DOI QR코드

DOI QR Code

Aging Effects on Electrical Characteristics of Sol-gel Processed CuO Thin Film Transistors

Aging 효과가 Sol-gel 공정 기반 CuO 박막 트랜지스터의 전기적 특성에 미치는 영향

  • Jang, Jaewon (School of Electronics Engineering, Kyungpook National University)
  • 장재원 (경북대학교 IT대학 전자공학부)
  • Received : 2016.04.12
  • Accepted : 2016.06.29
  • Published : 2016.09.01

Abstract

In this study, p-type thin film transistors consisting of CuO channels were fabricated by sol-gel process, with copper (II) acetate monohydrate precursors. At $500^{\circ}C$, the deposited films were fully converted into monoclinic phase CuO. The fabricated CuO thin film transistors deliver field effect mobility in saturation regime of $0.015cm^2/Vs$, and $I_{on}/I_{off}$ of ${\sim}10^3$. The degradation of the performance of the fabricated CuO thin film transistor caused by the exposure to air has been studied.

Keywords

References

  1. S. H. Park, K. A. Cho, H. G. Oh, and S. S. Kim J. Korean Inst. Electr. Electron. Mater. Eng., 29, 120 (2016). [DOI: http://dx.doi.org/10.4313/JKEM.2016.29.2.120]
  2. G. Adamopoulos, S. Thomas, P. H. Wobkenberg, D. D. C. Bradley, M. A. McLachlan, and T. D. Anthopoulos, Adv. Mater., 23, 1894 (2011). [DOI: http://dx.doi.org/10.1002/adma.201003935]
  3. J. Jang, R. Kitsomboonloha, S. L. Swisher, E. S. Park, H. Kang, and V. Subramanian, Adv. Mater., 25, 1042 (2013). [DOI: http://dx.doi.org/10.1002/adma.201202997]
  4. J. Jang, H. Kang, H.C.N. Chakravarthula, and V. Subramanian, Advanced Electronics Materials, 1 (2015). [DOI: ttp://dx.doi.org/10.1002/aelm.201500086]
  5. E. Fortin and F. L. Weichman, Can. J. Phy., 44, 1551 (1966). [DOI: http://dx.doi.org/10.1139/p66-128]
  6. B. Balamurugan and B. R. Mehta, Thin Solid Films, 396, 90 (2001). [DOI: http://dx.doi.org/10.1016/S0040-6090(01)01216-0]
  7. J. H. Park and K. Natesan, Oxid. Met., 39, 411 (1993). [DOI: http://dx.doi.org/10.1007/BF00664664]
  8. Z. Zang, A. Nakamura, and J. Temmyo, Mater. Lett., 92, 188 (2013). [DOI: http://dx.doi.org/10.1016/j.matlet.2012.10.083]
  9. K. Matsuzaki, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Phys. Status Solidi A, 206, 2192 (2009). [DOI: http://dx.doi.org/10.1002/pssa.200881795]
  10. B. S. Ong, C. Li, Y. Li, Y. Wu, and R. J. Loutfy, J. Am. Chem. Soc., 129, 2750 (2008). [DOI: http://dx.doi.org/10.1021/ja068876e]
  11. J. Jang, S. Chung, H. Kang, and V. Subramanian, Thin Solid Films, 600, 157 (2016). [DOI: http://dx.doi.org/10.1016/j.tsf.2016.01.036]
  12. C. Wang, X. Q. Fu, X. Y. Xue, Y. G. Wang, and T. H. Wang, Nanotechnology, 17, 145506 (2007). [DOI: http://dx.doi.org/10.1088/0957-4484/18/14/145506]
  13. H. T. Hsueh, T. H. Hsueh, S. J. Chang, F. Y. Hung, T. Y. Tasi, W. Y. Weng, C. L. Hsu, and B. T. Dai, Sens, Actuators B, 156, 906 (2011). [DOI: http://dx.doi.org/10.1016/j.snb.2011.03.004]