• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.520-524
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• 1999

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator and display systems. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. In order to maximize even surface emission, various sieving processes are introduced. 150cd/m$^2$ luminance by various wave intensity are investigated in stable voltage and frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.824-827
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• 2000

Fabrication of InP-based photonic devices by dry etch Process is important for clear formation of waveguide mesa structure. We have developed more efficient etch process of the inductively coupled plasma (ICP) with low damages and less polymeric deposits for the InP-based photonic devices than the reactive ion etching (RIE) technique. We report the tendency of etch rate variation by the process parameters of the RF power, pressure, gas flow rate, and the gas mixing ratio. The surface roughness of InP-based waveguide structure was more improved by the light wet etching in the mixed solution of H$_2$SO$_4$:H$_2$O (1:1)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.831-834
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• 2000

Characteristics of organic light-emitting diodes(OLEDs) were studied with devices made by PECCP[poly(3,6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] Langmuir-Blodget(LB) films. The emissive organic material was synthesized and named PECCP, which has a strong electron donor group and an electron accepter group in main chain repeated unit. The LB technique was employed to investigate the identification of the recombination zone in the ITO/PECCP LB films/Alq$_3$/Al structure by varying the LB film thickness. PECCP was considered as an emissive layer and Alq$_3$was used as an electron-transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum, and EL spectrum of those devises.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.83-84
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• 2006

ITO/4, 4', 4"-tris (N -3 - methylphenyl - N - phenyl - amino) - triphenylamine, [m-MTDATA] / Terbium Iris - (1 - phenyl - 3 - methyl - 4 - (tertiarybutyryl) - pyrazol - 5 - one) triphenylphosphine oxide [$(tb-PMP)_3Tb-(Ph_3PO)$] / Mg:Ag devices were made to investigate its electrical and light emission properties. The thickness of m-MTOATA layer was varied from 0 to 80 nm. There was a threshold thickness for the sufficient hole injection. The insertion of 20 nm thick m-MTDATA layer between ITO and Tb-complex resulted in the right shift of current-voltage curve because of the insufficient hole injection. The low operating voltage can be obtained above the 40 nm of m-MTDATA layer. The insertion of m-MTDATA induced the increase of the background in the electroluminescence spectrum which was dependent on the current density of the devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.512-513
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• 2005

We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene(C60) as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was 2.65% at illumination intensity $100mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.265-266
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• 2006

Superconductor is developed for applications in high-power devices such as power-transmission cables, transformers, motor and generators. In such applications, HTS tapes are subjected to various kinds of stress or strain. In the fabrication of the devices, the critical current (Ic) of the high temperature superconductor degrades due to many reasons including the tension applied by bending, twist and thermal contraction. In particular manufactured HTS cable, we need pitch angle controls. This paper is analyzed that Ic characteristics is changed pitch angle of HTS tape. These results will amount the most important basis data in HTS cable.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.227-233
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• 2011

The low efficiency of bulk thermoelectric materials has limited the widespread application of thermoelectric power generation. Theoretical and experimental investigations indicate that materials prepared in the form of nanowires show higher thermoelectric coefficients, thus promising to revolutionize the field. This article reviews the basics of thermoelectric power generation, conventional devices, the role of nanowires and the current status of the field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.523-526
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• 2016

This paper was researched about 1,200 V level floating island IGBT (insulated gate bipolar transistor). Presently, 1,200 V level IGBT is used in Inverter for distributed power generation. We analyzed and compared electrical charateristics of the proposed floating island IGBT and conventional IGBT. For analyzing and comparison, we used T-CAD tool and simulated the electrical charateristics of the devices. And we extracted optimal design and process parameter of the devices. As a result of experiments, we obtained 1,456 V and 1,459 V of breakdown voltages, respectively. And we obatined 4.06 V and 4.09 V of threshold voltages, respectively. On the other hand, on-state voltage drop of floating island IGBT was 3.75 V. but on-state vlotage drop of the conventional IGBT was 4.65 V. Therefore, we almost knew that the proposed floating island IGBT was superior than the conventional IGBT in terms of power dissipation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.207-208
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• 2007

Recently, high performance microelectronic devices are designed in multi-layer structure in order to make dense wiring of metal conductors in compact size. Imprint lithography have received significant attention due to an alternative technology for photolithography on such devices. In this work, we synthesized dielectric composite materials based on epoxy resin, and investigated their thermal stabilities and dynamic mechanical properties for thermal imprint lithography. In order to enhance the mechanical properties and toughness of dielectric material, various modified polyetherimide(PEI) was applied in the resin system. Curing behaviours, thermal stabilities, and dynamic mechanical properties of the dielectric materials cured with various conditions were studied using dynamic differential scanning calorimetry (DSC), thermo gravimetric analysis (TGA), and Universal Test Method (INSTRON).

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.94-95
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• 2005