Proceedings of the Korean Magnestics Society Conference (한국자기학회:학술대회 개요집)
- 2003.12a
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- Pages.84-84
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- 2003
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- 2233-9485(pISSN)
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- 2233-9574(eISSN)
Development of Exchange Bias in $IrMn_3$ Based Magnetic Tunnel Junctions
- Sankaranarayanan V.K. (Department of Materials Engineering, Chungnam National University, Microstructure Devices Group, Electronic Materials Division, National Physical Laboratory) ;
- Hu Yongkang (Department of Materials Engineering, Chungnam National University) ;
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Kim Cheol Gi
(Department of Materials Engineering, Chungnam National University) ;
- Kim Chong-Oh (Department of Materials Engineering, Chungnam National University) ;
- Tsunoda M. (Department of Electronic Engineering, Graduate School of Engineering, Tohoku University) ;
- Takahashi M. (Department of Electronic Engineering, Graduate School of Engineering, Tohoku University)
- Published : 2003.12.01
Abstract
Keywords