• Title/Summary/Keyword: Density of states

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Estimation of Urban Traffic State Using Black Box Camera (차량 블랙박스 카메라를 이용한 도시부 교통상태 추정)

  • Haechan Cho;Yeohwan Yoon;Hwasoo Yeo
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.22 no.2
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    • pp.133-146
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    • 2023
  • Traffic states in urban areas are essential to implement effective traffic operation and traffic control. However, installing traffic sensors on numerous road sections is extremely expensive. Accordingly, estimating the traffic state using a vehicle-mounted camera, which shows a high penetration rate, is a more effective solution. However, the previously proposed methodology using object tracking or optical flow has a high computational cost and requires consecutive frames to obtain traffic states. Accordingly, we propose a method to detect vehicles and lanes by object detection networks and set the region between lanes as a region of interest to estimate the traffic density of the corresponding area. The proposed method only uses less computationally expensive object detection models and can estimate traffic states from sampled frames rather than consecutive frames. In addition, the traffic density estimation accuracy was over 90% on the black box videos collected from two buses having different characteristics.

Machine Tool State Monitoring Using Hierarchical Convolution Neural Network (계층적 컨볼루션 신경망을 이용한 공작기계의 공구 상태 진단)

  • Kyeong-Min Lee
    • Journal of the Institute of Convergence Signal Processing
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    • v.23 no.2
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    • pp.84-90
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    • 2022
  • Machine tool state monitoring is a process that automatically detects the states of machine. In the manufacturing process, the efficiency of machining and the quality of the product are affected by the condition of the tool. Wear and broken tools can cause more serious problems in process performance and lower product quality. Therefore, it is necessary to develop a system to prevent tool wear and damage during the process so that the tool can be replaced in a timely manner. This paper proposes a method for diagnosing five tool states using a deep learning-based hierarchical convolutional neural network to change tools at the right time. The one-dimensional acoustic signal generated when the machine cuts the workpiece is converted into a frequency-based power spectral density two-dimensional image and use as an input for a convolutional neural network. The learning model diagnoses five tool states through three hierarchical steps. The proposed method showed high accuracy compared to the conventional method. In addition, it will be able to be utilized in a smart factory fault diagnosis system that can monitor various machine tools through real-time connecting.

The Effect of Domain Wall on Defect Energetics in Ferroelectric LiNbO3 from Density Functional Theory Calculations

  • Lee, Donghwa
    • Journal of the Korean Ceramic Society
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    • v.53 no.3
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    • pp.312-316
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    • 2016
  • The energetics of defects in the presence of domain walls in $LiNbO_3$ are characterized using density-functional theory calculations. Domain walls show stronger interactions with antisite defects than with interstitial defects or vacancies. As a result, antisite defects act as a strong pinning center for the domain wall in $LiNbO_3$. Analysis of migration behavior of the antisite defects across the domain wall shows that the migration barrier of the antisite defects is significantly high, such that the migration of antisite defects across the domain wall is energetically not preferable. However, further study on excess electrons shows that the migration barrier of antisite defects can be lowered by changing the charge states of the antisite defects. So, excess electrons can enhance the migration of antisite defects and thus facilitate domain wall movement by weakening the pinning effect.

Derivation of The New Type of Mean Density Approximation (NTMDA) Using Molecular Dynamics Method (분자동력학법(Molecular Dynamics)을 이용한 새로운 평균밀도근사법(NTMDA)의 유도)

  • Kwon, Yong Jung
    • Journal of Industrial Technology
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    • v.10
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    • pp.9-13
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    • 1990
  • The approximation of the radial distribution functions(RDF) of mixture plays an important role in deriving the mixing rules for the corresponding states principle(CSP). The mean density approximation(MDA), one of the most successful approximations, fails to predict the radial distribution functions when the size ratio in terms of the Lennard-Jones size parameters is greater than 1.5. To get a better prediction of important structural integrals over the radial distribution functions that arise in the asymmetrical attraction contribution of the perturbaton theory, the new type of mean density approximation(NTMDA) is proposed. With this NTMDA, quite reliable results for those integrals for systems with comparatively large ratio of the size parameters are obtained.

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Rayleigh-Ritz optimal design of orthotropic plates for buckling

  • Levy, Robert
    • Structural Engineering and Mechanics
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    • v.4 no.5
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    • pp.541-552
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    • 1996
  • This paper is concerned with the structural optimization problem of maximizing the compressive buckling load of orthotropic rectangular plates for a given volume of material. The optimality condition is first derived via variational calculus. It states that the thickness distribution is proportional to the strain energy density contrary to popular claims of constant strain energy density at the optimum. An engineers physical meaning of the optimality condition would be to make the average strain energy density with respect to the depth a constant. A double cosine thickness varying plate and a double sine thickness varying plate are then fine tuned in a one parameter optimization using the Rayleigh-Ritz method of analysis. Results for simply supported square plates indicate an increase of 89% in capacity for an orthotropic plate having 100% of its fibers in $0^{\circ}$ direction.

The Stress Dependence of Trap Density in Silicon Oxide

  • Kang, C. S.
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.37 no.2
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    • pp.17-24
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    • 2000
  • In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform new both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of 1011~1021[states/eV/cm2] after a stress voltage. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

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Core-hole Effect on Partial Electronic Density of State and O K-edge x-ray Raman Scattering Spectra of High-Pressure SiO2 Phases (전자-정공 효과(Core-Hole Effect) 적용에 따른 SiO2 고압상들의 전자구조 및 O K-edge X-선 Raman 산란 스펙트럼 계산 결과 분석)

  • Khim, Hoon;Yi, Yoo Soo;Lee, Sung Keun
    • Journal of the Mineralogical Society of Korea
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    • v.30 no.2
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    • pp.59-70
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    • 2017
  • $SiO_2$ is one of the most abundant constituents of the Earth's crust and mantle. Probing its electronic structures at high pressures is essential to understand their elastic and thermodynamic properties in the Earth's interior. The in situ high-pressure x-ray Raman scattering (XRS) experiment has been effective in providing detailed bonding transitions of the low-z materials under extreme compression. However, the relationship between the local atomic structures and XRS features at high pressure has not been fully established. The ab initio calculations have been used to overcome such experimental difficulties. Here we report the partial density of states (PDOS) of O atoms and the O K-edge XRS spectra of ${\alpha}-quartz$, ${\alpha}-cristobalite$, and $CaCl_2$-type $SiO_2$ phases calculated using ab initio calculations based on the full-potential linearized augmented plane wave (FP-LAPW) method. The unoccupied O PDOSs of the $CaCl_2$-type $SiO_2$ calculated with and without applying the core-hole effects present significantly distinctive features. The unoccupied O p states of the ${\alpha}-quartz$, ${\alpha}-cristobalite$ and $CaCl_2$-type $SiO_2$ calculated with considering the core-hole effect present similar features to their calculated O K-edge XRS spectra. This confirms that characteristic features in the O K-edge XRS stem from the electronic transition from 1s to unoccupied 2p states. The current results indicate that the core-hole effects should be taken in to consideration to calculate the precise O K-edge XRS features of the $SiO_2$ polymorphs at high pressure. Furthermore, we also calculated O K-edge XRS spectrum for $CaCl_2$-type $SiO_2$ at ~63 GPa. As the experimental spectra for these high pressure phases are not currently available, the current results for the $CaCl_2$-type $SiO_2$ provide useful prospect to predict in situ high-pressure XRS spectra.

Diagnosis on Plasma Utilized for the Deposition of SiON Thin Films (SiON 박막 증착에 사용된 플라즈마에 대한 진단)

  • 김기현;김현석;성만영;김상식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.1
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    • pp.11-18
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    • 2003
  • In this study we attempted to diagnose the states and properties of plasma generated while depositing SiON thin films using PECVD (Plasma enhanced chemical vapor deposition). The temperature and density of electron gases formed in a PECVD chamber were measured by Langmuir probe method. Their values were also estimated under some assumptions we made in this work. Comparison between experimental and theoretical values of the temperature and density of electron gases was made. The experimental and estimated results revealed that, as RF Power gets higher, the electron density linearly increases, but that the electron temperature does not vary.

Electrical Properties and Dielectric Characteristics CCT-doped Zn/Pr-based Varistors with Sintering Temperature

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.3
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    • pp.80-84
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    • 2009
  • The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

A Study on the Shape-Determination for Tensegrity Unit-Structures (텐세그러티 단위 구조의 형상 결정에 관한 연구)

  • Ko, Kwang-Ung;Kwun, Ik-No;Kwun, Taek-Jin
    • Journal of Korean Association for Spatial Structures
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    • v.2 no.2 s.4
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    • pp.69-76
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    • 2002
  • The basic systems of spatial structures such as shells, membranes, cable-nets and tensegrity structures have been developed to create the large spaces without column. But there are some difficulties concerning structural stability, surface formation and construction method. Tensegrity systems are flexible structures which are reticulated spatial structures composed of compressive members and cables. The rigidification of tensegrity systems is related to selfstress states which can be achieved only when geometrical and mechanical requirements are simultaneously satisfied. In this paper, the force density method allowing form-finding for tensegrity systems is presented. And various modules of unit-structures are investigated and discussed using the force density method. Also, a model of double-layered single curvature arch with quadruplex using supplementary cable is presented.

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