• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.1-12
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• 2001

The adaptive learning circuit is designed on the basis of modeling of MFSFET (Metal-Ferroelectric-Semiconductor FET) and the numerical results are analyzed. The output frequency of the adaptive learning circuit is inversely proportional to the source-drain resistance of MFSFET and the capacitance of the circuit. The saturated drain current with input pulse number is analogous to the ferroelectric polarization reversal. It indicates that the ferroelectric polarization plays an important role in the drain current control of MFSFET. The output frequency modulation of the adaptive learning circuit is investigated by analyzing the source-drain resistance of MFSFET as functions of input pulse numbers in the adaptive learning circuit and the dimensionality factor of the ferroelectric thin film. From the results, the frequency modulation characteristic of the adaptive learning circuit are confirmed. In other words, adaptive learning characteristics which means a gradual frequency change of output pulse with the progress of input pulse are confirmed. Consequently it is shown that our circuit can be used effectively in the neuron synapses of nueral networks.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.3
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• pp.529-536
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• 2019

In order to apply a piezoelectric energy harvester to a smart sensor system, an energy harvest interface circuit including an AC-DC rectifier is required. In this paper, we compared the performance of full bridge rectifier, which is a typical energy harvester interface circuit, and synchronous piezoelectric energy harvest interface circuit by using board-level simulation. As a result, the output power of a synchronous electric charge extraction(: SECE) circuit is about four times larger than that of the full bridge rectifier, and there is little load variation. And a high voltage comparator, which is essential for the SECE circuit for the piezoelectric energy harvester with an output voltage of 40V or more, was designed using 0.35 um BCD process. The SECE circuit using the designed high-voltage comparator proved that the output power is 427 % higher than the FBR circuit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.667-670
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• 2010

In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 ${\mu}m$ BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.105-105
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• 2010

Voltage circuit breakers are widely used in power distribution systems to interrupt fault current rapidly and to assure the reliability of the power supply. Power distribution system requires the transformer with higher capacity than ever, but this ever, but this may be the cause. of the increasing of short circuit current in contrast to conventional one when short-circuit accident is occurred. Therefore molded case circuit breaker improved in aspects of interrupting capacity of short circuit current in this system is needed. By using the proposed methods in this paper, such as new arc quenching structure of grid would contribute to minimizing the MCCB, realization of high interrupting performance and reducing the design time and development cost.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.983-989
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• 2015

Power transformer is one of the major and key apparatus in electric power system. Monitoring and diagnosis of transformer fault is necessary for improving the life period of transformer. The failures caused by short circuits are one of the causes of transformer outages. The short circuit currents induce excessive forces in the transformer windings which result in winding deformation affecting the mechanical and electrical characteristics of the winding. In the present work, a transformer producing only the radial flux under short circuit is considered. The corresponding axial displacement profile of the windings is computed using Finite Element Method based transient structural analysis and thus obtained displacements are compared with the experimental result. The change in inter disc capacitance and mutual inductance of the deformed windings due to different short circuit currents are computed using Finite Element Method based field analyses and the corresponding Sweep Frequency Responses are computed using the modified electrical equivalent circuit. From the change in the first resonant frequency, the winding movement can be quantified which will be useful for estimating the mechanical withstand capability of the winding for different short circuit currents in the design stage itself.

• Journal of electromagnetic engineering and science
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• v.4 no.1
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• pp.30-36
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• 2004

We determined equivalent circuit parameters of a 1.5 cell S-band RF gun cavity from the resonant characteristics of its decoupled cavities(half cell and full cell) using the code SUPERFISH. Equivalent circuit parameters of the 1.5 cell RF gun cavity resonated in the 0-mode were obtained easily from the circuit parameters of each decoupled cavities. In order to obtain equivalent circuit parameters for the $\pi$ -mode cavity, we calculated the differences of the resonant frequencies and the equivalent resistances between the 0- and $\pi$ -modes with slight variations of the radius and thickness of the coupling iris. From those differences, we obtained R/Q value and equivalent resistance of the $\pi$ -mode, which are directly related to the equivalent circuit parameters of the coupled cavity. Using calculated R/Q value, we can express equivalent inductance, capacitance and resistances of the RF gun cavity resonated in the $\pi$ -mode, which can be useful for analyzing coupled cavities in a steady state.

• Journal of the Korean Institute of Intelligent Systems
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• v.26 no.4
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• pp.273-278
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• 2016

In this paper, chaotic circuit of the Lorentz system using multipliers, operational amplifiers, capacitor, fixed resistor and variable resistor for control has been designed in a electronic circuit. Through PSPICE program, electrical characteristics such as time waveforms, frequency spectra and phase attractors analyzed. And in the special area ($10{\sim}100k{\Omega}$) of the $500k{\Omega}$ control variable resistor, the circuit showed chaotic dynamics. Also, we implemented the circuit in a electronic hardware system with discrete elements. Measured results of the circuit coincided with simulated data.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.3 no.1
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• pp.3-7
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• 2010

In this study, we developed a circuit device detecting korotkoff sounds of forearm electronic blood pressure monitor by digital signal. In order to test a circuit detecting signal from korotkoff sounds, systolic and diastolic pressure were compared our developed circuit device with the existing forearm electronic blood pressure monitor (Model: SE-7000, Korea). Devices for an experiment composed of a forearm cuff, a stethoscope, an amplifier, a PC with A/D board, etc. Results of korotkoff sounds was similar to a pattern of oscilometric signals from the existing forearm electronic blood pressure monitor. We thought it is possible to measure blood pressures, if blood pressures were detected precisely using signals of korotkoff sounds.

• ETRI Journal
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• v.27 no.5
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• pp.539-544
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• 2005

An analog CMOS vision chip for edge detection with power consumption below 20mW was designed by adopting electronic switches. An electronic switch separates the edge detection circuit into two parts; one is a logarithmic compression photocircuit, the other is a signal processing circuit for edge detection. The electronic switch controls the connection between the two circuits. When the electronic switch is OFF, it can intercept the current flow through the signal processing circuit and restrict the magnitude of the current flow below several hundred nA. The estimated power consumption of the chip, with $128{\times}128$ pixels, was below 20mW. The vision chip was designed using $0.25{\mu}m$ 1-poly 5-metal standard full custom CMOS process technology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.99-106
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• 2012

For CMOS technology of 65 nm and beyond, the gate leakage current can not be negligible anymore. In this paper, the impact of the gate leakage current in ring voltage-controlled oscillator (VCO) on phase-locked loop (PLL) is analyzed and modeled. A voltage -to-voltage (V-to-V) circuit is proposed to reduce the voltage ripple on $V_{ctrl}$ induced by the gate leakage current. The side effects induced by the V-to-V circuit are described and optimized either. The PLL design is based on a standard 65 nm CMOS technology with a 1.8 V power supply. Simulation results show that 97 % ripple voltage is smoothed at 216 MHz output frequency. The RMS and peak-to-peak jitter are 3 ps and 14.8 ps, respectively.