• The Transactions of the Korean Institute of Electrical Engineers D
• /
• v.50 no.10
• /
• pp.479-485
• /
• 2001

In this paper, we introduce a charge pump phase-locked loop (PLL) architecture which employs a precharge phase frequency detector (PFD) and a sequential PFD to achieve a high frequency operation and a fast acquisition. Operation frequency is increased by using the precharge PFD when the phase difference is within $-{\pi}{\sim}{\pi}$ and acquisition time is shortened by using the sequential PFD and the increased charge pump current when the phase difference is larger than ${\pm}{\pi}$. So error detection range of the proposed PLL structure is not limited to $-{\pi}{\sim}{\pi}$ and a high frequency operation and a higher speed lock-up time can be achieved. The proposed PLL was designed using 1.5 ${\mu}m$ CMOS technology with 5V supply voltage to verify the lock in process. The proposed PLL shows successful acquisition for 200 MHz input frequency. On the other hand, the conventional PLL with the sequential PFD cannot operate at up to 160MHz. Moreover, the lock-up time is drastically reduced from 7.0 ${\mu}s\;to\;2.0\;{\mu}s$ only if the loop bandwidth to input frequency ratio is regulated by the divide-by-4 counter during the acquisition process. By virtue of this dual PFDs, the proposed PLL structure can improve the trade-off between acquisition behavior and locked behavior.

• Proceedings of the IEEK Conference
• /
• 2002.06b
• /
• pp.305-308
• /
• 2002

An 1.8V 6bit IGSPS ADC for high speed data acquisition is discussed in this paper. This ADC is based on a flash ADC architecture because the flash ADC is the only practical architecture at conversion rates of IGSPS and beyond. A straightforward 6bit full flash A/D converter consists of two resistive ladders with 63 laps, 63 comparators and digital blocks. One important source of errors in flash A/D converter is caused by the capacitive feedthrough of the high frequency input signal to the resistive reference-lauder. Consequently. the voltage at each tap of the ladder network can change its nominal DC value. This means large transistors have a large parasitic capacitance. Therefore, a dual resistive ladder with capacitor is employed to fix the DC value. Each resistive ladder generates 32 clean reference voltages which alternates with each other. And a two-stage amplifier is also used to reduce the effect of the capacitive feedthrough by minimizing the size of MOS connected to reference voltage. The proposed ADC is based on 0.18${\mu}{\textrm}{m}$ 1-poly 6-metal n-well CMOS technology, and it consumes 307㎽ at 1.8V power supply.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.27 no.6C
• /
• pp.619-624
• /
• 2002

In this paper, a novel architecture of programmable divider with fifty percent duty cycle output and programmable dividing number has been proposed. Through HSPICE simulation, a 900MHz frequency synthesizer with proposed (sequency divider has designed in a standard 0.25㎛ CMOS technology To verify the operation of proposed frequency divider, a chip had been fabricated using 0.65㎛ 2-poly, 3-metal standard CMOS processing and experimental result shows that the proposed frequency divider works well. The designed voltage controlled oscillator(VCO) has a center frequency of 900MHz a tuning range of $\pm$10%, and a gain of 154HHz/V. The simulated frequency synthesizer performance has a settling time of 1.5$\mu$s, a frequency range from 820MHz to IGHz and power consumption of 70mW at 2.5V power supply voltage.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.9 no.1
• /
• pp.1-7
• /
• 2009

This paper describes design of high energy efficiency 32 bit parallel processor core using instruction-levels data gating and dynamic voltage scaling (DVS) techniques. We present instruction-levels data gating technique. We can control activation and switching activity of the function units in the proposed data technique. We present instruction-levels DVS technique without using DC-DC converter and voltage scheduler controlled by the operation system. We can control powers of the function units in the proposed DVS technique. The proposed instruction-levels DVS technique has the simple architecture than complicated DVS which is DC-DC converter and voltage scheduler controlled by the operation system and a hardware implementation is very easy. But, the energy efficiency of the proposed instruction-levels DVS technique having dual-power supply is similar to the complicated DVS which is DC-DC converter and voltage scheduler controlled by the operation system. We simulate the circuit simulation for running test program using Spectra. We selected reduced power supply to 0.667 times of the supplied power supply. The energy efficiency of the proposed 32 bit parallel processor core using instruction-levels data gating and DVS techniques can improve about 88.4% than that of the 32 bit parallel processor core without using those. The designed high energy efficiency 32 bit parallel processor core can utilize as the coprocessor processing massive data at high speed.

• Journal of Electrical Engineering and Technology
• /
• v.13 no.1
• /
• pp.226-239
• /
• 2018

In this paper, design and control method ZVT Interleaved Bidirectional LDC(IB-LDC) for mild-hybrid electric vehicle is proposed. The IB-LDC is composed of interleaved buck and boost converters employing an auxiliary inductor and auxiliary capacitors to achieve zero-voltage-transition. Operating principle of IB-LDC according to operation mode is introduced and mathematically analyzed in buck and boost mode. Moreover, PFM and phase control are proposed to reduce circulating current for low power range. Passive components design such as main inductor, auxiliary inductor and capacitors is suggested, considering ZVT condition and maximizing efficiency. Furthermore, a 600W prototype of ZVT IB-LDC for MHEVs is built and tested to verify validity.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.11
• /
• pp.13-22
• /
• 2010

This paper proposed the dual-loops multiphase DLL based mixed VCO/VCDL for a high frequency phase noise suppression of the input clock and the multiple frequencies generation with a precise duty cycle. In the proposed architecture, the dual-loops DLL uses the dual input differential buffer based nMOS source-coupled pairs at the input stage of the mixed VCO/VCDL. This can easily convert the input and output phase transfer of the conventional DLL with bypass pass filter characteristic to the input and output phase transfer of PLL with low pass filter characteristic for the high frequency input phase noise suppression. Also, the proposed DLL can correct the duty-cycle error of multiple frequencies by using only the duty-cycle correction circuits and the phase tracking loop without additional correction controlled loop. At the simulation result with $0.18{\mu}m$ CMOS technology, the output phase noise of the proposed DLL is improved under -13dB for 1GHz input clock with 800MHz input phase noise. Also, at 1GHz operating frequency with 40%~60% duty-cycle error, the duty-cycle error of the multiple frequencies is corrected under $50{\pm}1%$ at 2GHz the input clock.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.34C no.11
• /
• pp.1-11
• /
• 1997

The transient current components of the dRAM are analyzed and the sensing current, data path operation current and DC leakage current are revealed to be the major curretn components. It is expected that the supply voltage of less than 1.5V with low VT MOS witll be used in multi-giga bit dRAM. A low voltage dual VT self-timed CMOS logic in which the subthreshold leakage current path is blocked by a large high-VT MOS is proposed. An active signal at each node of the nature speeds up the signal propagation and enables the synchronous DRAM to adopt a fast pipelining scheme. The sensing current can be reduced by adopting 8 bit prefetch scheme with 1.2V VDD. Although the total cycle time for the sequential 8 bit read is the same as that of the 3.3V conventional DRAM, the sensing current is loered to 0.7mA or less than 2.3% of the current of 3.3V conventional DRAM. 4 stage pipeline scheme is used to rduce the power consumption in the 4 giga bit DRAM data path of which length and RC delay amount to 3 cm and 23.3ns, respectively. A simple wave pipeline scheme is used in the data path where 4 sequential data pulses of 5 ns width are concurrently transferred. With the reduction of the supply voltage from 3.3V to 1.2V, the operation current is lowered from 22mA to 2.5mA while the operation speed is enhanced more than 4 times with 6 ns cycle time.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.25 no.1B
• /
• pp.183-192
• /
• 2000

In this paper, the dual looped CMOS PLL with 3-250MHz input locking range at a single 13.3V is designed. This paper proposed a new PLL architecture with a current pumping algorithm to improve voltage-to-frequencylinearity of VCO(Voltage Controlled Oscillator). The designed VCO operates at a wide frequency range of75.8MHz-lGHz with a high linearity. Also, PFD(Phase frequency Detector) circuit preventing voltage fluctuation of the charge pump with loop filter circuit under the locked condition is designed. The simulation results of the PLL using 0.6 um N-well single poly triple metal CMOS technology illustrate a locking time of 3.5 us, a power dissipation of 92mW at 1GHz operating frequency with 125MHz of input frequency. Measured results show that the phase noise of VCO with V-I converter is -100.3dBc/Hz at a 100kHz offset frequency.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.39 no.4
• /
• pp.43-53
• /
• 2002

In this paper, a new dynamic D-flip-flop which does not suffer from charge sharing and glitch problems is proposed. And a dual-modulus divide-by-128/129 prescaler has been designed with the proposed D-flip-flops using a 0.6$0.6{\mu}m$ CMOS technology. Eleven-transistor architecture enables it to operate at the higher frequency range and the transistor merging technique contributes to the reduction of power consumption. At 5V supply voltage, the simulated maximum operating frequency and the current consumption of the divide-by-128/129 prescaler are 1.97GHz and 7.453mA, respectively.

• Journal of IKEEE
• /
• v.23 no.3
• /
• pp.917-924
• /
• 2019

This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5G communication standards employing carrier aggregation (CA). The proposed LNA encompasses a common input stage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operate in both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input and second stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain, wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls the single input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band and intra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation, the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figure and input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNA operates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dB with equally good matching performance. An $IIP_3$ value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.