ and the co-deposition of Ru-Co mixed oxide on the surface of single-walled carbon nanotube. Electrode of Ru-Co mixed oxide, in which Ru(13.13 wt%) and Co(2.89 wt%) were deposited on the carbon nanotube, exhibited a similar specific capacitance(${\sim}620\;F\;g^{-1}$) with $RuO_2$ electrode at a low potential scan rate($10\;mV\;s^{-1}$), but showed a superior one ($570\;F\;g^{-1}$) at a high scan rate($500\;mV\;s^{-1}$) than that of $RuO_2$($475\;F\;g^{-1}$). Such increase in the specific capacitance at high scan rate by the co-deposition of Ru and Co species was due to the structural support of Co species to provide the electronic conduction through Ru species.

Clinical Analysis of 102 Cases of Open Heart Surgery (개심수술 102례 의 임상적 고찰)

  • 김형묵
    • Journal of Chest Surgery
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    • v.14 no.3
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    • pp.235-240
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    • 1981
  • A total of 102 patients who had an Open Heart Surgery from April 1976 to July 1981 were reviewed. 55 paeitnts were congenital heart disease and 47 patients were acquired heart disease. Among SS patients of congenital heart disease, 18 T 0 F, 18 V S D, 8 A S D, and each one case of l\ulcorner 0 R V, Truncus arteriosus, Ebstein anomaly, Single ventricle, P D A, P 5, A S D + P 5, E C D, V 5 D + P D A, A - P window, D C R V were noted respectively. In 47 patients of acquired heart disease and one Ebstein patient, 46 prosthetic values were implanted: 17 had M V R, 4 had A V R, 2 had M V R + A V R, and 4 had M V R + T V R and one T V R. The operative mortality was 8.S% in acquired heart disease and 17% in congenital heart disease. The follow up period was between 6 months and 6 years. There were 3 cases of late mortality in acquired heart disease and one case in congenital heart disease.

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