• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.784-787
• /
• 2003

In this study, water jet etching of aqueous green tape was attempted for processing barrier rib of plasma display panel. This process combines 1) chemical etching between water and aqueous based binder in the tape and 2) mechanical erosion by water jet. Effects of etching parameters such as pressure, temperature and aqueous binder content on the morphology of barrier ribs formed were investigated. The results demonstrated a possibility of processing barrier ribs by water jet etching.

• Textile Coloration and Finishing
• /
• v.6 no.3
• /
• pp.44-51
• /
• 1994

Wool and silk fabrics dyed with C.l. Acid Black 155 were subjected to sputter etching and exposed to a low temperature argon plasma. Color depth of shade of the fabrics increased considerably, but sputter etching was more effectively than argon low temperature plasma treatment. And measured for any significant chemical modification by ESCA (XPS). Sputter etching and argon low temperature plasma treatments incorporated oxygen atoms into the surface.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.4
• /
• pp.135-139
• /
• 2014

The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristics was applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etching method was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may be due to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a better efficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-ray diffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied by scanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were well independently separated in space and clearly showed their shape, was $410^{\circ}C$ and 25 min. The etch pits density obtained by molten KOH/NaOH wet chemical etching under optimum etching condition was around $2.45{\times}10^6cm^{-2}$, which is commercially an available materials.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.35 no.2
• /
• pp.216-224
• /
• 2008

The purpose of this study was to evaluate the effectiveness of fissurotomy and double application time of acidic primer of self-etching adhesive system of acid treatment on enamel surfaces for prevention of microleakage of pit and fissure sealants. The microleakage of pit and fissure sealants was evaluated by measuring the penetration depth of methylene blue solution. Specimens were divided by 4 groups according to the method of treatment. Group I: 35% phosphoric acid etching, 20 seconds. Group II: Priming with self-etching primer, 20 seconds. Group III: Priming with self-etching primer, 40 seconds. Group IV: Priming with self-etching primer, 20 seconds, after fissurotomy. The etched pattern produced on enamel was observed using a scanning electron microscope. Obtained data were analysed statistically using Kruscal-Wallis test followed by Mann-Whitney test for comparison of groups. The results are as follows: 1. Microleakage scores of group IV priming with self-etching primer 20 seconds after fissurotomy was the lowest. 2. Microleakage scores between group II and group III were not shown significant difference. 3. Enamel for 20 seconds etching with 35% phosphoric acid was observed the most effective etching pattern. And the etching pattern on the fissure enamel with self-etching adhesive 20 seconds after fissurotomy was more prominent than group II, III only using self-etching primer.

• Journal of the Korean Electrochemical Society
• /
• v.16 no.1
• /
• pp.1-8
• /
• 2013

This review article summarizes metal-assisted chemical etching (MAC etch or MACE), an anisotropic etching method for Si, and describes principles, main factors, and recent achievements in literature. In 1990, it was discovered that, with metal catalyst on surface and $H_2O_2$/HF as etchant, Si substrate can be etched anisotropically, in even in solution. In contrast to high-cost vacuum-based dry etching methods, MAC etch enables to fabricate a variety of high aspect ratio nanostructures through wet etching process.

• Electrical & Electronic Materials
• /
• v.9 no.3
• /
• pp.291-297
• /
• 1996

The surface properties of AI(Si, Cu) alloy film after plasma etching using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched AI(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxidized (partially chlorinated) states, copper shows Cu metallic states and Cu-Cl$_{x}$(x$_{x}$ (x$_{x}$ (1

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.19-20
• /
• 2006

Two methods that can reduce reflectance in solar cells are surface texturing and anti-reflection coating. Wet chemical etching is a typical method that surface texturing of multi-crystalline silicon. Wet chemical etching methods are the acid texturization of saw damage on the surface of multi-crystalline silicon or double-step chemical etching after KOH saw damage removal too. These methods of surface texturing are realized by chemical etching in acid solutions HF-$HNO_3$-$H_2O$. In this solutions we can reduce reflectance spectra by simple process etching of multi-crystalline silicon surface. We have obtained reflectance of 27.19% m 400~1100nm from acidic chemical etching after KOH saw damage removal. This result is about 7% less than just saw damage removal substrate. The surface morphology observed by microscope and scanning electron microscopy (SEM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.12
• /
• pp.1075-1079
• /
• 2005

The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.

• Proceedings of the KIEE Conference
• /
• 1995.11a
• /
• pp.338-341
• /
• 1995

The surface properties after plasma etching of Al(Si, Cu) solutions using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched Al(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxized (partially chlorinated) states, copper shows Cu metallic states and Cu-Clx(x$CuCl_x$ (x$CuCl_x$ (1

• Transactions on Electrical and Electronic Materials
• /
• v.2 no.2
• /
• pp.21-25
• /
• 2001

This paper presents the effect of pyrazine on tetramethylammonium hydroxide (TMAH):isopropyl alcohol (IPA) single-crystal silicon anisotropic etching properties. With the addition of IPA to TMAH solutions, etching characteristics are exhibited an improvement in flatness on the etching front and a reduction in undercutting, but the etch rate on (100) silicon is decreased. The (100) silicon etch rate is improved by the addition of pyrazine. An etch rate on (100) silicon of 0.8 ${\mu}{\textrm}{m}$/min, which is faster by 13% than a 20 wt.% solution of pure TMAH, is obtained using 20 wt.% TMAH: 0.5 g/100 ml pyrazine solutions, but the etch rate on (100) silicon is decreased when more pyrazine is added. With the addition of pyrazine to a 25 wt.% TMAH solution, variations in flatness on the etching front are not observed and the undercutting ratio is reduced by 30~50%. These results indicate that anisotropic etching technology using TMAH:IPA:pyrazine solutions provides a powerful and versatile method for realizing of microelectromechanical systems.