Abstract
This paper was researched about 1,200 V level floating island IGBT (insulated gate bipolar transistor). Presently, 1,200 V level IGBT is used in Inverter for distributed power generation. We analyzed and compared electrical charateristics of the proposed floating island IGBT and conventional IGBT. For analyzing and comparison, we used T-CAD tool and simulated the electrical charateristics of the devices. And we extracted optimal design and process parameter of the devices. As a result of experiments, we obtained 1,456 V and 1,459 V of breakdown voltages, respectively. And we obatined 4.06 V and 4.09 V of threshold voltages, respectively. On the other hand, on-state voltage drop of floating island IGBT was 3.75 V. but on-state vlotage drop of the conventional IGBT was 4.65 V. Therefore, we almost knew that the proposed floating island IGBT was superior than the conventional IGBT in terms of power dissipation.
