• 제목/요약/키워드: Electrode interface

검색결과 494건 처리시간 0.028초

저전계영역에서 M$_{1}$-P-M$_{2}$형 고분자재료의 전기전도 1

  • 이덕출;임광현
    • 전기의세계
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    • 제29권11호
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    • pp.727-732
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    • 1980
  • The main purpose of this paper is to study on the effect of contact state between metal-polymer interface in electrical conduction of polymeric materials under low field region. The electric conduction of polythylene (PE) sandwitched in between two gold (Au) electrodes was lower than that of PE Sandwitched in between two Aluminium (Al) electrodes under low external field. The discharge current of PE which have been treated by the high field application is also obtained some results under no external field. The obtained results can suggest that the material of electrode come to influence on the electrical conduction of polymeric materials and are important as a basis for analysing the data on TSC. It is also suggestive that results of observation must be considered in cases of insulation design of electrical machinery.

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스패터 및 기계적 강도특성에 미치는 점용접 조건의 영향 (Effect of Spot Welding Conditions on Spatter and Mechanical Strength Properties)

  • 서도원;윤호철;전양배;임재규
    • Journal of Welding and Joining
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    • 제21권2호
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    • pp.70-75
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    • 2003
  • Spot welding is a process that sheet metals are joined in one or more spot by heating at the faying interface. In this process, the spatter is dispersed from melted area. It has been reported that spatter generation has adverse effects on weld quality. However, no systematic study has been carried out to find out its effect on weld quality in resistance spot welding processes. In this study, specially designed specimen are used to perform experimental investigation of spatter generation and its effect. Major finding of this study show trends in tensile-shear strength for various amounts of spatter generated during spot welding process. Thus, optimum welding conditions are proposed in view of spatter generation and tensile-shear strength. (Received December 11, 2002)

Corrosion Monitoring of PEO-Pretreated Magnesium Alloys

  • Gnedenkov, A.S.;Sinebryukhov, S.L.;Mashtalyar, D.V.;Gnedenkov, S.V.;Sergienko, V.I.
    • Corrosion Science and Technology
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    • 제16권3호
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    • pp.151-159
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    • 2017
  • The MA8 alloy (formula Mg-Mn-Се) has been shown to have greater corrosion stability than the VMD10 magnesium alloy (formula Mg-Zn-Zr-Y) in chloride-containing solutions by Scanning Vibrating Electrode Technique (SVET) and by optical microscopy, gravimetry, and volumetry. It has been established that the crucial factor for the corrosion activity of these samples is the occurrence of microgalvanic coupling at the sample surface. The peculiarities of the kinetics and mechanism of the corrosion in the local heterogeneous regions of the magnesium alloy surface were investigated by localized electrochemical techniques. The stages of the corrosion process in artificial defects in the coating obtained by plasma electrolytic oxidation (PEO) at the surface of the MA8 magnesium alloy were also studied. The analysis of the experimental data enabled us to determine that the corrosion process in the defect zone develops predominantly at the magnesium/coating interface. Based on the measurements of the corrosion rate of the samples with PEO and composite polymer-containing coatings, the best anticorrosion properties were displayed by the composite polymer-containing coatings.

The Formation and Phase Stability of Cobalt-aluminide(CoAl) Thin Films on GaAs

  • Ko, Dae-Hong;Robert Sinclair
    • The Korean Journal of Ceramics
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    • 제4권1호
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    • pp.43-46
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    • 1998
  • We have investigated the formation and thermal stability of cobalt aluminide(CoAl) thin films on GaAs. In order to obtain cobalt-aluminide thin films, we deposited a multilayer of Co/Al on GaAs, and subsequently annealed the samples at 80$0^{\circ}C$ for 30 min. After annealing, single-phase cobalt aluminide was produced showing a flat and uniform interface with GaAs. which indicates that cobalt aluminide (CoAl) is thermally stable with GaAs. In addition, the adherence and mechanical properties of the as-deposited, and annealed Co/Al multilayer structure on GaAs are compatible with those required for device fabrication processes. The electrical property of the CoAl/GaAs contact shows rectifying characteristics, indicating that the diodes were usable as rectifying gate electrodes.

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강유전 고분자 박막을 이용한 유기고분자 태양전지에서의 효율 증대 (Efficiency Enhancement in Organic Polymer Solar Cells with Ferroelectric Films)

  • 박자영;정치섭
    • 한국전기전자재료학회논문지
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    • 제30권2호
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    • pp.126-132
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    • 2017
  • The power conversion efficiency of organic polymer solar cells was enhanced by introducing a ferroelectric polymer layer at the interface between active layer and metal electrode. The power conversion efficiency was increased by 50% through the enhancement of the open circuit voltage. To investigate the role of the ferroelectric layer on the dissociation process of the excitons, non-radiative portion of the exciton decay was directly measured by using photoacoustic technique. The results show that the ferroelectric nature of the buffer layer does not play any roles on the dissociation process of the excitons, which indicates the efficiency enhancement is not due to the ferroelectricity of the buffer layer.

$LiNbO_3/Si_3N_4$ 구조를 이용한 MFIS 구조의 형성 및 특성 (Formations and properties of MFIS structure using $LiNbO_3/Si_3N_4$ structure)

  • 김용성;정상현;정순원;이남열;김진규;김광호;유병곤;이원재;유인규
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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    • pp.221-224
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    • 2000
  • We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.

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강유전박막의 피로현상을 고려한 MFSFET 소자의 특성 (Device Characteristics of MFSFET with the Fatigue of the Ferroelectric Thin Film)

  • 이국표;강성준;윤영섭
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 추계종합학술대회 논문집
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    • pp.191-194
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    • 1999
  • Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET (Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. We show net switching current decreases due fatigue in the switching model. It indicates that oxygen vacancy strongly suppresses polarization reversal. The difference of saturation drain current of the device before fatigue is shown by the dual threshold voltages in I$_{D}$-V$_{D}$ curve as 6㎃/$\textrm{cm}^2$ and decreases as much as 50% after fatigue. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.lms.

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가스절연 개폐장치에서 유전율 구배를 갖는 고체 절연물의 형상 최적화 (Shape Optimization of a Permittivity Graded Solid Insulator in a Gas Insulated Switchgear)

  • 주흥진;김동규;고광철
    • 한국전기전자재료학회논문지
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    • 제25권6호
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    • pp.467-473
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    • 2012
  • A functionally graded material (FGM) spacer, which the distribution of dielectric permittivity inside an insulator changes spatially, can considerably reduce the electric field concentration around a high-voltage electrode and along the gas-insulator interface when compared to a conventional spacer with a uniform permittivity distribution. In this research, we propose the FGM spacer with an elliptical permittivity distribution instead of that with a distribution of dielectric permittivity varying along a radial direction only in order to improve efficiently the insulation capability. The optimal design of the elliptical FGM spacer configuration is performed by using the response surface methodology (RSM) combined with the steepest descent method (SDM).

DO 센서용 산소전극의 온도보상에 대한 일 방안 (A Method on the Temperature Compensation for the Oxygen Electrode for DO Sensor)

  • 이동희;최복길
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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    • pp.376-378
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    • 1995
  • A method is presented for the design and fabrication of the temperature compensation circuits on the Clark electrodes for measuring the dissolved oxygen(DO) concentration. The discussion includes a method of the sensor interface circuits for the DO sensor. Typical polarograms for the DO probes under test using this sensor circuits are presented. High accuracy over 99 % of the I to V conversion using the proposed circuit is verified. Temperature dependence for the test DO probe is well compensated automatically using the thermistor($2k\Omega,\;25^{\circ}C$) in series with correction resistor in the feedback loop of the op-amp circuit in the temperature range of the 0-50$^{\circ}C$.

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초소형정밀기계기술이 적용된 뇌파센서의 신호 증폭 회로설계 (The amplifier-circuit design of EEG sensor based on MEMS)

  • 최성자;이승한;조영택;조한욱
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2015년도 제46회 하계학술대회
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    • pp.1427-1428
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    • 2015
  • MEMS(Micro Electro-mechanical System) are getting attention as promising industry in the 21st century. Car air bags, acceleration sensors, and medical, information appliances are being actively applied in MEMS. This paper suggest the electrical electrodes of brain signal applied MEMS model and the prototype design for EEG signal amplification circuit. Also, we suggest an independent BCI(Brain Computer Interface) system with brain electrical signal of electrode models and wireless communication platform.

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