Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

A Study on Oxidizer Effects in Tungsten CMP

텅스텐 CMP에서 산화제 영향에 관한 연구

  • Published : 2005.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

Chemical mechanical polishing(CMP) has become the process of choice for modem semiconductor devices to achieve both local and global planarization. CMP is a complex process which depends on numerous variables such as macro, micro and nano-geometry of pad, relative velocity between pad and wafer stiffness and dampening characteristics of pad, slurry, pH, chemical components of slurry, abrasive concentration, abrasive size, abrasive shape, etc. Especially, an oxidizer of chemical components is very important remove a target material in metal CMP process. This paper introduces the effect of oxidizer such as $H_2O_2,\;Fe(NO_3)_3\;and\;KIO_3$ in slurry for tungsten which is used in via or/and plug. Finally the duplex reacting mechanism of $oxidizer(H_2O_2)$ through adding the $catalyst(Fe(NO_3)_3)$ could acquire the sufficient removal rate in tungsten CMP.

Keywords

References

  1. H. D. Jeong and H. Y. Kim, 'Eco-process in semiconductor manufacturing process', J. of KSPE, Vol. 18, No. 9, p. 25, 2000
  2. 김상용, 서용진, 이우선, 이강현, 장의구, '슬러리와 패드 변화에 따른 텅스텐 플러그 CMP 공정의 최적화', 전기전자재료학회논문지, 13권, 7호, p. 568, 2000
  3. H. Y. Kim, H. J. Kim, and H. D. Jeong, 'Development of an abrasive embedded pad for dishing reduction and uniformity enhancement', J. of KPS, Vol. 37, No. 6, p. 948, 2000
  4. 나은영, 서용진, 이우선, '혼합 산화제를 사용한 텅스텐 막의 전기화학적 부식 및 CMP 특성', 전기전자재료학회논문지, 18권, 4호, p.303, 2005
  5. H. S. Lee, B. Y. Park, G. Y. Kim, H. J. Kim, H. D. Seo, and H. D. Jeong, 'Effects of friction energy on polishing results in CMP process', J. of KSME(A), Vol. 28, No. 11, p. 1807, 2004
  6. H. L. Shin and R. O. Miller, 'Chemical mechanical polishing in silicon processing', Academic Press, New York, Vol. 63, p. 186, 2000
  7. J. M. Steigerwald, 'Chemical Mechanical Penalization of Microelectric Materials', John Wiley & Sons, New York, p. 181, 1997
  8. E. Paul, 'Application of a CMP model to tungsten CMP', J. of The Electrochemical Society, Vol. 148, No. 6, p. G359, 2001
  9. Samsung Electronics Co., Ltd., 'CMP Slurry for Metal Film and its CMP Method', Korea Patent, No. 1999-0085105
  10. Samsung Electronics Co., Ltd., 'Non-selective Metal Slurry for CMP and its CMP Method', Korea Patent, No. 2001-0035669
  11. G. L. Lim, J. H. Lee, J. S. Kim, H. W. Lee, and S. H. Hyun, 'Effects of oxidants on the removal of tungsten in CMP process', Wear, Vol. 257, p. 863, 2004
  12. B. Y. Park, H. Y. Kim, H. J. Kim, G. Y. Kim, and H. D. Jeong, 'Tungsten CMP in fixed abrasive pad using hydrophilic polymer', J. of KSPE, Vol. 21, No. 7, p. 22, 2004
  13. M. R. Oliver, 'Chemical-mechanical Penalization of Semiconductor Materials', Springer, Berlin Heidelberg, p. 85, 2004
  14. N. H. Kim, J. H. Lim, S. Y. Kim, and E. G. Chang, 'Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP', Materials Letters, Vol. 57, p. 4601. 2003

Cited by

  1. Effect of Oxidizer on the Polishing in Cadmium Telluride CMP vol.32, pp.1, 2015, https://doi.org/10.7736/KSPE.2015.32.1.69