• 품질경영학회지
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• 제45권2호
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• pp.293-306
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• 2017

Purpose: In this study, an optimal design level of influencing factors on semiconductor polishing process was determined to minimize flexion of both sides on wafers. Methods: First, significant interactions are determined by the stepwise regression method. ANOVA analysis on SN ratio and mean of dependent variable are performed to draw mean adjustment factors. In addition, the optimal levels of mean adjustment factors are decided by comparing means of each level of mean adjustment factors. Results: As a result of ANOVA, a mean adjustment factor was determined as a width of formed flexion on the plate. The mean of the difference has the nearest to 0 in the case when the width of formed flexion has level 2 (4mm). Conclusion: Optimal design levels of semiconductor polishing process are determined as follows; (i) load applied to the wafer carrier has a level 1 (3psi), (ii) load applied to the wafer has a level 1(3psi), (iii) the amount of slurry supplied during polishing has a level 3 (300 co/min), (iv) the width of formed flexion on the plate has level 2 (4mm).

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.203-207
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• 2008

Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials. There are many elements such as slurry, polishing pad, process parameters and conditioning in CMP process. Especially, polishing pad is considered as one of the most important consumables because this affects its performances such as WIWNU(within wafer non-uniformity) and MRR(material removal rate). In polishing pad, grooves and pores on its surface affect distribution of slurry, flow and profile of MRR on wafer. A subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure(MS) pad. MS pad is designed to have uniform structure on its surface and manufactured by micro-molding technology. And then STI CMP performances such as pattern selectivity, erosion and comer rounding are evaluated.

• 동굴
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• 제79호
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• pp.77-81
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• 2007

In this paper deals with behavior of the magnetic abrasive using Sr-Ferrite on polishing charateristiccs in a internal finishing of staninless steel pipe a tying magnetic abrasive polishing. The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision techniques and has in aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper we deals with the development of the magnetic abrasive with the use of Sr-Ferrite. In this development, abrasive grain SiC has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Sr-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only SiC abrasive and Sr-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From MACRO analysis, we found that SiC abrasive and Sr-Ferrite were strongly bonding with each other.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.131-136
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• 2000

We have investigated the slurry induced metallic contaminations of undoped and doped silicate oxides surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-orthyo-silicate glass(PE-TEOS), O3 boro-phos-pho-silicate glass(O3-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing which is due to a CMP slurry. The polished O3-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents. In addition, the polishing removal rate of PSG oxides had a linear relationship as a function of phosphorus contents.

• 한국안전학회지
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• 제23권5호
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• pp.43-48
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• 2008

The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision polishing techniques and has an aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are only few researchers in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper deals with development of the magnetic abrasive using Ba-Ferrite. In this development, abrasive grain GC and CBN has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Ba-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only GC, CBN and Ba-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From SEM analysis, we found that GC, CBN abrasive and Ba-Ferrite were strongly bonding with each other.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.247-251
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• 2004

Chemical-Mechanical Polishing(CMP) especially is becoming one of the most important ULSI processes for the 0.25m generation and beyond. And there are many elements affecting CMP performance such as slurry, pad, process parameters and pad conditioning. Among these elements the CMP pad is considered one of the most important because of its change. But the surface of the pad has irregular pores, so there is non-uniformity of slurry flow and of contact area between wafer and the pad, and glazing occurs on the surface of the pad. So we make CMP pad with micro structure using micro molding method. This paper introduces the basic concept and fabrication technique of CMP pad with micro-structure and the characteristic of polishing. Experimental results demonstrate the removal rate, uniformity, and time vs. removal rate.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.889-893
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• 2006

Chemical mechanical polishing (CMP) achieves surface planrity through combined mechanical and chemical means. The role of slurry is very important in metal CMP. Slurry used in metal CMP normally consists of oxidizers, complexing agents, corrosion inhibitors and abrasives. This paper investigates the effects of citric acid as a complexing agent for Cu CMP with $H_2O_2$. In order to study chemical effects of citric acid, X-ray photoelectron spectroscopy (XPS) was peformed on Cu sample after etching test. XPS results reveal that CuO, $Cu(OH)_2$ layer decrease but $CU/CU_2O$ layer increase on Cu sample surface. To investigate nanomechanical properties of Cu sample surface, nanoindentation was performed on Cu sample. Results of nanoindentation indicate wear resistance of Cu surface decrease. According to decrease of wear resistance on Cu surface removal rate increases from $285\;{\AA}/min\;to\;8645\;{\AA}/min$ in Cu CMP.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.787-792
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• 2005

Chemical mechanical polishing(CMP) has become the process of choice for modem semiconductor devices to achieve both local and global planarization. CMP is a complex process which depends on numerous variables such as macro, micro and nano-geometry of pad, relative velocity between pad and wafer stiffness and dampening characteristics of pad, slurry, pH, chemical components of slurry, abrasive concentration, abrasive size, abrasive shape, etc. Especially, an oxidizer of chemical components is very important remove a target material in metal CMP process. This paper introduces the effect of oxidizer such as $H_2O_2,\;Fe(NO_3)_3\;and\;KIO_3$ in slurry for tungsten which is used in via or/and plug. Finally the duplex reacting mechanism of $oxidizer(H_2O_2)$ through adding the $catalyst(Fe(NO_3)_3)$ could acquire the sufficient removal rate in tungsten CMP.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.213-217
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• 2007

Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.

• 한국표면공학회지
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• 제49권5호
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• pp.447-453
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• 2016

In this study, we intended to extend the life of electropolishing solution through the reduction of electric resistance by improving the electrolysis efficiency. The optimum conditions were obtained by half round bus bar and Taguchi method. As the main control factors in the electropolishing process, current density, polishing time, electrolyte temperature and flow rate were selected. The electrolyte temperature was the most significant to the electrolysis efficiency. The optimum conditions for the life extension of electropolishing solution were as follows: current density, $45A/dm^2$; polishing time, 6 min; electrolyte temperature, $70^{\circ}C$; flow rate, 11 L/min. As a results of ANOVA of SN ratios, it was found that the electrolyte temperature was significant factor at the 90% confidence level.