• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.423-430
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• 2005

In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating $n^{+}$ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating $n^{+}$ zones, the transistor channel region is split into four zones with different lengths defined by a floating $n^{+}$ region. This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9 mA while that of the conventional dual-gate structure is 0.5 mA at a 12 V drain voltage and a 7 V gate voltage. This results show a $80 {\%}$ enhancement in on-current by adding two floating $n^{+}$ zones. Moreover we observed the reduction of electric field In the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

• 조명전기설비학회논문지
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• 제27권9호
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• pp.74-82
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• 2013

This paper presents a novel maximum power point tracking for a photovoltaic power (PV) system with a direct control plan. Maximum power point tracking (MPPT) must usually be integrated with photovoltaic (PV) power systems so that the photovoltaic arrays are able to deliver maximum available power. The maximum available power is tracked using specialized algorithms such as Perturb and Observe (P&O) and incremental Conductance (indCond) methods. The proposed method has the direct control of the MPPT algorithm to change the duty cycle of a dc-dc converter. The main difference of the proposed system to existing MPPT systems includes elimination of the proportional-integral control loop and investigation of the effect of simplifying the control circuit. The proposed method thus has not only faster dynamic performance but also high tracking accuracy. Without a conventional controller, this method can control the dc-dc converter. A simulation model and the direct control of MPPT algorithm for the PV power system are developed by Matlab/Simulink, SimPowerSystems and Matlab/Stateflow.

• 센서학회지
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• 제30권6호
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• pp.441-445
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• 2021

The components affecting the extrinsic transconductance (g_{m_ext}) in In_0.7Ga_0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (g_{m_int}) and the g_{m_ext} of the devices. Two types of In_0.7Ga_0.3As QW HEMT were fabricated with gate lengths ranging from 10 ㎛ to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting g_{m_int}, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (R_S and R_D), apparent mobility (𝜇_{n_app}), and saturation velocity (𝜈_sat).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.261-264
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• 1995

The response speed enhancement in picosecond photoconductor made from RF planar magnetron sputtered hydrogenated amorphous germanium thin film is discussed. Pulsed laser annealing technique was used to fabricate the highly conductive ohmic contacts and to remove the shallow deflects in the deposited photoconductive film using the different laser powers. Measured V-I curve showed -5 times bigger conductance in photoconductive gap than the one used by the conventional vacuum annealing method using strip heater.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.976-980
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• 2002

This paper repors on low temperature sealing process of PDP using binder and capping glass. The exhausting hole on rear glass of PDP was sealed by capping glass using screen-printed binder without exhausting glass tube. Based on the tubeless packaging process, out gassing problem could be reduced and vacuum conductance could be improved by eliminating exhaust tube.

• 대한전기학회논문지:시스템및제어부문D
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• 제49권11호
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• pp.617-624
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• 2000

The negative weight can be ofter seen in Hopfield neural network, which is difficult to implement negative conductance in circuits. Usually, the inverted output of amplifier is used to avoid negative resistors for expressing the negative weights in hardware implementation. However, there is some difference between using negative resistor and the inverted output of amplifier for representing the negative weight. This difference is discussed in this paper.

• 대한전기학회논문지
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• 제38권2호
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• pp.144-150
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• 1989

The competitive power extraction problem in a linear n-port network consisting of resistances and independent sources with the same frequency is solved. For solving the problem, the definition of the two-port image impedances is extended to the n-port image impedances. In a competitive power extraction from an n-port network, the load resistances eventually approach the image resistances been found to be between the reciprocal of the short circuit conductance and the open circuit resistance.

• 한국재료학회지
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• 제29권5호
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• pp.311-316
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• 2019

Transparent conducting electrodes are essential components in various optoelectrical devices. Although indium tin oxide thin films have been widely used for transparent conducting electrodes, silver nanowire network is a promising alternative to indium tin oxide thin films owing to its lower processing cost and greater suitability for flexible device application. In order to widen the application of silver nanowire network, the electrical conductance has to be improved while maintaining high optical transparency. In this study, we report the enhancement of the electrical conductance of silver nanowire network transparent electrodes by copper electrodeposition on the silver nanowire networks. The electrodeposited copper lowered the sheet resistance of the silver nanowire networks from $21.9{\Omega}{\square}$ to $12.6{\Omega}{\square}$. We perform detailed X-ray diffraction analysis revealing the effect of the amount of electrodeposited copper-shell on the sheet resistance of the core-shell(silver/copper) nanowire network transparent electrodes. From the relationship between the cross-sectional area of the copper-shell and the sheet resistance of the transparent electrodes, we deduce the electrical resistivity of electrodeposited copper to be approximately 4.5 times that of copper bulk.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.354-355
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• 2008

The sensitivity and sensing margin of SOI(silicon on insulator) nano-wire BioFET(field effect transistor) were investigated by using back-gate bias. The channel conductance modulation was affected by doping concentration, channel length and channel width. In order to obtain high sensitivity and large sensing margin, low doping concentration, long channel and narrow width are required. We confirmed that the electrical sensing by back-gate bias is effective method for evaluation and optimization of bio-sensor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.101-102
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• 2007

In order to characterize an electrical conductivity of ${\lambda}$-DNA by relative humidity, I-V characteristics through DNA on Au electrode with $1{\mu}m$ gap were measured as a function of the relative humidity. The electrical conductivity increased and the resistance decreased with an increase of humidity. The maximum effect of the humidity on the electrical property of DNA was obtained with the range from 43 to 82%. The hysteresis loop in I-V characteristics of DNA was disappeared above 92% of the humidity while the applying voltage was changed.