• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.51-51
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• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1018-1022
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• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340 V breakdown voltage. The channel thickness was 3 urn and the channel doping concentration is $1e17\;cm^{-3}$. And we carried out thermal characteristics, too.

• 전기전자학회논문지
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• 제14권4호
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• pp.277-282
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• 2010

본 논문에서는 차세대 전력반도체인 화합물 반도체 소자중 ZnO 전력소자에 대하여 모델링을 수행하였다. 화합물 전력 반도체 소자는 와이드 밴드 갭 소자로서 열 특성이 우수해 자동차 및 계통연계형 인버터의 차세대 핵심소자로 인정받고 있다. 모델링 결과 에피 두께가 3um, 도핑농도는 $1e17cm^{-3}$일때 내압 340V 정도 얻을 수 있었으며, 관련 I-V특성 등을 평가하였다. 실제 소자로 제작된다면 300V이내의 산업 응용에 충분히 활용할 수 있을 것으로 판단된다

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.67-67
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• 2011

Compound semiconductor/CNTs composites have shown considerably improved efficiency improvement in photovoltaic devices, which is often attributed to two different factors. One is the formation of efficient electronic energy cascade structures. The other effect of CNTs on the performance of photovoltaic devices is the decrement of interfacial resistance. The interfacial resistances at n-type/ p-type materials and/or n-type materials/TCO electrode are reduced by an outstanding electrical property of CNTs. In addition to the effects of CNTs, we report the third reason for increment of efficiency in photovoltaic devices by CNT's well-known electrical field enhancement effects. The improved ${\beta}$ values in reverse-FE currents of CIGS electrode with SWNTs layers indicate the enhancement of electrical field in photovoltaic devices, which implies the acceleration of the electron transfer rate in the cell. Due to the formation of an efficient electronic energy cascade structure and the decrease of the interfacial resistance as well as the improvement of the electrical field in the photovoltaic devices, the power conversion efficiency of electrochemically deposited superstrate-type CIGS solar cells was increased 24.3% in the presence of SWNTs and showed 10.40% conversion efficiency.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.713-717
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• 2011

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

• Journal of Power Electronics
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• 제13권6호
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• pp.1080-1089
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• 2013

In this paper, the superposition principle of a heat sink temperature rise is verified based on the mathematical model of a plate-fin heat sink with two mounted heat sources. According to this, the distributed coupling thermal impedance matrix for a heat sink with multiple devices is present, and the equations for calculating the device transient junction temperatures are given. Then methods to extract the heat sink thermal impedance matrix and to measure the Epoxy Molding Compound (EMC) surface temperature of the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) instead of the junction temperature or device case temperature are proposed. The new thermal impedance model for the power converters in Switched Reluctance Motor (SRM) drivers is implemented in MATLAB/Simulink. The obtained simulation results are validated with experimental results. Compared with the Finite Element Method (FEM) thermal model and the traditional thermal impedance model, the proposed thermal model can provide a high simulation speed with a high accuracy. Finally, the temperature rise distributions of a power converter with two control strategies, the maximum junction temperature rise, the transient temperature rise characteristics, and the thermal coupling effect are discussed.

• Smart Structures and Systems
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• 제14권4호
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• pp.617-641
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• 2014

The energy constraint is still a common issue for the practical application of wireless sensors, since they are usually powered by batteries which limit their lifetime. In this paper, a practical compound energy efficiency strategy is proposed and realized in the implementation of a real time wireless sensor platform. The platform is intended for wireless structural monitoring applications and consists of three parts, wireless sensing unit, base station and data acquisition and configuration software running in a computer within the Matlab environment. The high energy efficiency of the wireless sensor platform is achieved by a proposed adaptive radio transmission power control algorithm, and some straightforward methods, including adopting low power ICs and high efficient power management circuits, low duty cycle radio polling and switching off radio between two adjacent data packets' transmission. The adaptive transmission power control algorithm is based on the statistical average of the path loss estimations using a moving average filter. The algorithm is implemented in the wireless node and relies on the received signal strength feedback piggybacked in the ACK packet from the base station node to estimate the path loss. Therefore, it does not need any control packet overheads. Several experiments are carried out to investigate the link quality of radio channels, validate and evaluate the proposed adaptive transmission power control algorithm, including static and dynamic experiments.

• 전기학회논문지P
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• 제58권4호
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• pp.592-596
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• 2009

DAFC(direct alcohol fuel cell) takes the same structure and operational principle with PEMFC(Proton exchange membrane fuel cell). However, DAFC, which uses liquid alcohol instead of hydrogen as fuel, is able to be used as a portable power for small-scaled electronic devices such as MP3, PMP, and mobile phone because alcohol is quite convenient steady-state compound to carry and store it. This paper presents the OCV(open circuit voltage) characteristics of the cases which are alcohol species and different weight rate of ethanol, respectively. The OCV of methanol fuel cell is slightly higher 0.2V than ethanol one, and 8% wt. rate ethanol is rated as the most appropriate fuel for DAFC.

• 대한기계학회논문집A
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• 제35권12호
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• pp.1537-1542
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• 2011

본 논문은 복합형 하이브리드 굴삭기를 위한 동력전달계 제어기법에 대하여 기술하였다. 하이브리드 굴삭기는 기존 굴삭기의 동력전달계를 하이브리드화 하여 연비향상 및 배출가스 저감을 목표로 개발되고 있다. 특히 복합형 하이브리드 굴삭기는 유압시스템의 일부를 전기시스템으로 대체하여 낮은 유압효율로 인한 에너지 손실을 줄일 수 있도록 구성되어 있다. 해당 굴삭기의 하이브리드 동력 제어기는 동력전달계의 동력 흐름을 관리하여 굴삭기의 연비를 향상 시키고, 슈퍼 커패시터의 충전량을 적절한 범위에서 유지하며, 기존 굴삭기에 준하는 성능을 유지하여야 한다. 이를 위하여 본 논문에서는 슈퍼 캐패시터의 충전량 기반의 서모스탯(Thermostat)형 제어기와 실시간 최적해를 이용한 ECMS 제어기를 설계하였으며 시뮬레이션을 통하여 그 성능을 검증하였다. 시뮬레이션 결과, 하이브리드 굴삭기의 연비가 대략 20% 이상 향상될 것으로 기대되며, 특히 등가 연료 개념을 이용한ECMS 제어기의 성능이 서모스탯(Thermostat)형 제어기에 비해 연비 및 슈퍼 커패시터 충전량 관리 측면에서 보다 향상된 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.236-238
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• 1997

A cellular power amplifier using an APCVD(Atmospheric Pressure Chemical Vapor Deposition)-grown SiGe base HBT of ETRI has been designed with a linear simulation CAD. The Si/SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0 GHz and a maximum oscillation frequency(f$_{max}$) of 16.1 GHz with a pad de-embedding A packaged power Si/SiGe HBT with an emitter area of 2$\times$8$\times$80${\mu}{\textrm}{m}$$^2$typically shows a f$_{T}$ of 4.7 GHz and a f$_{max}$ of 7.1 GHz at a collector current (Ic) of 115 mA. The power amplifier exhibits a Forward transmission coefficient(S21) of 13.5 dB, an input and an output reflection coefficients of -42 dB and -45 dB respectively. Up to now the III-V compound semiconductor devices hale dominated microwave applications, however a rapid progress in Si-based technology make the advent of the Si/SiGe HBT which is promising in low to even higher microwave range because of lower cost and relatively higher reproducibility of a Si-based process.ess.ess.