• Transactions on Electrical and Electronic Materials
• /
• v.10 no.5
• /
• pp.165-168
• /
• 2009

Transparent and conducting ITO/Cu/ITO multilayered films were deposited by magnetron sputtering on unheated polycarbonate (PC) substrates. The thickness of the Cu intermediate film was varied from 5 to 20 nm. Changes in the microstructure and optoelectrical properties of ITO/Cu/ITO films were investigated with respect to the thickness of the Cu intermediated layer. The optoelectrical properties of the films were significantly influenced by the thickness of the Cu interlayer. The sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm films had a sheet resistance of $36{\Omega}$/Sq. and an optical transmittance of 67% (contain substrate) at a wavelength of 550 nm, while the ITO 50 nm/Cu 20 nm/ITO 30 nm films had a sheet resistance of $70{\Omega}$/Sq. and an optical transmittance of 36%. The electrical and optical properties of ITO/Cu/ITO films were determined mainly by the Cu film properties. From the figure of merit, it is concluded that the ITO/Cu/ITO films with a 5 nm Cu interlayer showed the better performance in transparent conducting electrode applications than the conventional ITO films.

• Journal of the Korean Electrochemical Society
• /
• v.10 no.1
• /
• pp.14-19
• /
• 2007

The corrosion and passivation of copper was investigated with the copper rotating disk electrode(Cu-RDE) in borate buffer solution. It has been observed with the mixed potential theory that the corrosion potential for the rotation rate increase under the convective diffusion condition was increased. It was suggested that the chemical intermediates and product 13. the copper oxidation were $Cu(OH)_{ads},\;{Cu(OH)_2}^-,\;Cu_2O,\;Cu(OH)_2,\;and\;CuO$.

• Journal of Electrochemical Science and Technology
• /
• v.2 no.3
• /
• pp.136-142
• /
• 2011

$Li_4Ti_5O_{12}$ is prepared through a solid-state reaction between $Li_2CO_3$ and anatase $TiO_2$ for applications in lithium-ion batteries. The rate capability is measured and the electrode polarization is analyzed through the galvanostatic intermittent titration technique (GITT). The rate characteristics and electrode polarization are highly sensitive to the amount of carbon loading. Polarization of the $Li_4Ti_5O_{12}$ electrode continuously increases as the reaction proceeds in both the charge and discharge processes. This relation indicates that both electron conduction and lithium diffusion are significant factors in the polarization of the electrode. The transition metal (Cu, Ni, Fe) ion added during the synthesis of $Li_4Ti_5O_{12}$ for improving the electrical conductivity also greatly enhances the rate capability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.12
• /
• pp.988-991
• /
• 2011

We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different device structure as a bottom and top contact FET. Also, we used a $SiO_2$ as a gate insulator and analyzed using a current-voltage (I-V) characteristics of the bottom and top contact CuPc FET device. In order to discuss the channel formation, we were observed the capacitance-gate voltage(C-V) characteristics of the bottom and top contact CuPc FET device.

• Korean Journal of Materials Research
• /
• v.14 no.1
• /
• pp.46-51
• /
• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• Macromolecular Research
• /
• v.14 no.1
• /
• pp.38-44
• /
• 2006

Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered, organic, light-emitting diode (OLEOs). The well-stacked CuPc layer increased the stability and efficiency of the devices. Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were performed to obtain a stacked-CuPc layer; the former increased the stacking density of the CuPc molecules and the alignment of the CuPc film. Thermal annealing at about 100$^{circ}C$ increased the current flow through the CuPc layer by over 25$\%$. Surface roughness decreased from 4.12 to 3.65 nm and spikes were lowered at the film surface as well. However, magnetic field treatment during deposition was less effective than thermal treatment. Eventually, a higher luminescence at a given voltage was obtained when a thermally-annealed CuPc layer was placed in the present, multi-layered, ITO/CuPc/NPD/Alq3/LiF/AI devices. Thermal annealing at about 100$^{circ}C$ for 3 h produced the most efficient, multi-layered EL devices in the present study.

• Applied Science and Convergence Technology
• /
• v.23 no.1
• /
• pp.14-26
• /
• 2014

Copper is an important component from coin metal to electronic wire, integrated circuit, and to lithium battery. Copper oxides, mainly including $Cu_2O$ and CuO, are important semiconductors for the wide applications in solar cell, catalysis, lithium-ion battery, and sensor. Due to their low cost, low toxicity, and easy synthesis, copper oxides have received much research interest in recent year. Herein, we review the crystallization of copper oxides by designing various chemical reaction routes, for example, the synthesis of $Cu_2O$ by reduction route, the oxidation of copper to $Cu_2O$ or CuO, the chemical transformation of $Cu_2O$ to CuO, the chemical precipitation of CuO. In the designed reaction system, ligands, pH, inorganic ions, temperature were used to control both chemical reactions and the crystallization processes, which finally determined the phases, morphologies and sizes of copper oxides. Furthermore, copper oxides with different structures as electrode materials for lithium-ion batteries were also reviewed. This review presents a simple route to study the reaction-crystallization-performance relationship of Cu-based materials, which can be extended to other inorganic oxides.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.2
• /
• pp.44-48
• /
• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• 한국초전도학회:학술대회논문집
• /
• v.10
• /
• pp.165-168
• /
• 2000

We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. A low-dielectric Sr$_2$AlTaO$_6$(SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa$_2$Cu$_3$O$_{7-x}$ (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the edge of the YBCO base electrode using high energy ion-beam treatment prior to deposition of the YBCO counter electrode. We investigated the effects of high energy ion-beam treatment, annealing, and counter electrode deposition temperature on the characteristics of the interface-controlled Josephson junctions. The junction parameters such as T$_c$, I$_c$c, R$_n$ were measured and discussed in relation to the barrier layer depending on the process parameters.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.68-68
• /
• 2010

Electroluminescence (EL) characteristics of green-emission ZnS:Cu,Cl-based ac-type inorganic powder electroluminescent structures were examined by inserting carbon nanotubes (CNTs) into or next to the dielectric layer. For the top-emission type EL structure, where the luminescent light was emitted from the top of the structure, was fabricated by assembling in order, a top electrode, an emitting layer, a dielectric layer, and a bottom electrode from the top. $BaTiO_3$ powder mixed with CNTs was used as a dielectric layer or CNTs were deposited between the bottom electrode and $BaTiO_3$ dielectric layer in order to improve the role of the dielectric layer in the structure. Luminance of an EL structure with CNTs inclusion was greatly enhanced possibly due to the high dielectric constant in the dielectric layer of $BaTiO_3$/CNTs, which is one of hot research topics utilizing nano-objects for intensifying dielectric constant and reducing dielectric loss at the same time. A variation on the CNTs themselves and their inclusion methods in the dielectric layer has been exhorted, and the underlying mechanism for the role of CNTs in the EL structure will be explained in the poster. In order to extend the flexibility of EL devices, EL devices were fabricated on the paper substrate and their performance was compared other EL devices on the plastic-based substrate.