• Proceedings of the KIEE Conference
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• 2001.04a
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• pp.227-230
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• 2001

This paper deals with a bidirectional ac-dc converter used in ups system application. We propose a Voltage-Source-Charge-Pump-Power-Factor-Correction(VS-CPPFC) ac-dc converters. First of all, we propose a charge pump power-factor-correction converter. Secondly, we derive and analyse a unity power factor condition. The proposed topology is based on a half-bridge for the primary and a current-fed push pull for the secondary side of a high frequency isolation transformer. The advantage of bidirectional flow of power achieved by using the same power components is that the circuit is simple and efficient. And the galvanically isolated topology is specially attractive in battery charge/discharge circuits in ups system. We design equivalent model for the steady-state circuit and analyse operation waveforms for each mode. We show that the proposed model can be applied to ups system by simulation processes.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1011-1014
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• 2004

In this paper, we present a new DC-DC converter for gate driver circuit in low temperature poly-Si TFT technology. It is composed of a newly developed charge pump circuit and a regulator circuit. When the input voltage is 5V, the efficiency of a positive charge pump used in the DC-DC converter and that of a negative charge pump is 69.0% and 57.1%, respectively. The output voltage of DC-DC converter varies 200mV when the target voltages of DC-DC converter are 9V, -6V and the threshold voltage of TFTs varies ${\pm}$ 0.5V.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.1
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• pp.14-22
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• 1998

The Mathematic model of bit synchronization charge-pump Phase Locked Loop (PLL) is presented which takes into account the aperiodic reference pulses and the leakage current of the loop filter. We derive theoreitcal static phase error, overload and stability of bit synchronization charge-pump PLL using presented model and compare it with one of the conventional charge-pump PLL model. We can analysis bit synchronization charge-pump PLL exactly because our model takes into account the leakage current of the loop filter and aperiodic input data which are the charateristics of bit synchronization charge-pump PLL. We also verify it using HSPICE simulation with a bity synchronizer circuit.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.137-145
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• 2008

In this paper, novel CMOS charge pump having NMOS and PMOS transfer switches and a bulk-pumping circuit has been proposed. The NMOS and PMOS transfer switches allow the charge pump to improve the current-driving capability at the output. The bulk-pumping circuit effectively solves the bulk forward problem of the charge pump. To verify the effectiveness, the proposed charge pump was designed using a 80-nm CMOS process. The comparison results indicate that the proposed charge pump enhances the current-driving capability by more than 47% with pumping speed improved by 9%, as compared to conventional charge pumps having either NMOS or PMOS transfer switch. They also indicate that the charge pump reduces the worst-case forward bias of p-type bulk by more than 24%, effectively solving the forward current problem.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.394-397
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• 2002

A design study of phase detectors for the 2.5 Gb/s CDR circuit using a standard 0.18-${\mu}{\textrm}{m}$ CMOS process has been performed. The targeted CDR is based on the phase-locked loop and thus it consists of a phase detector, a charge pump, a LPF, and a VCO. For high frequency operation of 2.5 Gb/s, phase detector and charge pump, which accurately compare phase errors to reduce clock jitter, are critical for designing a reliable CDR circuit. As a phase detector, the Hogge phase detector is selected but two transistors are added to improve the performance of the D-F/F. The charge pump was also designed to be placed indirectly input and output.

• Journal of IKEEE
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• v.13 no.4
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• pp.63-68
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• 2009

The power management integrated circuit(PMIC) for CCD image sensor is presented in this study. A CCD image sensor is very sensitive against temperature. The temperature, that is heat, is generally generated by the PMIC with low efficiency. Since the generated heat influences performance of CCD image sensor, it should be minimized by using a PMIC which has a high efficiency. In order to develop the PMIC with high efficiency, the input stage is designed with synchronous type step down DC-DC converter. The operating range of the converter is from 5V to 15V and the converter is controlled using PWM method. The PWM control circuit consists of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit. The saw-tooth generator is designed with 1.2MHz oscillation frequency. The comparator is designed with the two stages OP Amp. And the error amplifier has 40dB DC gain and $77^{\circ}$ phase margin. The output of the step down converter is connected to input stage of the charge pump. The output of the charge pump is connected to input of the LDO which is the output stage of the PMIC. Finally, the PMIC, based on the PWM control circuit and the charge pump and the LDO, has output voltage of 15V, -7.5V, 3.3V and 5V. The PMIC is designed with a 0.35um process.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.473-476
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• 2004

AS supply voltage of DRAM is scaled down, voltage circuit that is stable from external noise is more important. $V_{PP}$ voltage is very important, it is biased to gate of memory cell transistor and possible to read and write without voltage down. It has both high pump gain and high power efficiency therefore charge pump circuit is proposed. The circuit is simulated by 0.18${\mu}m$ memory process and 1.2V supply voltage. Compare to CCTS, it is improved 0.43V of pump gain, $3.06\%$ of power efficiency at 6 stage.

• International journal of advanced smart convergence
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• v.4 no.1
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• pp.64-70
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• 2015

This paper proposes fluorescent electronic ballast with high power factor and low line input current harmonics. The system performance can be improved by a charged pump circuit. Details of design and circuit operation are described. The proposed electronic ballast is modified from single-stage half bridge class D electronic ballast by adding capacitor parallel with each power switch and setting the circuit parameter to operate under class DE inverter condition. By using this proposed method the DC bus voltage can be reduced around by 50% compare with conventional class D inverter circuit. Because the power switches are operated at zero voltage switching condition and low dv/dt of class DE switching. The experimental results show that the proper frequency of the prototype is around 50 kHz with input power factor of 0.982, $THD_i$ 10.2% at full load and efficiency of more than 90%.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.421-423
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• 2005

A bootstrap circuit for floating power supply has the advantage of being simple and inexpensive. However, the duty cycle and on-time are limited by the requirement to refresh the charge in the bootstrap capacitor. Hence, this paper deals with a design of charge pump circuit for a floating gate power supply of an IPM. The operation of the proposed circuit applied by three-phase inverter system for driving induction motor are verified through the experiments.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.4
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• pp.257-263
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• 2006

New charge pump circuits with low area and high power efficiency are proposed and verified in this paper. These pump circuits do not suffer the voltage stress higher than $V_{DD}$ across their pumping capacitors. Thus they can use the thin-oxide MOSFETs as the pumping capacitors. Using the thin-oxide capacitors can reduce the area of charge pumps greatly while keeping their driving capability. Comparing the new pump (NCP-2) with the conventional pump circuit using the thick-oxide capacitors shows that the power efficiency of NCP-2 is the same with the conventional one but the area efficiency of NCP-2 is improved as much as 71.8% over the conventional one, when the $V_{PP}/V_{DD}$ ratio is 3.5 and $V_{DD}$=1.8V.