• Journal of Power Electronics
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• 제17권4호
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• pp.1097-1108
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• 2017

Accurate calculation of the conduction and switching losses of a power electronic converter is required to achieve the efficiency of the converter. Such calculation is also useful for computing the junction temperature of the switches. A few models have been developed in the articles for calculating the switching energy losses during switching transitions for the given values of switched voltage and switched current. In this study, these models are comprehensively reviewed and investigated for the first time for ease of comparison among them. These models are used for calculating the average amount of switching power losses. However, some points and details should be considered in utilizing these models when switched current or switched voltage presents time-variant and alternative quantity. Therefore, an applicable technique is proposed in details to use these models under the above-mentioned conditions. A proper switching loss model and the presented technique are used to establish a new and fast method for obtaining the average switching power losses in any type of power electronic converters. The accuracy of the proposed method is evaluated by comprehensive simulation studies and experimental results.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집D
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• pp.390-395
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• 2001

Cooling characteristics using convection and conduction heat transfer in a parallel channel with extruding heat sources are studied numerically. A two-dimensional model has been developed for numerical prediction of transient, compressible, viscous, laminar flow, and conjugate heat transfer between parallel plates with uniform block heat sources. The finite volume method is used to solve this problem. The considered assembly consists of two channels formed by two covers and one PCB which has three uniform heat source blocks. Five different cooling methods are considered to find efficient cooling method in a given geometry and heat source. The velocity and temperature fields, local temperature distribution along surface of blocks, and the maximum temperature in each block are obtained.

• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.143-145
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• 2009

The electrical and photovoltaic properties of single junction silicon quantum dot solar cells are investigated. A prototype solar cell with an effective area of 4.7 $mm^2$ showed an open circuit voltage of 394 mV and short circuit current density of 0.062 $mA/cm^2$. A diode model with series and shunt resistances has been applied to characterize the dark current-voltage data. The photocurrent of the quantum-dot solar cell was found to be strongly dependent on the applied voltage bias, which can be understood by consideration of the conduction mechanism of the activated carriers in the quantum dot imbedded material.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.525-532
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• 2001

In this paper, physical properties and electrical characteristics of linear low density polyethylene(LLDPE) films blended with ethylene vinyl acetate(EVA), containing polar groups within it, were investigated to improve defects of polyethylene(PE) such like space charge accumulation and tree growth. Blending method changes super-structure of LLDPE, having a great influence on electrical characteristics. For analysis of physical properties, FTIR, XRD and DSC methods were executed, and for electrical characteristics, volume resistivity and dielectric strength were measured with the varying temperature. From the results, it is confirmed that bled specimens tend to be safe to varying temperature, and specially of 70:30 and 50:50 have a good performance.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.61.1-61
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• 2003

Stoichiometric, uniform, amorphous ZrO$_2$ films with an equivalent oxide thickness of ∼1.5nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential application in meta-oxide-semiconductor(MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. the MOS devices showed low leakage current, small hysteresis(〈50mV), and low interface state density(∼2*10e11/cm2eV). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of ${\alpha}$-ZrO$_2$ and an amorphous interfacial ZrSi$\_$x/O$\_$y/ layer which has a correspondign dielectric constant of 11

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.115-119
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• 1995

Electrical conduction characteristics of Polyethylene/Ethylene vinyl acetate blends of varing vinyl acetate content(1% and 4%) were investigated at electric fields ranging from 10$\^$6/ to 10.$\^$8/ V/cm over the temperature range of 30 and 85$^{\circ}C$. It was obser-ved that the extent of current density was changed at the blends and the rate of change of current den-sity was slightly suppressed at high field range, but PE and EVA were not shown. The change of con-duction characteristics and a suppression in rate of change of current density were attributed to the VA content in PE.EVA blends.

• IEIE Transactions on Smart Processing and Computing
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• 제4권5호
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• pp.318-323
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• 2015

We present a new way to create a thermally stable, highly strained germanium (Ge) optical resonator using a novel Ge-on-dual-insulators substrate. Instead of using a conventional way to undercut the oxide layer of a Ge-on-single-insulator substrate for inducing tensile strain in germanium, we use thin aluminum oxide as a sacrificial layer. By eliminating the air gap underneath the active germanium layer, we achieve an optically insulating, thermally conductive, and highly strained Ge resonator structure that is critical for a practical germanium laser. Using Raman spectroscopy and photoluminescence experiments, we prove that the novel geometry of our Ge resonator structure provides a significant improvement in thermal stability while maintaining good optical confinement.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1014-1017
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• 2009

In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.252-256
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• 2016

This paper deals the study of a linear MHD pump solution used to eliminate and to avoid the dangers of the mercury appearing through pollution and contamination. The formulation of the magnetohydrodynamic phenomena is derived from Maxwell and Navier-Stokes equations are solved using the finite volume method. Simulation results highlight the performance of the pump such as the electromagnetic force, the velocity, and the pressure, the application of Ansys-Fluent software validation these results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.67-70
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• 1995

Amorpous As$\sub$10/Ge$\sub$15/Te$\sub$75/ device shows the memory switching characterisite under d.c. bias. In bulk material, a-As$\sub$10/Ge/sub15/Te$\sub$75/s switching voltage range is above 100 volts. Our purposes in this gaudy are decreasing a switching threshold voltage, finding the properties of d.c., a.c. conduction, and the characterisitics of switching threshold voltage fur a-As$\sub$10/Ge$\sub$15/Te$\sub$75/. As the results, the d.c.and a.c. conductivities increase with temperature. From the data of conductivity, various electrical and physical properties are obtained experimentally. The switching threshold voltages decrease with increasing annealing temperature and time, but increase with increasing film thickness and distance of electrode for d.c. bias.