Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Surface properties of Al(Si, Cu) alloy film after plasma etching

Al(Si, Cu)합금막의 플라즈마 식각후 표면 특성

  • 구진근 (한국전자통신연구소 반도체연구단) ;
  • 김창일 (안양대학교 전기공학과) ;
  • 박형호 (연세대학교 세라믹공학과) ;
  • 권광호 (한서대학교 전자공학과) ;
  • 현영철 (한국전자통신연구소 반도체연구단) ;
  • 서경수 (한국전자통신연구소 반도체연구단) ;
  • 남기수 (한국전자통신연구소 반도체연구단)
  • Published : 1996.03.01
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Abstract

The surface properties of AI(Si, Cu) alloy film after plasma etching using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched AI(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxidized (partially chlorinated) states, copper shows Cu metallic states and Cu-Cl$_{x}$(x$_{x}$ (x$_{x}$ (1

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