• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.6
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• pp.443-453
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• 2009

The Rayleigh-Taylor instability, the bubble rising in both partially and fully filled containers and the droplet splash are simulated by an in-house solution code(PowerCFD), which are typical benchmark problems among multiphase flows with material interface due to density difference. The present method(code) employs an unstructured cell-centered method based on a conservative pressure-based finite-volume method with interface capturing method(CICSAM) in a volume of fluid(VOF) scheme for phase interface capturing. The present results are compared with other numerical solutions found in the literature. It is found that the present method simulates efficiently and accurately complex free surface flows such as multiphase flows with material interface due to both density difference and instability.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.645-647
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• 2008

In this paper, we analyzed interface trap density between pentacene and PVP and SiO2 gate dielectric by using high-low C-V characteristics. The interface trap density was $10^{13}\;cm^{-2}eV^{-1}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.346-349
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• 1988

Conductance technique is the moat accurate method and gives more detailed information about interface of the MIS structure than other methods. With the measurement of the equivalent parallel conductance and capacitance, the characterization of Si-SiN interface is developed. The interface state density of Si-SiN is obtained by $8{\times}10^{11}$ - $6{\times}10^{12}(eV^{-1}cm^{-2}$). After the positive B-T stress is performed on the sample, the interface state density gets increased. The interface state density is not effected by the D.C. stress.

• Journal of the Optical Society of Korea
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• v.20 no.3
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• pp.427-430
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• 2016

The effect of the liquid density difference on interface shape of a double-liquid lens is analyzed in detail. The expressions of interface shape of two liquids with liquid density difference are analyzed and fitted with “even asphere”. The imaging analysis of the aspheric interface shape of a double-liquid lens is presented. The results show that the density difference of two liquids can cause the interface to be an aspheric surface, which can improve the image quality of a double-liquid lens. The result provides a new selection for the related further research and a wider application field for liquid lenses.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.118-123
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• 2018

5 nm-thick $SiO_2$ layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of $121^{\circ}C$. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at $250^{\circ}C$ for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from $3.110{\times}10^{-5}A/cm^2$ after NAOS 5 hours with PMA treatment, although the $SiO_2$ layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species ($Si^{1+}$, $Si^{2+}$ and $Si^{3+}$) in $SiO_x$ transition layers as well as the interface state density ($D_{it}$) in $SiO_2/Si$ interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

• Geomechanics and Engineering
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• v.20 no.4
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• pp.299-312
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• 2020

The aim of this paper was to investigating the effects of soil relative density, construction materials roughness, oil type (gasoil, crude oil, and used motor oil), and oil content on the internal and interface shear behavior of sand with different construction materials by means of a modified large direct shear test apparatus. Tests conducted on the soil-soil (S-S), soil-rough concrete (S-RC), soil-smooth concrete (S-SC), and soil-steel (S-ST) interfaces and results showed that the shear strength of S-S interface is always higher than the soil-material interfaces. Internal and interface friction angles of sand beds increased by increase in relative density and decreased by increasing oil content. The oil properties (especially viscosity) played a major role in interface friction behavior. Despite the friction angles of contaminated sands with viscous fluids drastically decreased, it compensated by the apparent cohesion and adhesion developed between the soil grains and construction materials.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.4
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• pp.56-61
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• 2015

Ideal and stretch-out C-V curve were shown at high frequency using SiGe p-FinFET simulation. Average interface trap density can be extracted by the difference of voltage axis on ideal and stretch-out C-V curve. Also, interface trap density(Dit) was extracted by Terman's method that uses the same stretch-out of C-V curve with interface trap characteristic, and average interface trap density was calculated at same energy level. Comparing the average interface trap density, which was found by method using difference of voltage, with Terman's method, it was verified that the two methods almost had the same average interface trap density.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.340-340
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• 2012

최근 MOS 소자들이 게이트 산화막을 Mono-layer가 아닌 Multi-Layer을 사용하는 추세이다. Bulk와 High-k물질간의 Dangling Bond를 줄이기 위해 Passivation 층을 만드는 것을 예로 들 수 있다. 이러한 Double Layer의 쓰임이 많아지면서 계면에서의 Interface State Density의 영향도 커지게 되면서 이를 측정하는 방법에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 $SiO_2$ Double Layer의 Interface State Density를 Conductance Method를 사용하여 구하는 연구를 진행하였다. Wet Oxidation과 Chemical Vapor Deposition (CVD) 공정을 이용하여 $SiO_2$ Double-layer로 증착한 후 Aluminium을 전극으로 하는 MOS-Cap 구조를 만들었다. 마지막 공정은 $450^{\circ}C$에서 30분 동안 Forming-Gas Annealing (FGA) 공정을 진행하였다. LCR meter를 이용하여 high frequency C-V를 측정한 후 North Carolina State University California Virtual Campus (NCSU CVC) 프로그램을 이용하여 Flatband Voltage를 구한 후에 Conductance Method를 측정하여 Dit를 측정하였다. 본 연구 결과 Double layer (Wet/CVD $SiO_2$)에 대해서 Conductance Method를 방법을 이용하여 Dit를 측정하는 것이 유효하다는 것을 확인 할 수 있었다. 본 실험은 앞으로 많이 쓰이고 측정될 Double layer (Wet/CVD $SiO_2$)에 대한 Interface State Density의 측정과 분석에 대한 방향을 제시하는데 도움이 될 것이라 판단된다.

• 한국전산유체공학회:학술대회논문집
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• 2008.03b
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• pp.572-575
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• 2008

Two-dimensional multiphase flows due to density difference such as the Rayleigh-Taylor instability problem and the droplet splash are simulated by an in-house solution code(PowerCFD). This code employs an unstructured cell-centered method based on a conservative pressure-based finite-volume method with interface capturing method in a volume of fluid(VOF) scheme for phase interface capturing. The present results are compared with other numerical solutions found in the literature. It is found that the present code simulates complex free surface flows such as multiphase flows due to density difference efficiently and accurately.