• 정보저장시스템학회논문집
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• 제1권2호
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• pp.127-131
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• 2005

We report a nanometer scale mark formation using a $PtO_x$ thin film or a TbFeCo rare-earth transition metal film and the mechanism. The multi-layer samples($ZnS-SiO_2/PtOx/ZNS-SiO_2,\;ZnS-SiO_2/TbFeCo/ZnS-SiO_2$) were prepared with a magnetron sputtering method on a polycarbonate or a glass substrate. By laser irradiation of approximately a few nanoseconds, nanometer scale marks were fabricated. During the fabrication process, the thin films were thermally reacted or inter-diffused during the laser irradiation. 75 nm bubble marks in the PtOx multi-layer sample by an approximately 4-ns laser irradiation. Inside the bubble mark, Pt particles with a few nanometer sizes are distributed. The $50{\sim}100$ nm bubble marks in the TbFeCo multi-layer sample by a few nanosecond laser irradiations. We will report the detail structure of the samples, the bubble mark formation process and the mechanism.

• 전기화학회지
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• 제10권1호
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• pp.1-6
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• 2007

금 나노 입자를 회합시킨 흑연전극 표면에 mercaptopropionic acid(mpa)를 사용하여 자기조립 단층막(self-assembled monolayer: SAMs)을 생성시키고 이어서 도파민(dopa)과의 짝지움 반응을 통하여 Gr(Au)/mpa-dopa형의 수식된 전극을 제작하여 NADH의 전기촉매 산화반응에 적용하였다. 이 수식 전극이 전자전달반응속도와 반응과정에 대하여 연구하였다. 전극 표면에 고정된 도파민이 NADH와 이차반응 속도상수는 회전 전극법으로 0.1 M 인산염 완충용액(pH=7.0)에서 결정하였으며 그 값이 $5.06{\times}10^5M^{-1}s^{-1}$였고, $EC_{cat}$ 및 전자전달이 지배적인 과정이었다. 그러나 반응초기 즉, $10^{-3}s$ 이내에서는 이 전극에서 확산에 영향을 받으며 그 때 확산계수는 $4.64{\times}10^{-4}cm^2s^{-1}$이다.

• 대한화학회지
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• 제39권1호
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• pp.47-56
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• 1995

세자리 Schiff base의 몰리브네늄(V) 착물로써 $[Mo(Ⅴ)_2O(SOHB)_4],\; [Mo(Ⅴ)_2O_3(SOIP)_2(NCS)_2]$ 및 $ [Mo(Ⅴ)_2O_3(SOTB)_2(H_20)_2]$ (SOHB: Salicylidene-o-imino hydroxybenzene, SOIP; Salicylidene-o-imino pyridine, SOTB; Salicylidene-o-imino thiolbenzene)들을 합성하였다. 이들 착물들의 원소분석과 금속정량, IR, UV-visible spectrum 및 열무게분석(TGA)으로부터 금속과 리간드의 몰비가 1:1 및 1:2 착물임을 확인하였다. 0.1 M tetraethylammonium perchlorate (TEAP) 지지전해질을 포함한 비수용매에서 순환 전압-전류법과 시차펄스 폴라로그래피에 의한 전기화학적 측정으로부터 이들 착물들은 일전자 전이의 확산지배적인 환원과정이 다음과 같이 진행됨을 알았다. Mo(Ⅴ)Mo(Ⅴ)e-→ Mo(Ⅴ)Mo(Ⅳ)e-→Mo(Ⅳ)Mo(Ⅳ)e-→Mo(Ⅳ)Mo(Ⅲ).

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.357-364
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• 2014

Size controlled, $LiNi_{0.8}Co_{0.15}Al_{0.05}O_2$ cathode powders were prepared by co-precipitation method followed by heat treatment at temperatures between 750 and $850^{\circ}C$. The synthesized samples are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical performance. The synthesized $LiNi_{0.8}Co_{0.15}Al_{0.05}O_2$ after calcined at $750^{\circ}C$ has a good electrochemical performance with an initial discharge capacity of $190mAhg^{-1}$ and good capacity retention of 100% after 30 cycles at 0.1C ($17mAg^{-1}$). The capacity retention of $LiNi_{0.8}Co_{0.15}Al_{0.05}O_2$ after calcined at $750^{\circ}C$ is better than that at 800 and $850^{\circ}C$ without capacity loss at various high C rates. This is ascribed to the minimized cation disorder, a higher conductivity, and higher lithium ion diffusion coefficient ($D_{Li}$) observed in this material. In the differential scanning calorimetry DSC profile of the charged sample, the generation of heat by exothermic reaction was decreased by calcined at high temperature, and this decrease is especially at $850^{\circ}C$. This behavior implies that the high temperature calcinations of $LiNi_{0.8}Co_{0.15}Al_{0.05}O_2$ prevent phase transitions with the release of oxygen.

• 한국재료학회지
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• 제12권3호
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• pp.211-214
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• 2002

Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.34-39
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• 2011

Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.

• 한국분말재료학회지
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• 제20권3호
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• pp.186-190
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• 2013

The electrochemical performance for the corrosion of zinc anodes according to particle size and shape as anode in Zn/air batteries was study. We prepared five samples of Zn powder with different particle size and morphology. For analysis the particle size of theme, we measured particle size analysis (PSA). As the result, sample (e) had smaller particle size with $10.334{\mu}m$ than others. For measuring the electrochemical performance of them, we measured the cyclic voltammetry and linear polarization in three electrode system (half-cell). For measuring the morphology change of them before and after cyclic voltammetry, we measured Field Emission Scanning Electron Microscope (FE-SEM). From the cyclic voltammetry, as the zinc powder had small size, we knew that it had large diffusion coefficient. From the linear polarization, as the zinc powder had small size, it was a good state with high polarization resistance as anode in Zn/air batteries. From the SEM images, the particle size had increased due to the dendrite formation after cyclic voltammetry. Therefore, the sample (e) with small size would have the best electrochemical performance between these samples.

• Journal of Microbiology and Biotechnology
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• 제24권7호
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• pp.905-913
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• 2014

Lj-RGD3, an RGD (Arg-Gly-Asp) toxin protein from the salivary gland of Lampetra japonica, exhibits antifungal activity against Candida albicans. Lj-RGD3 has three RGD motifs and shows homology to histidine-rich glycoprotein. We synthesised two mutant derivatives of Lj-RGD3: Lj-26, which lacks all three RGD motifs and contains no His residues; and Lj-112, which lacks only the three RGD motifs. We investigated the effects of the wild-type and mutated toxins on a gram-positive bacterium (Escherichia coli), a gram-negative bacterium (Staphylococcus aureus), and a fungus (C. albicans). rLj-RGD3 and its mutants exhibited antifungal but not antibacterial activity, as measured by a radial diffusion assay. The C. albicans inhibition zone induced by rLj-112 was larger than that induced by the other proteins, and its inhibitory effect on C. albicans was dose-dependent. In viable-count assays, the rLj-112 MIC was $7.7{\mu}M$, whereas the MIC of the positive control (ketoconazole) was $15{\mu}M$. Time-kill kinetics demonstrated that rLj-112 effectively killed C. albicans at $1{\times}$ and $2{\times}$ MIC within 12 and 6 h, respectively. Electron microscopy analysis showed that rLj-RGD3 and rLj-112 induced C. albicans lysis. Our results demonstrate a novel anticandidal activity for rLj-RGD3 and its mutant derivatives.

• Journal of Microbiology and Biotechnology
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• 제24권1호
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• pp.87-96
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• 2014

In the present study, a yeast species isolated from CETP, Vellore, Tamilnadu was identified as Cryptococcus sp. VITGBN2 based on molecular techniques and was found to be a potent producer of acidic diacetate sophorolipid in mineral salt media containing vegetable oil as additional carbon source. The chemical structure of the purified biosurfactant was identified as acidic diacetate sophorolipid through GC-MS analysis. This sophorolipid was used as a stabilizer for synthesis of zinc oxide nanoparticles (ZON). The formation of biofunctionalized ZON was characterized using UV-visible spectroscopy, XRD, scanning electron microscopy (SEM), and Fourier transform infrared spectroscopy. The antimicrobial activities of naked ZON and sophorolipid functionalized ZON were tested based on the diameter of inhibition zone in agar well diffusion assay, microbial growth rate determination, protein leakage analysis, and lactate dehydrogenase assay. Bacterial pathogen Salmonella enterica and fungal pathogen Candida albicans showed more sensitivity to sophorolipid biofunctionalized ZON compared with naked ZON. Among the two pathogens, S. enterica showed higher sensitivity towards sophorolipid biofunctionalized ZON. SEM analysis showed that cell damage occurred through cell elongation in the case of S. enterica, whereas cell rupture was found to occur predominantly in the case of C. albicans. This is the first report on the dual role of yeast-mediated sophorolipid used as a biostabilizer for ZON synthesis as well as a novel functionalizing agent showing antimicrobial property.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.149-154
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• 2005

궁극적으로 게이트를 저저항 복합 실리사이드로 대체하는 가능성을 확인하기 위해 70 nm 두께의 폴리실리콘 위에 각 20nm의 Ni, Co를 열증착기로 적층순서를 달리하여 poly/Ni/Co, poly/Co/Ni구조를 만들었다. 쾌속열처리기를 이용하여 실리사이드화 열처리를 40초간 $700{\~}1100^{\circ}C$ 범위에서 실시하였다. 복합 실리사이드의 온도별 전기저항변화, 두께변화, 표면조도변화를 각각 사점전기저항측정기와 광발산주사전자현미경, 주사탐침현미경으로 확인하였다. 적층순서와 관계없이 폴리실리콘으로부터 제조된 복합실리사이드는 $800^{\circ}C$ 이상부터 급격한 고저항을 보이고, 두께도 급격히 얇아졌다. 두께의 감소는 기존의 단결정에서는 없던 현상으로 폴리실리콘의 두께가 한정된 경우 금속성분의 inversion 현상이 커서 폴리실리콘이 오히려 실리사이드 상부에 위치하여 제거되기 때문이라고 생각되었고 $1000^{\circ}C$ 이상에서는 실리사이드가 형성되지 못하였다. 이러한 결과는 나노급 두께의 게이트를 저저항 실리사이드로 만 들기 위해서는 inversion과 두께감소를 고려하여야 함을 의미하였다.