Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of CuPc FET Using Two-type Electrode Structure

두 가지 타입의 CuPC FET 전극 구조에서의 전기적 특성

  • Lee, Won-Jae (Department of Electronic Engineering, Kyungwon University) ;
  • Lee, Ho-Shik (Department of Hospital Service and Biomedical Science, Dongshin University)
  • Received : 2011.11.04
  • Accepted : 2011.11.18
  • Published : 2011.12.01
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Abstract

We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different device structure as a bottom and top contact FET. Also, we used a $SiO_2$ as a gate insulator and analyzed using a current-voltage (I-V) characteristics of the bottom and top contact CuPc FET device. In order to discuss the channel formation, we were observed the capacitance-gate voltage(C-V) characteristics of the bottom and top contact CuPc FET device.

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References

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