Journal of the Korean Society of Industry Convergence (한국산업융합학회 논문집)

The Korean Society of Industry Convergence (한국산업융합학회)
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Transient Simulation of CMOS Breakdown characteristics based on Hydro Dynamic Model

Hydro Dynamic Model을 이용한 CMOS의 파괴특성의 Transient Simulation해석

  • 최원철 (하이닉스반도체 System IC 소자기술팀)
  • Received : 2001.11.05
  • Accepted : 2002.02.20
  • Published : 2002.02.28
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Abstract

In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.

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