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Ag and Cu Precipitation in Multi-Layer Chip Inductors Prepared with V2O5 Doped NiCuZn Ferrites

V2O5 도핑된 NiCuZn 페라이트로 제조된 칩인덕터에서의 Ag/cu 석출

  • Je, Hae-June (Materials Sci. & Tech. Div., Korea Institute of Sci. & Tech.) ;
  • Kim, Byung-Kook (Materials Sci. & Tech. Div., Korea Institute of Sci. & Tech.)
  • 제해준 (한국과학기술연구원 재료연구부) ;
  • 김병국 (한국과학기술연구원 재료연구부)
  • Published : 2003.08.01

Abstract

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

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