• 유공압시스템학회논문집
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• 제5권4호
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• pp.17-25
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• 2008

This study presents an analytical model of the pneumatic circuit of an air suspension system to analyze the characteristics of vehicle height control. The analytical model was developed through the co-simulation of Simulink(air spring) and HyPneu(pneumatic circuit). Variant effective area of air spring and flow coefficients of pneumatic valves were estimated experimentally prior to the system test, and utilized in simulation. One-comer test apparatus was established using the components of commercial air suspension products. The results of simulation and experiment were so close that the proposed analytical model in this study was validated. However the frictional loss of conduit and heat dissipation which were ignored in this study need to be considered in future study. As an application example of proposed analytical model, an alternative pneumatic circuit of air suspension to conventional WABCO circuit was evaluated. The comparison of simulation results of WABCO circuit and alternative circuit show that proposed analytical model of co-simulation in this study is useful for the study of pneumatic system of automotive air suspension.

• 한국시뮬레이션학회논문지
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• 제4권2호
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• pp.41-60
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• 1995

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among circuit design engineers for motor drive and power converter applications. IGBT devices(International Rectifier, Proposed proposed model etc) have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirememts and high current density capability. When designing circuit and systems that utilize IGBTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The voltage rise rate at turn-off for inductive loads varies significantly for IGBTs with different base life times, and this rate of rise is important in determing the voltage overshoot for a given series resistor-inductor load circuit. Excessive voltage overshoot is potentially destructive, so a snubber protection circuit may be required. The protection circuit requirements are unique for the IGBT and can be examined using the model. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1099-1105
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• 2006

In this paper, the equivalent circuit model of a Rosen-type multilayer piezoelectric transformer(MPT) has been proposed based on the Mason's equivalent circuit model and the principle of single layer piezoelectric plate. From the piezoelectric direct and converse effects, the symbolic expressions between the electric inputs and outputs of the MPT have been derived from the equivalent circuit model. A simplified equivalent circuit model of the MPT whose driving part has a single input form has been proposed. The symbolic expressions of the driving part have been derived from the simplified equivalent circuit model and the model was compared with the multi-input equivalent circuit model through the simulation. In the comparisons between the simulation results and the experimental data, output voltage is 630 Vp-p in case of 11-layered MPT and 670 Vp-p for 13-layered MPT over the experiment range. As the load resistance increases, output voltage increases and saturates over $300k{\Omega}$ and the resonant frequency changes from 102 kHz to 103 kHz. The simulation and the experimental results agree well over different load resistances and frequencies.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2015년도 추계학술대회 논문집
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• pp.9-10
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• 2015

EI core inductor in power electronic circuit simulation is usually assumed as linear by using matrix model. However, nonlinear magnetic characteristics such as B-H characteristic are also important for the accurate simulation of the circuit behavior. To model nonlinear magnetic characteristics of EI core inductor with only DC bias table, this paper presents a method in PLECS simulation tool which is a commercially available simulation tool for power electronics circuit analysis. Comparing with ideal matrix model, the simplification and accuracy are improved by this modeling method. Also, compared to analysis by FEM, it is much simpler, faster and easier to simulate with power electronics circuit. Validation of the proposed model was verified by simulation and experiment results.

• Journal of Power Electronics
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• 제17권2호
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• pp.561-569
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• 2017

Power converter design requires simulation accuracy. In addition to the requirement of accurate models of power semiconductor devices, this paper highlights the role of considering a very good description of the converter circuit layout for an accurate simulation of its electrical behavior. This paper considers a simple experimental circuit including one switching cell where a MOSFET transistor controls the diode under test. The turn-off transients of the diode are captured, over which the circuit wiring has a major influence. This paper investigates the necessity for accurate modeling of the experimental test circuit wiring and the MOSFET transistor. It shows that a simple wiring inductance as the circuit wiring representation is insufficient. An adequate model and identification of the model parameters are then discussed. Results are validated through experimental and simulation results.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2007년도 학술대회
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• pp.27-30
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• 2007

This paper deals with an equivalent circuit model for RF passive components. Rational functions are obtained from the frequency responses of EM simulation by using Foster canonical partial fraction expressions. The Vector Fitting(VF) and the Adaptive Frequency Sampling(AFS) scheme are also implemented to obtain the rational functions. A passivity enforcement algorithm is applied to ensure the stability of the equivalent circuit model. In order to verify the schemes, S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip line structure with 3 slots in ground.

• 한국자동차공학회논문집
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• 제22권2호
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• pp.7-16
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• 2014

Vehicle industry is developing research for producing high quality injection molded product. The main objective of this study is providing information about hydraulic system for researchers who are involved in the other fields, not hydraulic field. Another objective is developing hydraulic circuit simulation model which analyzes the cause of several destabilizing elements related to quality of injection molded products. Injection molded product consists of a lot of hydraulic parts, and there are many nonlinear facts for dynamic behavior. So, we used 'SimulationX' which is specialized in hydraulic system for developing simulation model.

• Journal of information and communication convergence engineering
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• 제19권4호
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• pp.263-268
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• 2021

Although the compact capacitance model of point tunneling types of tunneling field-effect transistors (TFET) has been proposed, those of line tunneling types of TFETs have not been reported. In this study, a compact capacitance model of an L-shaped TFET (LTFET), a line tunneling type of TFET, is proposed using the previously developed surface potentials and current models of P- and L-type LTFETs. The Verilog-A LTFET model for simulation program with integrated circuit emphasis (SPICE) was also developed to verify the validation of the compact LTFET model including the capacitance model. The SPICE simulation results using the Verilog-A LTFET were compared to those obtained using a technology computer-aided-design (TCAD) device simulator. The current-voltage characteristics and capacitance-voltage characteristics of N and P-LTFETs were consistent for all operational bias. The voltage transfer characteristics and transient response of the inverter circuit comprising N and P-LTFETs in series were verified with the TCAD mixed-mode simulation results.

• 한국산업융합학회 논문집
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• 제5권1호
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• pp.39-43
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• 2002

In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권1호
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• pp.28-33
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• 2013

Spin-torque oscillators (STO) is a new device that can be used as a tunable microwave source in various wireless devices. Spin-transfer torque effect in magnetic multilayered nanostructure can induce precession of magnetization when bias current and external magnetic field are properly applied, and a microwave signal is generated from that precession. We proposed a semi-empirical circuit-level model of an STO in previous work. In this paper, we present a refined STO model which gives more accuracy by considering physical phenomena in the calculation of effective field. Characteristics of the STO are expressed as functions of external magnetic field and bias current in Verilog-A HDL such that they can be simulated with circuit-level simulators such as Hspice. The simulation results are in good agreement with the experimental data.