Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optimal Design of GaN Power MOSFET Using Al2O3 Gate Oxide

Al2O3 게이트 절연막을 이용한 GaN Power MOSFET의 설계에 관한 연구

  • Nam, Tae-Jin (Department of Photovoltaic Engineering, Far East University) ;
  • Chung, Hun-Suk (Department of Photovoltaic Engineering, Far East University) ;
  • Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
  • Received : 2011.06.20
  • Accepted : 2011.08.24
  • Published : 2011.09.01
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Abstract

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

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References

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