• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of Korea Water Resources Association
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• v.54 no.8
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• pp.553-566
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• 2021

River confluence is often characterized by shear layer and the associated strong mixing. In natural rivers, the main channel and its tributary can be separated by the shear layer using contrasting colors. The shear layer can be easily observed using aerial images from satellite or unmanned aerial vehicles. This study proposes a low-cost identification method extracting geographic features of the shear layer using RGB aerial image. The method consists of three stages. At first, in order to identify the shear layer, it performs image segmentation using a Gaussian mixture model and extracts the water bodies of the main channel and tributary. Next, the self-organizing map simplifies the flow line of the water bodies into the 1-dimensional curve grid. After that, the curvilinear coordinate transformation is performed using the water body pixels and the curve grid. As a result, the shear layer identification method was successfully applied to the confluence between Nakdong River and Nam River to extract geometric shear layer features (confluence angle, upstream- and downstream- channel widths, shear layer length, maximum shear layer thickness).

• Archives of Plastic Surgery
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• v.37 no.5
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• pp.535-546
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• 2010

Purpose: The subcutaneous fat tissue is separated into 2 layers by the subcutaneous fascia: the superficial and deep fat layers. The two fat layers have different structures according to the body regions. The purpose of this study is to evaluate the distribution and pattern of the two fat layers in the human body by computed tomography (CT) and histological analysis according to age, sex, anatomical region, and body mass index (BMI). Methods: This study included 200 males and 200 females who underwent 64-channel dynamic CT in our hospital. The patients were divided into 5 groups according to 10 years of their ages separately in either male or female gender. The thickness of the superficial and deep fat layers was measured in the abdominal, pelvic, and femoral regions, and we analyzed the values. Statistical analyses were performed using SPSS software. The $3{\times}3$-cm whole fat layers were harvested from the same sites of 3 cadavers for histological examination, and one cadaver was dissected for gross evaluation. Results: The total thickness of subcutaneous fat tissue was greater in females than in males, and the ratio of the superficial fat layer to the whole fat layer was higher in females. The superficial fat layer became thinner with increasing age in males. As BMI increased, the total fat layer became thicker, and the superficial fat layer became thicker than the deep fat layer. On histological examination, the superficial fat layer had small adipose lobules and showed a densely distributed pattern in the abdominal region, whereas in the femoral region, it had large adipose lobules and showed a sparsely distributed pattern. There were no significant differences in the histological findings of the deep fat layer between the 3 body regions. Conclusion: Significant differences in histological findings of the two fat layers were found in relation to age, sex, anatomical region, and BMI. The superficial fat layer became thinner with increasing age in males, but it was constant in females. As BMI increased, the total thickness of subcutaneous fat tissue became greater, and the superficial fat layer became thicker than the deep fat layer. Our measurements can be used to understand the characteristics of the fat layers in relation to age, sex, anatomical region, and BMI.

• Progress in Medical Physics
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• v.13 no.2
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• pp.85-89
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• 2002

We authors developed a new small-size birdcage RF coil for animal MR images. And we compared signal-to-noise ratio (SNR) of the new small coil with a conventional knee coil. The dimension of the low-pass type birdcage coil with 12 elements at 37 MRI system are 13 cm outer diameter, 12 cm inner diameter and 20 cm length. For each element, the width of copper tape is 0.05 mm, thickness is 8 mm and length is 20 cm. The small birdcage coil with 12 elements exhibited 7 resonance modes. The isolation of the quadrature channel could be achieved more than 20 ㏈. The coil quality factor (Q value) was 98.6. The SNR of the animal coil was 243.2 on the average and was about twice as high as the conventional knee coil. The present study successfully demonstrated that the small birdcage coil could provide high quality animal MR images with the improved SNR. Therefore, it is expected that the small birdcage coil could be used in the clinical diagnosis and research studies for veterinary medicine in the near future.

• Journal of Korea Water Resources Association
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• v.54 no.11
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• pp.943-953
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• 2021

The propagation of impact wave induced by landslide and debris flow occurred on the slope of lake, reservoir and bays is a three-dimensional natural phenomenon associated with strong interaction of debris flow and water flow in complex geometrical environments. We carried out 3D numerical modeling of such impact wave in a bay using a multiphase turbulence flow model and a rheology model for non-Newtonian debris flow. Numerical results are compared with previous experimental result to evaluate the performance of present numerical approach. The results underscore that the reasonable predictions of both thickness and speed of debris flow head penetrating below the water surface are crucial to accurately reproduce the maximum peak height and free surface profiles of impact wave. Two predictions computed using different initial debris flow thicknesses become different from the instant when the peaks of impact waves fall due to the gravity. Numerical modeling using relatively thick initial debris flow thickness appears to well reproduce the water surface profile of impact wave propagating across the bay as well as wave run-up on the opposite slope. The results show that the maximum run-up height on the opposite slope is not sensitive to the initial thickness of debris flows of same total volume. Meanwhile, appropriate rheology model for debris flow consisting of inviscid particle only should be employed to more accurately reproduce the debris flow propagating along the channel bottom.

• 한국연소학회:학술대회논문집
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• 2006.10a
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• pp.235-241
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• 2006

Catalytic combustion is one of the suitable methods for micro power source due to high energy density and no flame quenching. Catalyst loading in the micro structured combustion chamber is one of the most important issues in the development of micro catalytic combustors. In this research, to coat catalyst on the chamber wall, two methods were investigated. First, $Al_2O_3$ was selected as a support of Pt and $Pt/Al_2O_3$ was synthesized through the alumina sol-gel procedure. To improve the coating thickness and adhesion between catalyst and substrate, heat resistant and water solvable organic-inorganic hybrid binder was used. Porous silicon was also investigated as a catalyst support for platinum. Through the parametric studies of current density and etching time, fabrication process of $1{\sim}2{\mu}m$ of diameter and about $25{\mu}m$ depth pores was confirmed. Coated substrates were test in the micro channel combustor which was fabricated by the wet etching and machining of SUS 304. Using $Pt/Al_2O_3$ coated substrate and Pt coated porous silicon substrate, conversion rate of fuel was over 95% for $H_2$/Air premixed gas.

• Journal of information and communication convergence engineering
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• v.14 no.1
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• pp.40-44
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• 2016

The device coupling between the stacked top/bottom field-effect transistors (FETs) in two types of monolithic 3D inverter (M3INV) with/without a metal layer in the bottom tier is investigated, and then the regime of the thickness T_ILD and dielectric constant ε_r of the inter-layer distance (ILD), the doping concentration N_d (N_a), and length L_g of the channel, and the side-wall length L_SW where the stacked FETs are coupled are studied. When N_d (N_a) < 10¹⁶ cm^-3 and L_SW < 20 nm, the threshold voltage shift of the top FET varies almost constantly by the gate voltage of the bottom FET, but when N_d (N_a) > 10¹⁶ cm^-3 or L_SW > 20 nm, the shift decreases and increases, respectively. M3INVs with T_ILD ≥ 50 nm and ε_r ≤ 3.9 can neglect the interaction between the stacked FETs, but when T_ILD or ε_r do not meet the above conditions, the interaction must be taken into consideration.

• Korea-Australia Rheology Journal
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• v.15 no.1
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• pp.1-7
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• 2003

A new method is introduced to build up organic/organic multilayer films composed of cationic poly(allylamine hydrochloride) (PAH) and negatively charged poly (sodium 4-styrenesulfonate) (PSS) using the spinning process. The adsorption process is governed by both the viscous force induced by fast solvent elimination and the electrostatic interaction between oppositely charged species. On the other hand, the centrifugal and air shear forces applied by the spinning process significantly enhances desorption of weakly bound polyelectrolyte chains and also induce the planarization of the adsorbed polyelectrolyte layer. The film thickness per bilayer adsorbed by the conventional dipping process and the spinning process was found to be about 4 ${\AA}$ and 24 ${\AA}$, respectively. The surface of the multilayer films prepared with the spinning process is quite homogeneous and smooth. Also, a new approach to create multilayer ultrathin films with well-defined micropatterns in a short process time is Introduced. To achieve such micropatterns with high line resolution in organic multilayer films, microfluidic channels were combined with the convective self-assembly process employing both hydrogen bonding and electrostatic intermolecular interactions. The channels were initially filled with polymer solution by capillary pressure and the residual solution was then removed by the .spinning process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.671-675
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• 2010

Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.121.2-121.2
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• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.