• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.465-470
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• 2010

The charge pump in a phase-locked loop is a key block in determining reference spurs of the VCO output signal. To reduce reference spurs, the current mismatch in the charge pump must be minimized. This paper presents a dual compensation method to reduce the current mismatch. The proposed charge pump and PLL were realized in a $0.18{\mu}m$ CMOS process. Measured current matching characteristics were achieved with less than 1.4% difference and with the current variation of 3.8% in the pump current over the charge pump output voltage range of 0.35-1.35V at 1.8V. The reference spur of the PLL based on the proposed charge pump was measured to be -71dBc.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.469-471
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• 2008

The charge pump affects the performance of PLL. In designing the charge pump, we need to consider various issues such as current mismatch, charge sharing, feedthrough, charge injection, and leakage current. This paper propose the new charge pump circuit which is improved in terms of the current match over the existing high-speed charge pump. The simple method used for reducing current mismatch is the technique that uses a cascode in order to increase the output resistance of the charge pump. However the method limits the output voltage range of the charge pump. So the method is hard to apply as the supply voltage is lowered. Thus this paper proposes a new charge pump circuit using an op amp instead of the cascode. And the new charge pump circuit has an excellent current matching characteristics over a wide output range.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.353-359
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• 2012

A highly efficient charge pump that minimizes the reverse charge sharing current (in short, reverse current) is proposed. The charge pump employs auxiliary capacitors and diode-connected MOSFET along with an early clock to drive the charge transfer switches; this new method provides better isolation between stages. As a result, the amount of reverse current is reduced greatly and the clock driver can be designed with reduced transition slope. As a proof of the concept, a 1.1V-to-9.8 V charge pump was designed in a $0.35{\mu}m$ 18 V CMOS technology. The proposed architecture shows 1.6 V ~ 3.5 V higher output voltage compared with the previously reported architecture.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.873-879
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• 2016

A charge pump circuit with very short turn-on time is presented for minimizing reference spurs in CMOS PLL frequency synthesizers. In the source switching charge pump circuit, applying proper voltages to the source nodes of the current source FETs can significantly reduce the unwanted glitch at the output current while not degrading the rising time, thus resulting in low spur at the synthesizer output spectrum. A 1.1-1.6 GHz PLL synthesizer employing the proposed charge pump circuit is fabricated in 65 nm CMOS. The current consumption of the charge pump is $490{\mu}A$ from 1 V supply. Compared to the conventional charge pump, it is shown that the reference spur is improved by dB through minimizing the turn-on time. Theoretical analysis is described to show that the measured results agree well with the theory.

• The Transactions of the Korean Institute of Power Electronics
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• v.12 no.5
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• pp.386-393
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• 2007

Charge-pump high voltage inverter for Plasma backlight using CIM(Current Injection Method) is proposed in this paper. Adoption of ERC(Energy Recovery Circuit) is a new attempt in high voltage inverter so that it is not only energy recovery but also improvement of discharge stability and system unstability which is interrupted by noise. Using a charge-pump technique enables low voltage switches to be usable, the cost can be reduced. CIM is adopted to achieve high speed energy recovery in proposed circuit. Operations of the proposed circuit are analyzed for each mode. The proposed circuit is verified to be applicable on a 32 inch plasma backlight panel by experimental results.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.5
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• pp.37-42
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• 2012

In this paper, a new charge pump is proposed to reduce the timing mismatch in the conventional current-steering charge pumps. Conventional current-steering charge pumps used NMOS input stages both for UP and DOWN signals, which resulted in different numbers of stage for UP and DOWN delay paths. The proposed charge pump has equalized the numbers of stages for UP and DOWN signals by using a PMOS stage for the DOWN signal. The simulation results show that the conventional current-steering charge pump has 14ns and 6ns for optimized timing mismatches between UP and DOWN signals for turn-on and turn-off, respectively. On the other hand, the proposed charge pump has improved timing mismatches of 6ns and 5ns for turn-on and turn-off, respectively. As a result, the reference spurs are reduced from -26dBc to -39dBc for the proposed charge pump. The proposed charge pump was designed by using $0.18{\mu}m$ CMOS technology. The measurement results show that the maximum variation of the charging and discharging current over the charge pump output voltage range of 0.3~1.5V is approximately 1.5%.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.209-212
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• 2000

Charge pump based upon a phase locked loop(PLL) is described. This charge pump show that it is possible to overcome the issue of charge pump current mismatch by using a current subtraction circuit. Also, this charge pump can suppress reference spurs and disturbance of the VCO control voltage. HSPICE simulations are performed using 0.25$\mu\textrm{m}$ CMOS process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.2
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• pp.267-273
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• 1998

In this paper, we designed a charge pump with a differential current switching structure and it was made of a MESFET with high speed switching Property compared with CMOSFETs. The charge pump with a differential current switching structure is analyzed about operating property of circuit in high frequency band. Also we propose a method on it's characteristics estimation. The designed circuit is simulated by HSPICE simulator, and in view of the results we think that the charge pump of this study can be used in circuits of 1 GHZ frequency band grade.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.1
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• pp.14-22
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• 1998

The Mathematic model of bit synchronization charge-pump Phase Locked Loop (PLL) is presented which takes into account the aperiodic reference pulses and the leakage current of the loop filter. We derive theoreitcal static phase error, overload and stability of bit synchronization charge-pump PLL using presented model and compare it with one of the conventional charge-pump PLL model. We can analysis bit synchronization charge-pump PLL exactly because our model takes into account the leakage current of the loop filter and aperiodic input data which are the charateristics of bit synchronization charge-pump PLL. We also verify it using HSPICE simulation with a bity synchronizer circuit.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1209-1217
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• 2016

This paper presents a novel charge pump scheme that combines the advantages of Fibonacci and Dickson charge pumps to obtain 30 V voltage for display driver integrated circuit application. This design only requires four external capacitors, which is suitable for a small-package application, such as smart card displays. High-amplitude (<6.6 V) clocks are produced to enhance the gate drive of a Dickson charge pump and improve the system's current drivability by using a voltage-doubler charge pump with a pulse skip regulator. This regulation engages many middle-voltage devices, and approximately 30% of chip size is saved. Further optimization of flying capacitors tends to decrease the total chip size by 2.1%. A precise and simple model for a one-stage Fibonacci charge pump with current load is also proposed for further efficiency optimization. In a practical design, its voltage error is within 0.12% for 1 mA of current load, and it maintains a 2.83% error even for 10 mA of current load. This charge pump is fabricated through a 0.11 μm 1.5 V/6 V/32 V process, and two regulators, namely, a pulse skip one and a linear one, are operated to maintain the output of the charge pump at 30 V. The performances of the two regulators in terms of ripple, efficiency, line regulation, and load regulation are investigated.