• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• 한국기계가공학회지
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• 제19권10호
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• pp.8-15
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• 2020

The diffusion cell method is the main technique employed for the in vitro diffusion test of transdermal drug delivery preparations. Most existing transdermal diffusion devices use a water bath heating structure and direct current motor magnetic stirrer. However, these devices are confronted with problems, such as large volume, incompatible vertical and horizontal diffusion cells, few diffusion cell sets, and poor reliability. To overcome these deficiencies, the system adopts a dry heating method and uses a rotating magnetic field generated by the electromagnetic stirrer to drive the magnetic stirrer. Accordingly, the resulting device is characterized by a simple structure and small volume, convenient operation, compatible vertical and horizontal diffusion cells, and numerous diffusion cell sets. The reliability and practicability of the system is verified by the in vitro percutaneous permeability test of the bisoprolol patch.

• 한국위성정보통신학회논문지
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• 제10권4호
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• pp.6-11
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• 2015

PPS 소자가 삽입된 N형 실리콘 제어 정류기(NSCR_PPS)소자에서 게이트와 $N^+$ 확산층 간격(Gate to Primary $N^+$ diffusion Space; GPNS)의 변화가 정전기 보호 성능에 미치는 영향을 연구하였다. FPW 구조와 CPS 이온주입을 행하지 않은 구조를 갖는 종래의 NSCR 표준소자는 on 저항, 스냅백 홀딩 전압 및 열적 브레이크다운 전압이 너무 낮아 정전기 보호소자의 필요조건을 만족시키지 못해 마이크로칩의 정전기보호소자로 적용이 어려웠다. 그러나 본 연구에서 제안하는 PPW 구조와 CPS 이온주입을 동시에 적용하여 변형설계된 소자에서는 GPNS의 변화가 정전기 보호성능의 향상에 영향을 주는 중요한 파라미터였으며, 정전기보호소자의 설계창을 만족시키는 향상된 정전기보호성능을 나타내어 고전압 동작용 마이크로 칩의 정전기보호 소자로 적용 가능함을 확인하였다.

• 한국산업융합학회 논문집
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• 제5권1호
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• pp.39-43
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• 2002

In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.

• 복식문화연구
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• 제26권2호
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• pp.157-171
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• 2018

As the next generation of smartphone and tablet computers, wearable devices are currently being developed and available in market in various forms. Smart clothing is a wearable device that holds the greatest potential for future development but low in market penetration. This study was designed to identify factors that influence adoption and diffusion of smart clothing. In-depth interviews with potential consumers who were knowledgeable about and interested in smart clothing were conducted. A semantic network analysis method was used. The results showed that consumers perceived smart clothing as a garment rather than as a type of wearable device and had a positive perception of smart apparel as more convenient and advanced than functional apparel. At the same time, however, consumers had a negative perception of smart clothing as unnecessary, ugly, and injurious to health. Consumers also worried that wearing smart apparel over long periods of time would negatively impact their health. Factors affecting resistance to smart apparel included low utility, perceived risk, and lack of aesthetic completeness. Usefulness and convenience were factors that affected the acceptance of smart clothing. The innovativeness of the product was more influential than consumer innovativeness in the process of adoption and diffusion of smart clothing.

• 대한환경공학회지
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• 제39권5호
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• pp.282-287
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• 2017

본 연구의 목적은 방사능 사고로 인한 오염물질 유입으로 인한 영향을 최소화하기 위한 제염제의 혼합확산장치 개발에 앞서 장치 가동으로 인한 혼합 및 확산영향을 예측하는데 있다. 유동특성분석을 위해 사용된 추적자는 방사성 동위원소는 Gy, To이며, 이를 검측하기 위해 2인치 NaI 방사선 검출기를 사용했다. 본 연구에 적용된 제염제 혼합확산장치의 임펠러는 3가지 type으로 제작하였다. 방사혼합형 임펠러는 상향류 흐름을 이용하여 수표면으로 확산이 가능하며, 최적의 조건을 찾기 위해 핀 구조를 조정하였다. 방사능 동위원소를 이용한 제염제 혼합확산장치의 유동특성을 분석한 결과, 모델별 혼합확산과 유동패턴특성을 획득하였다. Model 3 type은 별도의 Fin유도부와 보조 Fin이 구성되어 있어 다른 type의 임펠러보다 확산속도가 크고 완전혼합에 도달하는 시간이 짧게 나타났다.

• Journal of Korean Neurosurgical Society
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• 제58권4호
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• pp.316-320
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• 2015

Objective : The main concern during transfemoral carotid artery stenting (CAS) is preventing cerebral embolus dislodgement. We compared clinical outcomes and intraprocedural embolization rates of CAS using a distal filter protection device or proximal balloon occlusion device. Methods : From January 2011 to March 2015, a series of 58 patients with symptomatic or asymptomatic internal carotid artery stenosis ${\geq}70%$ were treated with CAS with embolic protection device in single center. All patients underwent post-CAS diffusion-weighted magnetic resonance imaging (DW-MRI) to detect new ischemic lesions. We compared clinical outcomes and postprocedural embolization rates. Results : CAS was performed in all 61 patients. Distal filter protection success rate was 96.6% (28/29), whose mean age was 70.9 years, and mean stenosis was 81%. Their preprocedural infarction rate was 39% (11/28). Subsequent DW-MRI revealed 96 new ischemic lesions in 71% (20/28) patients. In contrast, the proximal balloon occlusion device success rate was 93.8% (30/32), whose mean age was 68.8 years and mean stenosis was 86%. Preprocedure infarction rate was 47% (14/30). DW-MRI revealed 45 new ischemic lesions in 57% (17/30) patients. Compared with distal filter protection device, proximal balloon occlusion device resulted in fewer ischemic lesions per patient (p=0.028). In each group, type of stent during CAS had no significant effect on number of periprocedural embolisms. Only 2 neurologic events occurred in the successfully treated patients (one from each group). Conclusion : Transfemoral CAS with proximal balloon occlusion device achieves good results. Compared with distal filter protection, proximal balloon occlusion might be more effective in reducing cerebral embolism during CAS.

• 대한전기학회논문지
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• 제43권7호
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• pp.1127-1134
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• 1994

The analytical model for the induced Hall field in the magnetotransistor considering the diffusion of carriers has been proposed and verified by experiment and simulation. Previous models for the induced Hall field in the magnetotransistor do not consider the influence of the diffusion carrier transport. However, the carrier diffusion in the base region of magnetotransistors cannot be neglected and should be considered to evaluated the Hall field in the magnetotransistors accurately. We have measured the Hall voltage in the base region of the fabricated magnetotransistors. The measured values have been compared with the numerical results evaluated from our diffusion model as well as the calculated results from the conventional model. The evaluated Hall voltage from the diffusion model agrees well with the measured values while the sign of the Hall voltage calculated by the conventional model is opposite to that of the measured values in the saturation region. This discrepancy is due to the fact that the diffusion model considers the carrier diffusion while the conventional one does not. The Hall field model including the influence of carrier diffusion may be an important tool to optimize the device structure and to understand the operating principle of the magnetotransistor.

• 한국터널지하공간학회 논문집
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• 제20권1호
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• pp.225-234
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• 2018

국내 대도시 도심지역은 지속적인 인구증가와 교통량의 증가로 심각한 교통혼잡 문제가 발생하고 있다. 교통혼잡 등의 문제를 해결하기 위한 방안으로 서울, 부산 등의 도심지에서는 지하공간을 활용한 소형차 전용 대심도 복층터널 연구가 활발히 이루어지고 있다. 이러한 소형차 전용 대심도 복층터널의 특징은 비교적 단면의 높이가 낮아 터널 내 화재 발생시 화재연기의 전파가 전 차종이 통행 가능한 일반적인 도로 터널보다 빠르게 전파되어 인명피해 발생이 우려된다. 따라서, 소형차 전용 대심도 복층터널에 화재 발생시 화재연기의 확산을 지연시켜 인명피해 발생을 최소화시키는 화재연기 확산지연장치가 필요하다. 선행하여 연구된 대심도 복층터널 화재시 연기확산 방지연구에서 3차원 CFD 해석을 통하여 화재연기 확산지연장치 작동 시 차단 면적에 따라 확산 효과를 분석하였고, 대심도 복층터널 화재연기 확산지연장치 연구개발에서는 대심도 복층터널에 적용성이 뛰어나며 경제적으로 상품가치가 높은 스프링 탄성을 이용한 화재연기 확산지연장치에 대하여 연구하였다. 이에, 본 연구에서는 화재연기 확산을 지연시키기 위한 화재연기 확산지연장치 시제품을 제작하여 화재연기 확산지연 효과를 실험하였으며, 분석 결과 화재연기 확산지연장치 작동 시 화재연기 지연효과가 나타났다. 따라서, 화재연기 확산지연 장치를 대심도 복층터널에 적용시 대피자들의 인명피해를 최소화시킬 수 있을 것으로 판단된다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2366-2371
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• 2007

Spray combustion characteristics of a conducting fuel electrospray have been studied for clean combustion technology. The multiplexing system which can retain the characteristics of the cone-jet mode is inevitable for the electrospray application. Charged micro droplets can be obtained in almost uniform size during operating the electrospray in the cone-jet mode. This experiment device set up the multiplexed grooved nozzle system with the extractor. Using the grooved nozzle, the stable cone-jet mode can be achieved at the each groove in the grooved mode. This electrospray system was applied to the diffusion combustion. It is the first step to discover the diffusion combustion characteristics of the electrospray. In case of the single grooved nozzle electrospray, the diffusion flames are occurred at each jet of grooved mode and they are quite stable. The exhaust gas analysis was indicated that there is the critical point which can make very stable diffusion combustion.