• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.10a
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• pp.39-45
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• 2000

A small camera module fabricated by including bare chip bonding methods is utilized to realize advanced mobile devices. One of the driving forces is the TOG (Tape On Glass) bonding method which reduces the packaging size of the image sensor clip. The TOG module is a new thinner and smaller image sensor module, using flip chip interconnection method with the ACP (Anisotropic Conductive Paste). The TOG production process was established by determining the optimum bonding conditions for both optical glass bonding and image sensor clip bonding lo the flexible PCB. The bonding conditions, including sufficient bonding margins, were studied. Another bonding method is the flip chip bonding method for DSP (Digital Signal Processor) chip. A new AC\ulcorner was developed to enable the short resin curing time of 10 sec. The bonding mechanism of the resin curing method was evaluated using FEM analysis. By using these flip chip bonding techniques, small camera module was realized.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2005.09a
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• pp.51-65
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• 2005

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.53-57
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• 2011

In the modern packaging technologies highly condensed metal interconnects are typically formed by highcost processes. These methods inevitably require the precise controls of mutually dependant process parameters, which usually cause the difficulty of the change in the layout design for interconnects of chip to-chip, or chip-to-substrate. In order to overcome these problems, the unique concept and methodology of self-assembly even in micro-meter scale were developed. In this report we focus on the factors which influenced the self-formed bumps by analyzing the phenomenon experimentally. In case of RMA flux, homogenous pattern was obtained in both plain surface and cross-section surface observation. By using RA flux, the phenomena were accelerated although the self-formtion results was inhomogenous. With ussage of moderate RA flux, reaction rate of the self-formation was accelerated with homogeneous pattern.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.57-64
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• 2007

New Chip-on-glass technology to attach an Si chip directly on the glass substrate of LCD panel was studied with local heating method of the Si chip by using thin film heater fabricated on the Si chip. Square-shaped Cu thin film heater with the width of $150\;{\mu}m$, thickness of $0.8\;{\mu}m$, and total length of 12.15 mm was sputter-deposited on the $5\;mm{\times}5\;mm$ Si chip. With applying current of 0.9A for 60 sec to the Cu thin film heater, COG bonding of a Si chip to a glass substrate was successfully accomplished with reflowing the Sn-3.5Ag solder bumps on the Si chip.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2006.10a
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• pp.75-91
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• 2006

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.479-480
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• 2012

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.689-690
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• 2009

• Journal of the Microelectronics and Packaging Society
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• v.14 no.2 s.43
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• pp.41-47
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• 2007

Today lots of investigations on Embedded Passive Technology using materials and chip components have been carried out. We fabricated diplexers with 1005 sized-passives, which were made by burying chips in PCB substrate and surface mounting chip on PCB. 6 passive chips (inductors and capacitors) were used for the frequency divisions of $880\;MHz{\sim}960\;MHz(GSM)$ and $1.71\;GHz{\sim}1.88\;GHz(DCS)$. Two types of diplxer were characterized with Network analyzer. The chip buried diplexer showed extra 5db loss and a little deviation of 0.6GHz at aimed frequency areas, whereas the chip mounted diplexer showed man. 0.86dB loss within GSM field and max. 0.68dB within DCS field respectively. But few degradations were observed after $260^{\circ}C$ for 80min baking and $280^{\circ}C$ for 10sec solder floating.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.155-161
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• 2018

A Si chip with the Cu/Au bumps of $100-{\mu}m$ diameter was flip-chip bonded using different anisotropic conductive adhesives (ACAs) onto the local stiffness-variant stretchable substrate consisting of polydimethylsiloxane (PDMS) and flexible printed circuit board (FPCB). The average contact resistances of the flip-chip joints processed with ACAs containing different conductive particles were evaluated and compared. The specimen, which was flip-chip bonded using the ACA with Au-coated polymer balls as conductive particles, exhibited a contact resistance of $43.2m{\Omega}$. The contact resistance of the Si chip, which was flip-chip processed with the ACA containing SnBi solder particles, was measured as $36.2m{\Omega}$, On the contrary, an electric open occurred for the sample bonded using the ACA with Ni particles, which was attributed to the formation of flip-chip joints without any entrapped Ni particles because of the least amount of Ni particles in the ACA.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.146-150
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• 2001

Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. S-parameters of on-chip and substrate were separately measured in the frequency range of 200 MHz to 20 GHz using a microwave network analyzer HP8510 and cascade probe. And the cascade transmission matrix conversion was performed. The same measurements and conversion techniques were conducted on the assembled test chip and substrate at the same frequency range. Then impedance values in ACF flip-chip interconnection were extracted from cascade transmission matrix. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of SiO$_2$filler to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. High frequency behavior of metal Au stud bumps was investigated. The resonance frequency of the metal stud bump interconnects is higher than that of ACF flip-chip interconnects and is not observed at the microwave frequency band. The extracted model parameters of adhesive flip chip interconnects were analyzed with the considerations of the characteristics of material and the design guideline of ACA flip chip for high frequency applications was provided.