• ETRI Journal
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• v.42 no.5
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• pp.790-798
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• 2020

Herein, a low-ripple coarse-fine digital low-dropout regulator (D-LDO) without ringing in the transient state is proposed. Conventional D-LDO suffers from a ringing problem when settling the output voltage at a large load transition, which increases the settling time. The proposed D-LDO removes the ringing and reduces the settling time using an auxiliary power stage which adjusts its output current to a load current in the transient state. It also achieves a low output ripple voltage using a comparator with a complete comparison signal. The proposed D-LDO was fabricated using a 65-nm CMOS process with an area of 0.0056 μ㎡. The undershoot and overshoot were 47 mV and 23 mV, respectively, when the load current was changed from 10 mA to 100 mA within an edge time of 20 ns. The settling time decreased from 2.1 ㎲ to 130 ns and the ripple voltage was 3 mV with a quiescent current of 75 ㎂.

• ETRI Journal
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• v.37 no.5
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• pp.961-971
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• 2015

This paper proposes a 250 mV supply voltage digital low-dropout (LDO) regulator. The proposed LDO regulator reduces the supply voltage to 250 mV by implementing with all digital circuits in a$0.11{\mu}m$ CMOS process. The fast current tracking scheme achieves the fast settling time of the output voltage by eliminating the ringing problem. The over-voltage and under-voltage detection circuits decrease the overshoot and undershoot voltages by changing the switch array current rapidly. The switch bias circuit reduces the size of the current switch array to 1/3, which applies a forward body bias voltage at low supply voltage. The fabricated LDO regulator worked at 0.25 V to 1.2 V supply voltage. It achieved 250 mV supply voltage and 220 mV output voltage with 99.5% current efficiency and 8 mV ripple voltage at $20{\mu}A$ to $200{\mu}A$ load current.

• Journal of IKEEE
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• v.27 no.3
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• pp.333-339
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• 2023

The global market for wearable devices is growing, driving demand for efficient PMICs. Wearable PMICs must be highly energy-efficient despite limited hardware resources. Advancements in process technology enable low-power consumption, but traditional analog LDO regulators face challenges with reduced power supply voltage. In this paper, a novel ADC design with a 3-bit continuous-time flash ADC for the coarse loop and a 5-bit discrete-time SAR ADC for the fine loop is proposed for digital LDO, achieving a 34.78 dB SNR and 5.39 bits ENOB in a 55-nm CMOS technology.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.6
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• pp.1154-1162
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• 2016

This paper proposes a fast-transient digital LDO(Low dropout) regulator with binary-weighted current control technique. Conventional digital LDO takes a long time to stabilize the output voltage, because it controls the amount of current step by step, thus ringing problem is generated. Binary-weighted current control technique rapidly stabilizes output voltage by removing the ringing problem. When output voltage reliably reaches the target voltage, It added the FRZ mode(Freeze) to stop the operation of digital LDO. The proposed fast response digital LDO is used with a slow response DC-DC converter in the system which rapidly changes output voltage. The proposed digital controller circuit area was reduced by 56% compared to conventional bidirectional shift register, and the ripple voltage was reduced by 87%. A chip was implemented with a $0.18{\mu}F$ CMOS process. The settling time is $3.1{\mu}F$ and the voltage ripple is 6.2mV when $1{\mu}F$ output capacitor is used.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.371-374
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• 2013

In this paper, a sensor node circuit using solar energy harvesting is proposed. PMU(Power Management Unit) manages the energy converted from a solar cell. In order to supply a constant voltage to the sensor node, an LDO (Low Drop Out Regulator) is used. The LDO drives a temperature sensor and a SAR ADC(Successive Approximate Register Analog-to-Digital Converter). The circuit has been designed in 0.35um CMOS process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.585-588
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• 2014

This paper presents a self-powered sensor node circuit using photovoltaic and vibration energy harvesting. The harvested energy from a solar cell and a vibration device(PZT) is stored in a storage capacitor. The stored energy is managed by a PMU(Power Management Unit). In order to supply a stable voltage to the sensor node, an LDO(Low Drop Out Regulator) is used. The LDO drives a temperature sensor and a SAR ADC(Successive Approximate Register Analog-to-Digital Converter), and 10-bit digital output data corresponding to current temperature is obtained. The proposed circuit is designed in a 0.35um CMOS process, and the designed chip size including PADs is $1.1mm{\times}0.95mm$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.85-90
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• 2009

This paper presents a single supply PLC SoC ASIC with a built-in analog Front-end circuit. To achieve the low power consumption along with low cost, this PLC SoC employs fully CMOS Analog Front End (AFE) and several LDO regulators (LDOs) to provide the internal power for Logic Core, DAC and Input/output Pad driver. The receiver part of the AFE consists of Pre-amplifier, Gain Amplifier and 1 bit Comparator. The transmitter part of the AFE consists of 10 bit Digital Analog Converter and Line Driver. This SoC is implemented with 0.18 ${\mu}m$ 1 Poly 5 Metal CMOS Process. The single supply voltage is 3.3 V and the internal powers are provided using LDOs. The total power consumption is below 30 mA at stand-by mode to meet the Eco-Design requirement. The die size is 3.2 $\times$ 2.8 $mm^{2}$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.5
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• pp.893-899
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• 2008

Behavioral level simulations of LDO voltage regulator and phase locked loop(PLL) are performed with CPPSIM, a behavioral-level simulation tool based on C language. The validity of the simulation tool is examined by modeling analog circuits and simulating the circuits. In addition, the designed PLL adopted digital architecture to possess advantages of digital circuits.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.7
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• pp.571-575
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• 2017

This paper presents a C-band bi-directional T/R chipset in $0.13{\mu}m$ TSMC CMOS technology for phased array antenna. The T/R chipset, which is a key component of phased array antenna, consists of a 6 bit phase shifter, a 6 bit step attenuator, and three bi-directional gain amplifiers. The phase shifter is controlled up to $354^{\circ}$ with $5.625^{\circ}$ phase step for precise beam steering. The step attenuator is also controlled up to 31.5 dB with 0.5 dB attenuation step for the side lobe level rejection. The LDO(Low Drop Output) regulator for stable 1.2 V DC power and the SPI(Serial Peripheral Interface) for digital control are integrated in the chipset. The chip size is $2.5{\times}1.5mm^2$ including pads.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.5
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• pp.383-388
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• 2018

This paper presents a 1.8 GHz six-port-based impedance modulator using CMOS technology, which can select an arbitrary load impedance with switch control. The proposed 1.8-GHz impedance modulator comprises a Wilkinson power divider, three quadrature hybrid couplers, and four SP3T switches for each load impedance selection. The measured insertion loss of -13 dB and the input/output return losses of >10 dB are achieved in the range of 1.4~2.2 GHz. The low drop output regulator for a stable 3.3 V DC power and the serial peripheral interface(SPI) for an easy digital control are integrated. The chip size, including the pads, is $1.7{\times}1.8mm^2$.