• Title/Summary/Keyword: Electronic devices

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A Study on Hand Speed Constant to Calculate Safe Distance of Press Protective Device (프레스 방호장치 안전거리 산정을 위한 손속도상수)

  • Lee, Keun-Oh;Kim, Jong-Hyun
    • Journal of the Korean Society of Safety
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    • v.25 no.6
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    • pp.40-46
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    • 2010
  • To protect press operator from the after-reach hazard, current Ministry of Labor Notification(MOLN) requires the use of a formula for calculating the safe distance away from the point of operation for locating press protective devices, Two Hand Control Devices(THCD) and Active Opto-Electronic Protective Devices(AOPD), on a power press. This formula is based on a same hand speed constant of 160cm/s. While EN standards use different hand speed constant for THCD and AOPD respectively. The objective of this study is to compare two guidelines on the hand speed constant published by MOLN and EN 692, also to propose a proper hand speed constant and validate it experimentally. As a experimental result, it could be known that hand speed constant of Ministry of Labor Notification should be improved as that of EN standards.

Physical issues for the next generation of nano devices (차세대 나노소자에서의 물리적 논점)

  • Cho, Mann-Ho
    • Vacuum Magazine
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    • v.1 no.3
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    • pp.21-27
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    • 2014
  • Advanced process and integration for future semiconductor devices is approaching the physical limit. The new materials with low dimensional structure have recently attracted great attention due to its expandability for the future electronic devices. In order to apply the materials to future semiconductor devices, the control of carrier scattering is critical issue. That is, the carrier scattering with physical quantity in low dimensional structure significantly modulates the device characteristics. We introduce the role of defect in several future semiconductor materials and devices. The analysis of defect in the structure becomes the most important techniques. In particular, surface defect in nano structures totally controls the device characteristics. The changes imply that the metrology field is leading the future industry for semiconductor.

DESIGNIN AND OPERATION OF DIGITAL EVIDENCE MANAGEMENT SYSTEM APPLYING COMPUTER FORENSICS AND ELECTRONIC CERTIFICATION (전자증거 관리시스템의 설계)

  • 김종섭;하옥현;김귀남
    • Proceedings of the Safety Management and Science Conference
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    • 2001.05a
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    • pp.275-280
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    • 2001
  • DESIGNIN AND OPERATION OF DIGITAL EVIDENCE MANAGEMENT SYSTEM APPLYING COMPUTER FORENSICS AND ELECTRONIC CERTIFICATION Digital evidence will be used as a term, which means the electronic form of information which is necessary to confirm or prove the factum of all kinds of behaviors committed through the devices which have data processing ability including computer. It is expected that there will be the increase of legal conflicts surrounding electronic commerce activities as well as the increase of cyber crimes, as the number of Internet users are getting bigger. In order to solve the problems of conflicts derived from electronic commerce, the factum of electronic commerce activities must be confirmed. In order to confirm the factum of electronic commerce activities, the evidence is prerequisite. Almost all evidences relating to the electronic commerce activities exist in digital form. For the reason that the digital evidence can be easily damaged and changed, special management is required to collect, analyze, and preserve the digital evidence. In order to meet this requirement, this study proposes a basic model of digital evidence management system applying computer forensics and electronic authentication.

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Flash Translation Layer for Heterogeneous NAND Flash-based Storage Devices Based on Access Patterns of Logical Blocks (논리 블록의 접근경향을 활용한 이종 낸드 플래시 기반 저장장치를 위한 Flash Translation Layer)

  • Bang, Kwanhu;Park, Sang-Hoon;Lee, Hyuk-Jun;Chung, Eui-Young
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.5
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    • pp.94-101
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    • 2013
  • The market for NAND flash-based storage devices has grown significantly as they rapidly replace traditional disk-based storage devices. Heterogeneous NAND flash-based storage devices using both multi-level cell (MLC) and single-level cell (SLC) NAND flash memories are also actively researched since both types of memories complement each other. Heterogeneous NAND flash-based storage devices suffer from the overheads incurred by migration from SLC to MLC and garbage collection of SLC. This paper proposes a new flash translation layer (FTL) for heterogeneous NAND flash-based storage devices to reduce the overheads by utilizing SLC efficiently. The proposed FTL analyzes the access patterns of logical blocks and selects and stores only logical blocks expected to bring performance improvement in SLC. The experimental results show that the total execution time of heterogeneous NAND flash-based storage devices with our proposed FTL scheme is 35% shorter than that with the previously proposed best FTL scheme.

Inorganic and Organic Nano Materials and Devices

  • Li, G.P.;Bachman, Mark
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.4.1-4.1
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    • 2009
  • The dream of futurists andtechnologists is to build complex, multifunctional machines so small that theycan only be seen with the aid of a microscope. The unprecedented technologyadvancements in miniaturizing integrated circuits on semiconductors, and theresulting plethora of sophisticated, low cost electronic devices demonstratethe impact that micro/nano scale engineering can have when applied only to thearea of electrical and computer engineering. Emerging research efforts indeveloping organic and inorganic nano materials together with using micro/nanofabrication techniques for implementing integrated multifunctional devices hopeto yield similar revolutions in other engineering fields. By cross linking theindividual engineering fields through micro/nano technology, various organicand inorganic materials and miniaturized system devices can be developed thatwill have future impacts in the IT and life science applications. Yet to buildthe complex micromachines and nanomachine of the future, engineering will needto develop the technology capable of seamlessly integrating these materials andsubsystems together at the micro and nano scales. The micromachines of thefuture will be “integrated nanosystems,” complex devices requiring the integration of multiple materials,phenomena, technologies, and functions at the same platform. To develop thistechnology will require great efforts in materials science and engineering, infundamental and applied sciences. In this talk, we will first discuss thenature of micro and nanotechnology research for IT and life sciences, and thenintroduce selected current activities in micro and nanotechnology research fororganic and inorganic materials and devices. The newly developed micro/nanofabrication processes and devices, combined with in-depth scientificunderstandings of materials, can lead to rapid development of next generationsystems for applications in IT and life sciences.

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Technical Trend of Fusion Semiconductor Devices Composed of Silicon and Compound Materials (실리콘-화합물 융합 반도체 소자 기술동향)

  • Lee, S.H.;Chang, S.J.;Lim, J.W.;Baek, Y.S.
    • Electronics and Telecommunications Trends
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    • v.32 no.6
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    • pp.8-16
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    • 2017
  • In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.

Quantum Dot Optoelectronic Devices

  • P., Lever;K., Stewart;Q., Gao;L., Fu;J., Wong-Leung;M., Buda;H.H., Tan;C., Jagadish
    • Proceedings of the Optical Society of Korea Conference
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    • 2004.07a
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    • pp.4-5
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    • 2004
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단결정 태양전지의 시정수

  • Jeong, Yu-Ra;Choe, Yong-Seong;Lee, Gyeong-Seop
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03b
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    • pp.11-11
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    • 2010
  • Recently, annual usage of energy is dramatically increasing by industrialization is going faster and more electricity is needed due to various electronic devices. This paper present relationships between the Vmax, $V_T$, load and time constant of solar cell charge and discharge curve. Charging and discharging recording where the external resistance will become larger Vmax, $V_T$ is decrease and the time increases and decreases there is a possibility of knowing.

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Tilt Sensor based Remote Controller for Mobile Devices (자율이동 장치를 위한 기울기 센서 기반 무선 조종장치)

  • Park, Taejin;Chung, Soon-Beom;Lee, Eun-Jae
    • Proceedings of the KIEE Conference
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    • 2015.07a
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    • pp.117-118
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    • 2015
  • 본 논문은 학생 캡스톤디자인 작품제작의 결과를 정리한 것으로 기울기센서와 블루투스 통신모듈을 이용하여 기울기에 따라 자율이동 장치를 직관적으로 조종할 수 있는 무선 조정장치의 구현방법에 대해 소개한다. 본 조종장치를 이용하면 기울기를 이용해 누구나 별도의 학습과정 없이 직관적으로 이동장치를 조종할 수 있다.

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