Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Comprehensive study of components affecting extrinsic transconductance in In0.7Ga0.3As quantum-well high-electron-mobility transistors for image sensor applications

이미지 센서 적용을 위한 In0.7Ga0.3As QW HEMT 소자의 extrinsic trans-conductance에 영향을 미치는 성분들의 포괄적 연구

  • Yun, Seung-Won (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Kim, Dae-Hyun (School of Electronic and Electrical Engineering, Kyungpook National University)
  • 윤승원 (경북대학교 전자전기공학부) ;
  • 김대현 (경북대학교 전자전기공학부)
  • Received : 2021.10.19
  • Accepted : 2021.11.23
  • Published : 2021.11.30
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Abstract

The components affecting the extrinsic transconductance (gm_ext) in In0.7Ga0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (gm_int) and the gm_ext of the devices. Two types of In0.7Ga0.3As QW HEMT were fabricated with gate lengths ranging from 10 ㎛ to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting gm_int, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (RS and RD), apparent mobility (𝜇n_app), and saturation velocity (𝜈sat).

Keywords

Acknowledgement

본 연구는 방위사업청 및 산업통상자원부의 공동재원으로 민군겸용기술개발사업 (No. 19-CM-BD-05)의 지원으로 수행된 결과임.

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