• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.14-17
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• 1992

To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.80-81
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• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.343-343
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• 2011

ZnO has been introduced as one of the good candidates for next generation opto-electronics. Recently, ZnO is known to be suitable for the transparent electrode in organic solar cells and light emitting devices. The contact with n-type organic material has been studied due to the n-type properties of ZnO. However, the surface of ZnO has shown different electronic property with respect to its surface orientation. Therefore, it is presumed that there are differences in the interfacial electronic structures between organic materials and ZnO with different orientation. Therefore, it is required to classify the interfacial electronic structures according to the surface orientation of ZnO. In this study, we measured the interfacial electronic structures between the ZnO substrate having various orientations and a typical n-type organic material, tris-(8-hydroxyquinoline) aluminum (Alq3). In-situ x-ray and ultraviolet photoelectron spectroscopy measurements revealed the interfacial electronic structures. We found the changes in the electronic structures with respect to the orientation of ZnO substrate and it could be used to improve the contact between ZnO and Alq3.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.185-188
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• 2004

Phase transitions from the amorphous to crystalline states, and vice versa, of GST(GeSbTe) and AST(AsSbTe) thin films by applying electrical pulses have been studied. These materials can be used as nonvolatile memory devices. The thickness of ternary chalcogenide thin films is approximately 100 nm. Upper and lower electrodes were made of AI. I-V characteristics after impressing the variable pulses to GST and AST films. Tc(crystallization temperature) of AST system is lower than that of the GST system, so that the current pulse width of crystallization process can be decreased.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.241-243
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can be controlled by electrical or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. In this letter, the characteristics of phase transition in differential chalcogenide thin film are investigated. Al was used for the electrode as the thickness of 100, 300, 500 nm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.73-74
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• 2007

We fabricated strained-SOI(sSOI) n-/p-MOSFETs and investigated the electron/hole mobility characteristics. The subthreshold characteristics of sSOI MOSFETs were similar to those of conventional SOI MOSFET. However, The electron mobility of sSOI nMOSFETs was larger than that of the conventional SOI nMOSFETs. These mobility enhancement effects are attributed to the subband modulation of silicon conduction band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.11-12
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• 2007

The electrical characteristics of strained-SOI wafer were evaluated by using pseudo-MOSFET. The electrical characteristics of sSOI pseudo-MOSFET were superior to conventional SOI device. Moreover, the electrical characteristics were enhanced by forming gas anneal due to reduction of back interface trap density between substrate and buried oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.377-380
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. GeSbTe(GST), AsSbTe(AST), SeSbTe(SST) used to phase change materials by appling electrical pulses. Thickness of ternary chalcogenide thin films have about 100nm. Upper and lower electrode were made of Al. It is compared with I-V characteristics after impress the variable pulses.

• Polymer Science and Technology
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• v.21 no.6
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• pp.519-527
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• 2010

• Korean Circulation Journal
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• v.54 no.3
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• pp.158-159
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• 2024