• Journal of Powder Materials
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• v.11 no.5
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• pp.421-426
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• 2004

The microstructure and mechanical property of hot-pressed $Al_2O_3/Cu$ composites with a different temperature for atmosphere changing from H$_{2}$ to Ar have been studied. When atmosphere-changed from H$_{2}$ to Ar gas at 145$0^{\circ}C$, the hot-pressed composite was characterized by inhomogeneous microstructure and low fracture strength. On the contrary, when atmosphere-changed at low temperature of 110$0^{\circ}C$ the composite showed more homogeneous microstructure, higher fracture strength and smaller deviation in strength. Based on the thermodynamic consideration and microstructural analysis, it was interpreted that the Cu wetting behavior relating to the formation of CuAlO$_{2}$ is probably responsible for strong dependence of microstructure on atmosphere changing temperature. The reason for a strong sensitivity of fracture strength and especially of its deviation to atmosphere changing temperature was explained by the microstructural inhomogeneity and by the role of CuAlO$_{2}$ phase on the interfacial bonding strength.

• Journal of Korea Foundry Society
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• v.34 no.4
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• pp.130-135
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• 2014

Efforts have been made to develop new silicon-free aluminum casting alloys that possess high electrical and thermal conductivity. In this research Al-Fe-Cu-Mg alloys with various Cu and Mg contents were investigated for their various properties. As the Cu or Mg content was increased, the electrical conductivity gradually decreased, while the tensile strength of the Al-Fe-Cu-Mg alloy tended to be improved. It was found that fluidity was generally inversely proportional to the Cu content, but the alloys containing 1%Mg showed considerably low fluidity, regardless of the Cu content.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.16.1-16.1
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• 2007

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.225-229
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• 2009

The front metal contact is one of the most important element influences in efficiency in the silicon solar cell. First of all selective of the material and formation method is important in metal contacts. Commercial solar cells with screen-printed contacts formed by using Ag paste process is simple relatively and mass production is easy. But it suffer from a low fill factor and a high shading loss because of high contact resistance. Besides Ag paste too expensive. because of depends income. This paper applied for Ni/Cu metallization replace for paste of screen printing front metal contact. Low cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the screen-printed Ag contacts. Ni has been proposed as a suitable silicide for the salicidation process and is expected to replace conventional silicides. Copper is a promising material for the electrical contacts in solar cells in terms of conductivity and cost. In experiments Ni/Cu metal contact applied same grid formation of screen-printed solar cell. And it has variation of different grid spacing. It was verified that the wide spacing of grid finger could increase the series resistance also the narrow spacing of grid finger also implies a grid with a higher density of grid fingers. Through different grid spacing found alteration of efficiency.

• Clean Technology
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• v.19 no.3
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• pp.287-294
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• 2013

The $NH_3$-selective catalytic reduction (SCR) reaction of NO with excess of oxygen were systematically investigated over Cu-zeolite and Fe-zeolite catalysts. Cu-zeolite and Fe-zeolite catatysts to adapt the SCR technology for mobile diesel engines were prepared by liquid ion exchange and incipient wetness impregnation of $NH_4$-BEA and $NH_4$-ZSM-5 zeolites. The catalysts were characterized by BET, XRD, FE-TEM (field emission transmission electron microscopy) and SEM/EDS. The SCR examinations performed under stationary conditions showed that the Cu-exchanged BEA catalyst revealed pronounced performance at low temperatures of $200{\sim}250^{\circ}C$. With respect to the Fe-zeolite catalyst, the Cu-zeolite catalyst showed a higher activity in the SCR reaction at low temperatures below $250^{\circ}C$. BEA zeolite based catalyst exhibited good activity in comparison with ZSM-5 zeolite based catalyst at low temperatures below $250^{\circ}C$.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.503-508
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• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.53-57
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• 2013

Although the lowering of Ag content in Sn-3.0Ag-0.5Cu is known to improve the mechanical shock reliability of the solder joint, it is also known to be detrimental to the solderbility. In this study, the quaternary alloying effect of In and the minor alloying effects of Mn and Pd on the solderability, thermal cycling and mechanical shock reliabilities of the low Ag content Sn-1.2Ag-0.7Cu solder were investigated using board-level BGA packages. The solderability of Sn-1.2Ag-0.7Cu-0.4In was proved to be comparable to that of Sn-3.0Ag-0.5Cu but its thermal cycling reliability was inferior to that of Sn-3.0Ag-0.5Cu. While the 0.03 wt% Pd addition to the Sn-1.2Ag-0.7Cu-0.4In decreased the solderability and reliabilities of solder joint, the 0.1 wt% Mn addition was proved to be beneficial especially for the mechanical shock reliability compared to those of Sn-3.0Ag-0.5Cu and Sn-1.0Ag-0.5Cu compositions. It was considered to be due that the Mn addition decreased the Young's modulus of low Ag content Pb-free solders.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.29-33
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• 2012

The demand for 3D wafer level integration has been increasing significantly. Although many technical challenges of wafer stacking are still remaining, wafer stacking is a key technology for 3D integration due to a high volume manufacturing, smaller package size, low cost, and no need for known good die. Among several new process techniques Cu-to-Cu wafer bonding is the key process to be optimized for the high density and high performance IC manufacturing. In this study two main challenges for Cu-to-Cu wafer bonding were evaluated: misalignment and bond quality of bonded wafers. It is demonstrated that the misalignment in a bonded wafer was mainly due to a physical movement of spacer removal step and the bond quality was significantly dependent on Cu bump dishing and oxide erosion by Cu CMP.

• Macromolecular Research
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• v.13 no.5
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• pp.391-396
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• 2005

The polymerization of methyl methacrylate (MMA) was carried out using CuBr/bidentate phosphorus ligand catalyst systems. MMA polymerization with CuBr/phosphine-phosphinidene (PP) exhibited high conversion ($\~80\%$) in 5 h at $90^{\circ}C$ along with a linear increase of ln($[M]_0/[M]$) versus time, indicating constant concentration of the propagating radicals during the polymerization. The molecular weight of the prepared PMMA tended to increase with conversion, suggesting the living polymerization characteristic of the system. On the other hand, a large difference between the measured and theoretical molecular weight and a broad molecular weight distribution were observed, implicating possible incomplete control over the polymerization. This may have been caused by the low deactivation rate constant ($\kappa_{deact}$) of the system. The low $\kappa_{deact}$, would result in irreversible generation of radicals instead of reversible activation/deactivation process of ATRP. Polymerizations performed at different ligand to CuBr ratios and different monomer to initiator ratios did not afford better control over the polymerization, suggesting that the controllability of CuBr/phosphorus ligand system for ATRP is inherently limited.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.