• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.11
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• pp.76-85
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• 1997

Charge-pump loop filter was designed using GaAs MESFET for GHz-range PLL system applications. Characteristics of charge-pump loop filter and stability of charge-pump PLL, system were analyzed. Performance specifications were defined and a charge-pump loop filter was designed that satisfies these specifications.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3069-3085
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• 1996

This paper shows an accurate charge-pump PLL model which considers the wave-form distortion in high speed operation of charge-pump PLL, the leakage current in loop filter, and a physical limit in charge-pump. With proposed model of charge-pump PLL, overload and stability are derived theoretically and the results are compared to the conventional model. Unlike the ideal charge-pump PLL that simplifies calculations, it is possible to analyze the transient-state and the steady-state at the same time with proposed accurate model. Thus, charge-pump over load, in the transient-state and the stead-state of charge-pump, is accuragely analyzed and the results are confirmed with simulation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.2
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• pp.267-273
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• 1998

In this paper, we designed a charge pump with a differential current switching structure and it was made of a MESFET with high speed switching Property compared with CMOSFETs. The charge pump with a differential current switching structure is analyzed about operating property of circuit in high frequency band. Also we propose a method on it's characteristics estimation. The designed circuit is simulated by HSPICE simulator, and in view of the results we think that the charge pump of this study can be used in circuits of 1 GHZ frequency band grade.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.50-57
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• 2008

In this paper, a high-efficiency charge pump for use in CMOS image sensor(CIS) is proposed. The proposed charge pump pursues high pumping efficiency by minimizing the switching and reversion losses by taking advantage of operation characteristics of CIS. That is, the proposed charge pump minimizes the switching loss by dynamically controlling the size of clock driver, pumping capacitor, and charge transfer switch based on the operation phase of CIS pixel sensor. The charge pump also minimizes the reversion loss by guaranteeing a sufficient non-overlapping period of local clocks using a tri-state local clock driver adapting the schmitt trigger. Comparison results using a 0.13-um CMOS process technology indicate that the proposed charge pump achieves up to 49.1% reduction on power consumption under no loading current condition as compared to conventional charge pump. They also indicate that the charge pump provides 19.0% reduction on power consumption under the maximum loading current condition.

• Journal of Sensor Science and Technology
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• v.12 no.1
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• pp.51-56
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• 2003

We describe a charge pump circuit using VCO (voltage controlled oscillator) for storing information into local memories in neural networks. The VCO is used for adjusting the output voltage of the charge pump to the reference voltage and for reducing the fluctuation generated by the clocking scheme. The charge pump circuit is simulated by using Hynix 0.35um CMOS process parameters. The proposed charge pump operates properly regardless to the temperature and the supply voltage variation.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.469-471
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• 2008

The charge pump affects the performance of PLL. In designing the charge pump, we need to consider various issues such as current mismatch, charge sharing, feedthrough, charge injection, and leakage current. This paper propose the new charge pump circuit which is improved in terms of the current match over the existing high-speed charge pump. The simple method used for reducing current mismatch is the technique that uses a cascode in order to increase the output resistance of the charge pump. However the method limits the output voltage range of the charge pump. So the method is hard to apply as the supply voltage is lowered. Thus this paper proposes a new charge pump circuit using an op amp instead of the cascode. And the new charge pump circuit has an excellent current matching characteristics over a wide output range.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.465-470
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• 2010

The charge pump in a phase-locked loop is a key block in determining reference spurs of the VCO output signal. To reduce reference spurs, the current mismatch in the charge pump must be minimized. This paper presents a dual compensation method to reduce the current mismatch. The proposed charge pump and PLL were realized in a $0.18{\mu}m$ CMOS process. Measured current matching characteristics were achieved with less than 1.4% difference and with the current variation of 3.8% in the pump current over the charge pump output voltage range of 0.35-1.35V at 1.8V. The reference spur of the PLL based on the proposed charge pump was measured to be -71dBc.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.1
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• pp.14-22
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• 1998

The Mathematic model of bit synchronization charge-pump Phase Locked Loop (PLL) is presented which takes into account the aperiodic reference pulses and the leakage current of the loop filter. We derive theoreitcal static phase error, overload and stability of bit synchronization charge-pump PLL using presented model and compare it with one of the conventional charge-pump PLL model. We can analysis bit synchronization charge-pump PLL exactly because our model takes into account the leakage current of the loop filter and aperiodic input data which are the charateristics of bit synchronization charge-pump PLL. We also verify it using HSPICE simulation with a bity synchronizer circuit.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.873-879
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• 2016

A charge pump circuit with very short turn-on time is presented for minimizing reference spurs in CMOS PLL frequency synthesizers. In the source switching charge pump circuit, applying proper voltages to the source nodes of the current source FETs can significantly reduce the unwanted glitch at the output current while not degrading the rising time, thus resulting in low spur at the synthesizer output spectrum. A 1.1-1.6 GHz PLL synthesizer employing the proposed charge pump circuit is fabricated in 65 nm CMOS. The current consumption of the charge pump is $490{\mu}A$ from 1 V supply. Compared to the conventional charge pump, it is shown that the reference spur is improved by dB through minimizing the turn-on time. Theoretical analysis is described to show that the measured results agree well with the theory.

• Journal of the Korean Society for Geothermal and Hydrothermal Energy
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• v.11 no.1
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• pp.15-20
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• 2015

In this study, the optimization and performance characteristics of a cascade heat pump system was analyzed with the variation of low stage refrigerant charge amount. The cascade heat pump was designed and constructed with R134a and R410A as the refrigerant for high stage and low stage cycle, respectively. Experiments were conducted by varying the low stage charge amount and the performance characteristics of the cascade heat pump were studied. The refrigerant charge amount of the low stage cycle was varied between the ranges of -15% and +10% of the optimum charge amount. The performance variation experienced in the cascade heat pump due to the variation of refrigerant charge amount shows greater effect in the undercharge regions than the overcharge regions. COP reduction in the undercharge region is larger than the decrease in the overcharge region. Some cycle variation such as power consumption and cycle pressure according to low stage refrigerant charge amount showed different trends comparing with those according to high stage refrrgerant charge amount. Therefore, the optimum charge amount of the cascade heat pump should be determined based on the experimental data obtained by the variation of high and low stage refrigerant charge amount.